AO3401 uses advanced trench technology provide excellent RDS(ON), gate

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AO3401 uses advanced trench technology provide excellent RDS(ON), gate

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AO3401 P-Channel Enhancement Mode Field Effect Transistor
AO3401 uses advanced trench technology provide excellent RDS(ON), gate charge operation with gate voltages 2.5V. This device suitable load switch applications. Standard product AO3401 Pb-free (meets ROHS Sony specifications). AO3401L Green Product ordering option. AO3401 AO3401L electrically identical.
-30V -4.2 (VGS -10V) RDS(ON) (VGS -10V) RDS(ON) (VGS -4.5V) RDS(ON) 120m (VGS -2.5V)
TO-236 (SOT-23) View
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current TA=25°C Power Dissipation TA=70°C Junction Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead TA=25°C TA=70°C TSTG
Maximum -4.2 -3.5
Units
Symbol
Steady-State Steady-State
Units °C/W °C/W °C/W
Alpha Omega Semiconductor, Ltd.
AO3401
Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage state drain current Conditions ID=-250µA, VGS=0V VDS=-24V, VGS=0V TJ=55°C VDS=0V, VGS=±12V VDS=VGS ID=-250µA VGS=-4.5V, VDS=-5V VGS=-10V, ID=-4.2A Static Drain-Source On-Resistance TJ=125°C VGS=-4.5V, ID=-4A -0.75 -0.7 -2.2 38.2 20.2 11.2 ±100 -1.3 Units
VGS=-2.5V, ID=-1A Forward Transconductance VDS=-5V, ID=-5A Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Total Gate Charge Gate Source Charge Gate Drain Charge tD(on) Turn-On DelayTime tD(off) Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time
VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz
VGS=-4.5V, VDS=-15V, ID=-4A
VGS=-10V, VDS=-15V, RL=3.6, RGEN=6
IF=-4A, dI/dt=100A/µs Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-4A, dI/dt=100A/µs
value measured with device mounted 1in2 FR-4 board with 2oz. Copper, still environment with =25°C. value given application depends user's specific board design. current rating based thermal resistance rating. Repetitive rating, pulse width limited junction temperature. thermal impedence from junction lead lead ambient. static characteristics Figures 6,12,14 obtained using pulses, duty cycle 0.5% max. These tests performed with device mounted FR-4 board with 2oz. Copper, still environment with TA=25°C. curve provides single pulse rating. THIS PRODUCT BEEN DESIGNED QUALIFIED CONSUMER MARKET. APPLICATIONS USES CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS AUTHORIZED. DOES ASSUME LIABILITY ARISING SUCH APPLICATIONS USES PRODUCTS. RESERVES RIGHT IMPROVE PRODUCT DESIGN, FUNCTIONS RELIABILITY WITHOUT NOTICE.
Alpha Omega Semiconductor, Ltd.
AO3401
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
25.00 -10V 20.00 15.00 10.00 5.00 0.00 0.00 -2.5V -4.5V -ID(A) 1.00 2.00 3.00 4.00 5.00 -VDS (Volts) On-Region Characteristics Normalized On-Resistance RDS(ON) 0.00 VGS=-2.5V VGS=-4.5V 2.00 4.00 6.00 8.00 10.00 Temperature (°C) Figure On-Resistance Junction Temperature 1.0E+01 1.0E+00 ID=-2A 1.0E-01 1.0E-02 1.0E-03 1.0E-04 25°C 1.0E-05 1.0E-06 -VGS (Volts) Figure On-Resistance Gate-Source Voltage -VSD (Volts) Figure Body-Diode Characteristics 25°C 125°C VGS=-2.5V ID=-1A ID=-3.5A, VGS=-4.5V ID=-3.5A, VGS=-10V -VGS(Volts) Figure Transfer Characteristics 125°C 25°C VDS=-5V
VGS=-2V
VGS=-10V
Figure On-Resistance Drain Current Gate Voltage RDS(ON) 125°C
Alpha Omega Semiconductor, Ltd.
AO3401
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
-VGS (Volts) (nC) Figure Gate-Charge Characteristics VDS=-15V ID=-4A Capacitance (pF) 1400 1200 1000 -VDS (Volts) Figure Capacitance Characteristics Coss Crss Ciss
100.0
TJ(Max)=150°C TA=25°C
10µs Power 100µs 0.1s -VDS (Volts) 0.001
TJ(Max)=150°C TA=25°C
(Amps)
RDS(ON) 10.0 limited
10ms
0.01
1000
Figure Maximum Forward Biased Safe Operating Area (Note
Pulse Width Figure Single Pulse Power Rating Junction-toAmbient (Note
Normalized Transient Thermal Resistance
D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=90°C/W
descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.01 0.00001
Single Pulse 0.0001 0.001 0.01 1000
Pulse Width Figure Normalized Maximum Transient Thermal Impedance
Alpha Omega Semiconductor, Ltd.

AO3401 uses advanced trench technology provide excellent RDS(ON), gate

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