AO3420 uses advanced trench technology provide excellent RDS(ON), gate
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AO3420 N-Channel Enhancement Mode Field Effect Transistor
AO3420 uses advanced trench technology provide excellent RDS(ON), gate charge operation with gate voltages 1.8V while retaining VGS(MAX) rating. This device suitable uni-directional bi-directional load switch. Standard Product AO3420 Pb-free (meets ROHS Sony specifications). AO3420L Green Product ordering option. AO3420 AO3420L electrically identical.
(VGS 10V) RDS(ON) (VGS 10V) RDS(ON) (VGS 4.5V) RDS(ON) (VGS 2.5V) RDS(ON) (VGS 1.8V)
TO-236 (SOT-23) View
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation
Maximum
Units
TA=25°C TA=70°C TA=25°C TA=70°C TSTG
Junction Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead
Symbol Steady-State Steady-State
Units °C/W °C/W °C/W
Alpha Omega Semiconductor, Ltd.
AO3420
Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage state drain current Conditions ID=250µA, VGS=0V VDS=16V, VGS=0V TJ=55°C VDS=0V, VGS=±12V VDS=VGS ID=250uA VGS=4.5V, VDS=5V VGS=10V, ID=6A TJ=125°C RDS(ON) VGS=4.5V, ID=5A VGS=2.5V, ID=4A VGS=1.8V, ID=2A Forward Transconductance VDS=5V, ID=3.8A IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current Static Drain-Source On-Resistance 0.75 10.2 15.2 Units
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Total Gate Charge Gate Source Charge Gate Drain Charge tD(on) tD(off) Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time
VGS=0V, VDS=10V, f=1MHz VGS=0V, VDS=0V, f=1MHz
VGS=4.5V, VDS=10V, ID=6A
VGS=5V, VDS=10V, RL=1.7, RGEN=6
IF=6A, dI/dt=100A/µs Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=6A, dI/dt=100A/µs
value measured with device mounted FR-4 board with 2oz. Copper, still environment with =25°C. value given application depends user's specific board design. current rating based thermal resistance rating. Repetitive rating, pulse width limited junction temperature. thermal impedence from junction lead lead ambient. static characteristics Figures 6,12,14 obtained using pulses, duty cycle 0.5% max. These tests performed with device mounted FR-4 board with 2oz. Copper, still environment with TA=25°C. curve provides single pulse rating. Rev0 July 2005 THIS PRODUCT BEEN DESIGNED QUALIFIED CONSUMER MARKET. APPLICATIONS USES CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS AUTHORIZED. DOES ASSUME LIABILITY ARISING SUCH APPLICATIONS USES PRODUCTS. RESERVES RIGHT IMPROVE PRODUCT DESIGN, FUNCTIONS RELIABILITY WITHOUT NOTICE.
Alpha Omega Semiconductor, Ltd.
AO3420
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
ID(A) ID(A) 125°C 125°C 25°C 25°C VGS(Volts) Figure Transfer Characteristics VGS=5V VDS=5V
=1.5V
VDS(Volts) Figure On-Regions Characteristi VGS=1.8V Normalize ON-Resistance RDS(ON) VGS=2.5V VGS=4.5V VGS=10V Figure On-Resistance Drain Current Gate Voltage
VGS=2.5V ID=3.5A ID=4A VGS=4.5V ID=5A
ID=3.8A =10V ID=6A
VGS=1.8V ID=2A ID=1A
Temperature (°C) Figure On-Resistance Junction Temperature
RDS(ON)(m) 25°C
ID=3.8A
1E+01 ID=6A 1E+00 1E-01 IS(A) 1E-02 1E-03 1E-04 1E-05 VSD(Volts) Figure Body-Diode Characteristics 25°C 125°C
125°C
125°C
25°C
VGS(Volts) Figure On-Resistance Gate-Source Voltage
Alpha Omega Semiconductor, Ltd.
AO3420
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
VGS(Volts) (nC) Figure Gate-Charge Characteristics VDS=10V ID=6A VDS=15V ID=3.8A Capacitance (pF) 1400 1200 1000 VDS(Volts) Figure Capacitance Characteristics Crss Coss Coss Crss Ciss
TJ(Max)=150°C, TA=25°C TJ(Max)=150°C TA=25°C
(Amps)
Power
RDS(ON) limited
10µs 100µs
10ms 100m (Volts) Figure Maximum Forward Biased Safe Operating Area (Note
0.001
0.01
1000 Pulse Width Figure Single Pulse Power Rating Junction-toAmbient (Note
Normalized Transient Thermal Resistance
D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=90°C/W
descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Single Pulse
0.01 0.00001
0.0001
Pulse Width Figure Normalized Maximum Transient Thermal Impedance
0.001
0.01
1000
Alpha Omega Semiconductor, Ltd.
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