PRODUCT DESCRIPTION (for qualification) Information provided this

The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers.

PRODUCT DESCRIPTION (for qualification) Information provided this

Datasheet Thumbnail

Top Searches for this datasheet

CY7C123 Static
PRODUCT DESCRIPTION (for qualification)
Information provided this document intended generic qualification technically describes Cypress part supplied: Marketing Part Device Description: Cypress Division: Size (stepping): CY7C123 Static Cypress Semiconductor Corporation 7C123A mils mils What markings Die:
Overall Mask) Level (pre-requisite qualification):
TECHNOLOGY/FAB PROCESS DESCRIPTION
Number Metal Layers: Passivation Type Materials: Free Phosphorus contents glass layer(%): Coating(s), used: Gate Oxide Material/Thickness (MOS): Name/Location (prime) Facility: Line ID/Wafer Process Polyimide CMOS, Double Poly, Single Metal /0.8 SiO2 Cypress Semiconductor, Round Rock, Fab2 Generic Process Technology/Design Rule (µ-drawn): Metal Composition: Metal SiAl w/Ti barrier None Teos Oxynitride
PAGE
CYPRESS SEMICONDUCTOR
PLASTIC PACKAGE/ASSEMBLY DESCRIPTION
Package Outline, Type, Name: Package edge clearance: Mold Compound Name/Manufacturer: Lead Frame material: Lead Finish, composition: Attach Area Plating: Attach Method: Wire Bond Method: Name/Location Assembly (prime) facility: Assembly Line Process Paste Thermosonic Copper Solder plated, 85%Sn, 15%Pb Silver Spot Attach Dim: Attach Material: Wire Material/Size: Cypress Bangkok, Thailand Alpha-X/P2831 mils mils Silver Epoxy Gold 24-pin, 300-mil Plastic mils side Sumitomo EME-6300H(R)
HERMETIC PACKAGE/ASSEMBLY DESCRIPTION
Package Outline, Type, Name: Package edge clearance: Mold Compound Name/Manufacturer: Lead Frame material: Lead Finish, composition: Attach Area Plating: Attach Method: Wire Bond Method: Name/Location Assembly (prime) facility: Assembly Line Process Paste Ultrasonic Alloy Solder Dipped, 63%Sn, 37%Pb None Attach Dim: Attach Material: Wire Material/Size: Cypress Bangkok, Thailand Alpha-X D283C mils mils Silver Glass Aluminum 1.25 28-pin, 300-mil CerDIP mils side
PAGE
CYPRESS SEMICONDUCTOR
OTHER INFORMATION
approval similarity, identify other devices using same basic with bonding metal mask options test selections explain:
Cypress planning changes near future, identify change (Qtr/Yr) Design Rev./Shrink: Fab/Assembly site change: Other Devices qualified this technology: Other Packages qualified this device: Voltage Rating (per STD-008, Method 3018): Flammability Classification (UL-94V): Alternate Fab/Assembly Locations: None Assembly >1,100V Process Change: Cross Licensee/Licensor:
Please attach following Qualification Reliability data revision Package type, assembly sites identified above (mark included): HAST (5.5V, 130°C, 85%RH, 15psig) Temperature Cycles (-65°C 150°C) Temperature Cycles (-40°C 165°C) Data Retention Bake, Plastic (165°C) Data Retention Bake, Hermetic (250°C) Autoclave (PCT, 121°C, 100%RH) Operating Life (temp): Steady State Life (HTSSL, 5.75V, 150°C) Temperature Humidity Bias (5.5V, 85°C, 85%RH) Latchup Testing Tests (MIL-STD 883, method 3015) Other: Current Density Input Capacitance 150°C
PAGE
CYPRESS SEMICONDUCTOR
PRODUCT INFORMATION QUALIFICATION SIMILARITY
Product Family: Division: Supplier's Part Number SRAM Cypress Semiconductor Rated Speed (all pkgs) Size/ Type (all fabs) Size (stepping) Design Rule Fabrication Passivation Mold Type Compound (all pkgs) Primary Assembly Line Location Volt Rating
Process
CY7C123 -xxPC -xxDMB -xxDMB 24.3 PDIP 24.3 CDIP 7C123A 0.8µ CMOS,
Line
Oxynitride Sumitomo Cypress Bangkok, Thailand >1,100V
NOTES: "xx" covers rated speeds, this case, 12ns, 15ns, 20ns, 25ns, 35ns
PAGE
CYPRESS SEMICONDUCTOR
DEVICE RELIABILITY SUMMARY
Marketing Part: Description:
CY7C123 24-pin, 300-mil PDIP 24-pin, 300-mil CDIP
Wafer Fab: Assembly:
Round Rock, Cypress Bangkok, Thailand
High Temperature Dynamic Operating Life (HTOL, 5.75V, 150°C) Early Failure Rate Device CY7C123-DMB CY7C123-PC 2334888 2330525 Assy 219305299 219304300 Hours 0/513 0/496 Cumulative 0/1009
High Temperature Dynamic Operating Life (HTOL, 5.75V, 150°C) Latent Failure Rate Device CY7C123-DMB CY7C123-PC Lot# 2334888 2330525 Assy 219305199 219304300 Hours 0/127 0/119 Hours 0/126 ESD) 0/119 Cumulative 0/247
Group Subgroup Life Test (HTOL, 5.75V, 150°C) Device CY7C123-DMB Lot# 2334888 Assy 219305299 Hours 0/80 Cumulative 0/80
High Temperature Steady State Life Test (HTSSL, 5.75V, 150°C) Early Failure Rate Device CY7C123-DMB CY7C123-PC 2334888 2330525 Assy 219305299 219304300 Hours 0/80 0/85 Hours 0/80 0/85 Cumulative 0/165
Temperature Cycle (Condition -65°C 150°C) Device CY7C123-DMB Lot# 2334888 Assy 219305299 Cycles 0/48 1000 Cycles 0/48 Cumulative 0/48
PAGE
CYPRESS SEMICONDUCTOR
DEVICE RELIABILITY SUMMARY Marketing Part: Description: CY7C123 24-pin, 300-mil PDIP 24-pin, 300-mil CDIP Wafer Fab: Assembly: Round Rock, Cypress Bangkok, Thailand
Autoclave (PCT, bias, 121°C, 100%RH, 15psig), precondition Temperature Cycle, condition Device CY7C182-PC Lot# 2249987 Assy Hours 0/45 Cumulative 0/45
High Accelerated Saturation Test (HAST, 5.5V, 140°C, 85%RH), precondition Temperature Cycle, Condition Device CY7C185-PC CY7C185-PC Lot# 3402940 3401905 Assy 49402048 219401134 Hours 0/45 0/45 Cumulative 0/90
Family data, SRAM, QTP# 92511
PAGE
CYPRESS SEMICONDUCTOR
Device Reliability Summary
SRAM, CY7C123 Electrostatic Discharge*** Human Body Model Circuit 883, Method 3015 +1,100V Unit -1,100V +1,100V Unit -1,100V +1,100V Unit -1,100V (Highest passing voltage, +10% Guard-banded)
plan improving implemented.
Latchup Testing Cypress Internal Latch-up Procedure Tests: lots) 0/10 Current Injection 200mA Trigger Socket Temp 125°C

PRODUCT DESCRIPTION (for qualification) Information provided this

Top Searches for this datasheet

Other recent searches