PRODUCT DESCRIPTION (for qualification) Information provided this

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PROM FAMILY (0.8µ) MARKETING PART CY7C245A CY7C291A CY7C293A DEVICE DESCRIPTION REGISTERED POWERDOWN
PRODUCT DESCRIPTION (for qualification)
Information provided this document intended generic qualification technically describes Cypress part supplied: Marketing Part Device Description: Cypress Division: Size (stepping): CY7C245A Registered Prom Cypress Semiconductor Corporation 7C245E 1991 mils mils What markings Die:
Overall Mask) Level (pre-requisite qualification): Cypress Qualification completion/Marketing Availability Dates (Current REV):
TECHNOLOGY/FAB PROCESS DESCRIPTION
Number Metal Layers: Passivation Type Materials: Free Phosphorus contents glass layer(%): Coating(s), used: Gate Oxide Material/Thickness (MOS): Name/Location (prime) Facility: Line ID/Wafer Process None CMOS, Double Poly, Metal 0.8µm SiO2 245A Cypress Semiconductor, Round Rock, (Fab P20A Generic Process Technology/Design Rule (µ-drawn): Metal Composition: None Metal 1%SiAl, 4,000A 15,000A Oxynitride
PLASTIC PACKAGE/ASSEMBLY DESCRIPTION
Package Outline, Type, Name: Package edge clearance: Mold Compound Name/Manufacturer: Lead Frame material: Lead Finish, composition: Attach Area Plating: Attach Method: Wire Bond Method: Assembly Line Process Name/Location Assembly (prime) facility: Epoxy Thermocompression Copper Solder Dipped, 63%Sn, 37%Pb Silver Attach Dim: Attach Material: Wire Material/Size: Cypress Semiconductor mils mils Silver Epoxy Gold 24-pin, 300-mil Plastic mils side Sumitomo EME-6300H(R)
Cypress Semiconductor, Jose,
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PLASTIC PACKAGE/ASSEMBLY DESCRIPTION
Package Outline, Type, Name: Package edge clearance: Mold Compound Name/Manufacturer: Lead Frame material: Lead Finish, composition: Attach Area Plating: Attach Method: Wire Bond Method: Assembly Line Process Name/Location Assembly (prime) facility: Epoxy Thermocompression Copper Solder Dipped, 63%Sn, 37%Pb Silver Attach Dim: Attach Material: Wire Material/Size: Cypress Semiconductor mils mils Silver Epoxy Gold 24-pin, 300-mil SOIC/SOJ mils side Sumitomo EME-6300H(R)
Cypress Semiconductor, Jose,
HERMETIC PACKAGE/ASSEMBLY DESCRIPTION
Package Outline, Type, Name: Package edge clearance: Mold Compound Name/Manufacturer: Lead Frame material: Lead Finish, composition: Attach Area Plating: Attach Method: Wire Bond Method: Name/Location Assembly (prime) facility: Assembly Line Process Paste Ultrasonic Alloy Solder Dipped, 63%Sn, 37%Pb Silver Attach Dim: Attach Material: Wire Material/Size: Cypress Semiconductor mils mils Silver Glass Aluminum 1.25 24-pin, 300-mil Windowed/Non-windowed CerDIP mils side
Cypress Semiconductor, Jose,
HERMETIC PACKAGE/ASSEMBLY DESCRIPTION
Package Outline, Type, Name: Package edge clearance: Mold Compound Name/Manufacturer: Lead Frame material: Lead Finish, composition: Attach Area Plating: Attach Method: Wire Bond Method: Name/Location Assembly (prime) facility: Assembly Line Process Paste Ultrasonic Alloy Solder Dipped, 63%Sn, 37%Pb Silver Attach Dim: Attach Material: Wire Material/Size: Cypress Semiconductor mils mils Silver Glass Aluminum 1.25 28-pin, Square Windowed/Non-windowed mils side
Cypress Semiconductor, Jose,
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OTHER INFORMATION
approval similarity, identify other devices using same basic with bonding metal mask options test selections explain: 7C245A/7C291A/7C293A Metal Mask Options Cypress planning changes near future, identify change (Qtr/Yr) Design Rev./Shrink/Date: Fab/Assembly site change/Date: Other Packages qualified this device: Voltage Rating (per STD-008, Method 3018): Flammability Classification (UL-94V): Alternate Fab/Assembly Locations: UL-94V0 Fab: Jose, Assembly PDIP Omedata, Indonesia None None Process Change/Date: Cross Licensee/Licensor/Date: None None >1,000V None None
Other Devices qualified this technology:
Please attach following Qualification Reliability data revision Package type, assembly sites identified above (mark included): HAST (5.5V, 130°C, 85%RH, 15psig) Temperature Cycle (-65°C 150°C) Data Retention Bake, Plastic (165°C) Data Retention Bake, Hermetic (250°C) Autoclave (PCT, 121°C, 100%RH) Tests (MIL-STD 883, method 3015) Operating Life (temp): Latchup Testing Steady State Life (HTSSL, 5.75V, 150°C) Temperature Humidity Bias (5.5V, 85°C, 85%RH) Other: Other: Aged Bond Strength Alpha Particle Sensitivity 150°C
CYPRESS SEMICONDUCTOR PAGE
PRODUCT INFORMATION QUALIFICATION SIMILARITY
Product Family: Division: Supplier's Part Number PROM Family, 0.8µ Cypress Semiconductor Rated Speed Size/ Type Revision Size (stepping) Design Rule Fabrication Passivation Mold Assembly Volt Type Compound Line Rating Location Availability (mm/yy)
Process Line 7C245A -xxPC -xxSC -xxDC -xxDMB -xxWC -xxWMB -xxLC -xxLMB -xxQMB 7C291A -xxPC -xxSC -xxDC -xxDMB -xxWC -xxWMB -xxLC -xxLMB -xxQMB 7C293A -xxPC -xxSC -xxDC -xxDMB -xxWC -xxWMB -xxLC -xxLMB -xxQMB 25ns 45ns 24.3 PDIP 24.3 SOIC 24.3 CDIP 24.3 CDIP 24.3 WDIP 24.3 WDIP WLCC 24.3 PDIP 24.3 SOIC 24.3 CDIP 24.3 CDIP 24.3 WDIP 24.3 WDIP WLCC 24.3 PDIP 24.3 SOIC 24.3 CDIP 24.3 CDIP 24.3 WDIP 24.3 WDIP WLCC 7C245E 0.8µ CMOS P20A Oxynitride Sumitomo Jose, >1,000V
20ns 50ns
7C291E
0.8µ
CMOS P20A
Oxynitride
Sumitomo
Jose,
>1,000V
20ns 50ns
7C293E
0.8µ
CMOS P20A
Oxynitride
Sumitomo
Jose,
>1,000V
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NOTE: "xx" replaces speed options these devices. Options 7C245A 25ns, 35ns, 45ns; military available from 35ns 45ns. Options 7C291A/293A 20ns, 25ns, 35ns, 35ns, 50ns; military available from 25ns 50ns only.
CYPRESS SEMICONDUCTOR PAGE
DEVICE RELIABILITY SUMMARY
Marketing Part: Description: CY7C245A 24-pin, 300-mil Wafer Fab: Assembly: Round Rock, Cypress Jose,
High Temperature Dynamic Operating Life (HTOL, 5.75V, 150°C) Early Failure Rate Device 7C291E Lot# 2043349 Hours 0/1998 Cumulative 0/1998
High Temperature Dynamic Operating Life (HTOL, 5.75V, 150°C) Latent Failure Rate Device 7C291E Lot# 2043349 Hours 0/346 Hours 0/346 Cumulative 0/346
High Temperature Steady State Life Test (HTSSL, 5.75V, 150°C) Device 7C291E 7C245E Lot# 2043349 2117278 Hours 0/129 0/129 Hours 0/129 0/129 Cumulative 0/258
Group High Temperature Dynamic Operating Life Test (HTSSL, 5.75V, 150°C) Device 7C291E Lot# 2043349 Hours 0/80 Data Retention Bake, Hermetic Packaged Devices bias, 250°C) Device 7C291E Lot# 2042249 Hours 0/129 Hours 0/129 Cumulative 0/129 Cumulative 0/80
Temperature Cycle (Condition -65°C 150°C) Device 7C291E Lot# 2043349 Cycles 1/76 1000 Cycles 0/75 Cumulative 1/76: Fine Leak Failure
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Pressure Cooker (121°C, 100% R.H., unbiased) Device 7C245E 7C291E 7C291E Lot# 2119321 2117278 2139124 Hours 0/76 0/76 0/76 Hours 0/76 0/76 Cumulative 0/228
HAST (130°C, R.H., 5.5V) Device 7C245E 7C291E Lot# 2119321 2117278 Hours 0/76 0/75 Cumulative 0/151
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DEVICE RELIABILITY SUMMARY
0.8µ PROM FAMILY CY7C245A/CY7C291A/CY7C293A Electrostatic Discharge Human Body Model Circuit 883, Method 3015 >+2,000V Unit >-1,000V >+2,000V Unit >-1,000V >+2,000V Unit >-1,000V (Highest passing voltage, +10% Guard-banded)

PRODUCT DESCRIPTION (for qualification) Information provided this

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