AO3414 uses advanced trench technology provide excellent RDS(ON), gate
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AO3414 N-Channel Enhancement Mode Field Effect Transistor
AO3414 uses advanced trench technology provide excellent RDS(ON), gate charge operation with gate voltages 1.8V. This device suitable load switch applications. Standard Product AO3414 Pb-free (meets ROHS Sony specifications). AO3414L Green Product ordering option. AO3414 AO3414L electrically identical.
(VGS 4.5V) RDS(ON) (VGS 4.5V) RDS(ON) (VGS 2.5V) RDS(ON) (VGS 1.8V)
TO-236 (SOT-23) View
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation
Maximum
Units
TA=25°C TA=70°C TA=25°C TA=70°C TSTG
Junction Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead
Symbol Steady-State Steady-State
Units °C/W °C/W °C/W
Alpha Omega Semiconductor, Ltd.
AO3414
Electrical Characteristics J=25°C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=16V, VGS=0V TJ=55°C VDS=0V, VGS=±8V VDS=VGS ID=250µA VGS=4.5V, VDS=5V VGS=4.5V, ID=4.2A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=2.5V, ID=3.7A VGS=1.8V, ID=3.2A Forward Transconductance VDS=5V, ID=4.2A IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current 0.76 VGS=0V, VDS=10V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=4.5V, VDS=10V, ID=4.2A VGS=5V, VDS=10V, RL=2.7, RGEN=6 IF=4A, dI/dt=100A/µs 12.7 12.3 Units
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage state drain current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Total Gate Charge Gate Source Charge tD(on) tD(off) Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=4A, dI/dt=100A/µs
value measured with device mounted 1in2 FR-4 board with 2oz. Copper, still environment with =25°C. value given application depends user's specific board design. current rating based thermal resistance rating. Repetitive rating, pulse width limited junction temperature. thermal impedence from junction lead lead ambient. static characteristics Figures 6,12,14 obtained using 80µs pulses, duty cycle 0.5% max. These tests performed with device mounted FR-4 board with 2oz. Copper, still environment with TA=25°C. curve provides single pulse rating. Rev4 June 2005
THIS PRODUCT BEEN DESIGNED QUALIFIED CONSUMER MARKET. APPLICATIONS USES CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS AUTHORIZED. DOES ASSUME LIABILITY ARISING SUCH APPLICATIONS USES PRODUCTS. RESERVES RIGHT IMPROVE PRODUCT DESIGN, FUNCTIONS RELIABILITY WITHOUT NOTICE.
Alpha Omega Semiconductor, Ltd.
AO3414
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
4.5V ID(A) 2.5V VGS=1.5V (Volts) On-Region Characteristics Normalized On-Resistance VGS=2.5 Figure On-Resistance Drain Current Gate Voltage RDS(ON) (Volts) Figure On-Resistance Gate-Source Voltage 25°C 1E-04 1E-05 (Volts) Figure Body-Diode Characteristics 125°C ID=4.2A 1E-01 1E-02 25°C 1E-03 1E+01 1E+00 125°C Temperature (°C) Figure On-Resistance Junction Temperature ID=4.2A VGS=1.8V VGS=4.5V VGS(Volts) Figure Transfer Characteristics 125°C 25°C VDS=5V
RDS(ON)
VGS=1.8V
VGS=2.5V
VGS=4.5V
Alpha Omega Semiconductor, Ltd.
AO3414
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
(Volts) (nC) Figure Gate-Charge Characteristics VDS=10V ID=4.2A
Capacitance (pF)
Ciss
Coss
Crss
(Volts) Figure Capacitance Characteristics
100.0
TJ(Max)=150°C TA=25°C RDS(ON) limited 0.1s
100µs Power 10µs
TJ(Max)=150°C TA=25°C
(Amps)
10.0
10ms
(Volts)
0.001
0.01
1000
Figure Maximum Forward Biased Safe Operating Area (Note
Pulse Width Figure Single Pulse Power Rating Junction-toAmbient (Note
Normalized Transient Thermal Resistance
D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=90°C/W
descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Single Pulse 0.01 0.00001 0.0001 0.001 0.01
1000
Pulse Width Figure Normalized Maximum Transient Thermal Impedance
Alpha Omega Semiconductor, Ltd.
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