INTRODUCTION System Considerations Over past years, various float

The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers.

INTRODUCTION System Considerations Over past years, various float

Datasheet Thumbnail

Top Searches for this datasheet

Features Performances Reprogrammable Nonvolatile Byte-wide Floating Gate Memories
INTRODUCTION System Considerations
Over past years, various floating gate devices have been increasingly used reprogrammable nonvolatile memory (NVM) applications. UV-EPROM, developed engineering prototype tool, gradually replaced program storage. UV-EPROM technology evolved into E2PROM technology, then merged create flash EEPROM technology. floating gate memory transistor allows multitude design approaches satisfy user needs. major device categories byte alterable E2PROM, flash EEPROM, UV-EPROM, OTPEPROM. This paper will compare features performances these product categories. Applications Comparisons must start with application perspective. Reprogrammable nonvolatile memories required where information changed during operation must retained after power-off. major types information data program, each type contains several classifications. Data Memory
Within each classification memory, actual application requirements vary. Intrinsically, various floating gate memories technologies have different performance characteristics limitations. These must carefully matched with application. Some most important system considerations are: many times must memory written, what required change memory, what voltages signals must system supply, much memory required, much does memory function cost? These system considerations directly compared with features performance. many times memory reprogrammed related device endurance, i.e., maximum number erase/program cycles given failure rate cumulative percent fail.) What required change memory relates ease erasing reprogramming device, i.e., level, timing, sequence waveforms. What voltages signals system must supply device operation relates tradeoffs cost performance issues circuit board. much memory required varies memory classification available device density. much memory function costs depends what categories densities memory support devices required. Device Features Performance Please refer attached tables comparison reprogrammable nonvolatile memory features performance. Byte Alterable E2PROM
Data memory includes information from external input system, e.g., application, instrument, recorder, sensor data that required historical purposes maintain continuity operation after power down power loss. Data memory typically frequently altered over lifetime application. Other applications include personalization data, e.g. last number dialed, power down information, user inputted data. Program Code Memory
Program memory classified configuration, traceablity, boot program, main program. Configuration contains look-up tables other settings control features set-up different equipment formats within system. Traceablity includes calibration maintenance settings history, well self-test vectors. boot program series instructions necessary start system. main program algorithm operating system, containing instructions operate system. Configuration traceablity memory typically small memory blocks frequently altered over lifetime application. Program memory infrequently altered.
byte alterable E2PROM standard single power supply E2PROM that erased programmed byte word level. erase contained program cycle transparent user, e.g., write load cycle similar that SRAM parallel devices, time complete longer. Byte alterable E2PROMs available very density serial density parallel devices. Serial E2PROMs standard serial protocols. Flash EEPROM
flash EEPROM electrically erasable reprogrammable nonvolatile memory whose minimum erase element larger than minimum read element. erase element page, sector, entire device, while read element byte word.
1999 Silicon Storage Technology, Inc. logo SuperFlash registered trademarks Silicon Storage Technology, Inc. These specifications subject change without notice. 703-04 3/99
Features Performances Reprogrammable Nonvolatile Byte-wide Floating Gate Memories
Technical Paper Early generations flash EEPROMs used power supplies, (VCC) erase program. step command register used enter exit various modes. Erase sector entire chip programming byte time. Later generations flash EEPROMs single power supply both read erase/program. timing level sequence control, address, signals (called Software Data Protect SDP) used enter exit various modes. erase program operations executed using separate commands. Erase sector entire chip programming byte time. latest generation flash EEPROMs single power supply page write command both erase program same operation. write command entered using same page write command used later generation byte alterable parallel E2PROMs. page write alters more bytes simultaneously; thus, significantly faster than separate sector erase byte program operations. UV-EPROM endurance capability, typically number erase/ program cycles meet AOQL guarantee, normally much greater than system update frequency requirement. Intrinsic data retention floating gate devices essentially infinite compared alternates such batteries SNOS, although extrinsic data retention varies floating gate technology. power supply voltage power dissipation relate circuit board design types other components required, e.g., volt read write device more suitable portable applications. There various approaches altering data reprogrammable nonvolatile memories. Erase accomplished single instruction that either clears entire device sectors within device. latest generation page mode devices automatically include erase prior programming; therefore, separate erase operation required. Programming variety options. Most devices, except page write devices, program byte time. program operation initiated either manipulation control signals, command register, instruction set. program operation executed either algorithmic automatic (selftimed) method. (Note: Some devices also algorithmic approach erase operation.) algorithmic method consists iterative loops execute verify commands, until operation completed (either pass verify command loop counter exceeded). automatic approach uses internal timers verify circuits execute command within specified time period. either case, after completion write operations, read should performed validate writes were successfully executed. number transistors memory cell relates directly density size, thus cost. function size also determine what package types suitable. Conclusion Selection device nonvolatile memory application complicated task. number floating gate reprogrammable nonvolatile memory device types exist, with wide variety features performance, which further complicates selection. following tables summarize status existing devices, comparing critical features performance, ease choice most appropriate device given type application.
UV-EPROM requires power supplies program light erase entire device; thus, only comes windowed hermetic package. OTP-EPROM
OTP-EPROM uses power supplies program only programmed once. Both UV-EPROMs OTP-EPROM typically programmed using external EPROM programmer, they generally written in-system. Device Parameters
Important device parameters include speed, erase/program method, power supply requirements, endurance, data retention, density, types usable packages. Speed involves both read erase/program time impact system performance. erasing programming method, e.g., automatic algorithmic, affects total time change system memory. Some devices require system interactive with device during writing, while other devices allow alternate system operations performed parallel.
1999 Silicon Storage Technology, Inc.
703-04 3/99
Features Performances Reprogrammable Nonvolatile Byte-wide Floating Gate Memories
Technical Paper TABLE MARKET APPLICATIONS FLASH EEPROMS Program/Code Storage Program Configuration Description Boot main Manufacturer's program software configuration information Typical Operating systems Frequencies Applications BIOS) Application software Channels µP/µC Microcode Printer fonts Alternatives OTP, Mask ROM, Parallel, Serial Byte UV-EPROM E2PROM
Data Storage Personalization Recorded Consumer User generated personalization data application results Phone numbers Resume points Favorite Channels Parallel, Serial Byte E2PROM Data files
Battery Back-up, Magnetic
T1.2
TABLE TYPICAL FLASH EEPROM APPLICATIONS TYPE STORAGE REQUIRED Program/Code Storage Data Storage Program Configuration Personalization Recorded CD-ROM drive Cellular phone Data bank Digital camera Hard disk drive Instrumentation Memory card Modem Networking Operating system Point-of -sales Voice recorder
T2.1
1999 Silicon Storage Technology, Inc.
703-04 3/99
Features Performances Reprogrammable Nonvolatile Byte-wide Floating Gate Memories
Technical Paper TABLE TYPICAL FLASH EEPROM APPLICATION DEVICE REQUIREMENTS Program/Code Storage Attributes Density Endurance Read Speed Optimum Sector Size Bytes Program 512K <100 cycles <120 volt Configuration 512K <1,000 cycles volt 512K <10,000 cycles volt Data Storage Personalization Recorded >100,000 cycles <150 volt
T3.1
TABLE FEATURES PERFORMANCE REPROGRAMMABLE NONVOLATILE BYTE-WIDE FLOATING GATE MEMORIES Byte Alterable E2PROM Memory Application Update Frequency Flash EEPROM UV-EPROM OTP-EPROM
Program: 1-2/year Program: Initial Parameter: Power 1/year down Parameter: Power Data: 1-10/hour down Traceablity: 2-6/year Data: 1-10/hour Traceablity: 2-6/year Pulse/Protocol Medium High Byte Page 1M/Byte 1.8V 5.0V >100 years PDIP, PLCC, SOP, TSOP, Hermetic Pulse/Command 512K Medium .025 sec/Sector ms/Page µs/Byte 100K/Page/Sector 1.8V 5.0V >100 years PDIP, PLCC, PSOP, SOP, TSOP,
Program: 1-3/decade Program: 1-3/decade
Write Method Density Range Cost Cost Device Read Speed Erase Time Program Time Endurance Power Supply Power Dissipation Data Retention #Transistors/Bit Package Types
Algorithm Medium min/Device µs/Byte 100/Device 2.7V 5.0V 12.0V >100 years Window
Algorithm µs/Byte 2.7V 5.0V 12.0V >100 years PDIP, PLCC, TSOP
T4.2
1999 Silicon Storage Technology, Inc.
703-04 3/99
Features Performances Reprogrammable Nonvolatile Byte-wide Floating Gate Memories
Technical Paper
Area Offices
Customer Service Northwest USA, Rocky Mtns. West Canada Central Southwest East East Canada North America Distribution Asia Pacific East Asia Europe Northern Europe (408) 523-7754 (408) 523-7661 (727) 771-8819 (978) 356-3845 (941) 505-8893 (408) 523-7762 (81) 45-471-1851 (44) 1932-230555 (45) 3833-5000
International Sales Representatives Distributors
Australia Belgium Memec Benelux China/Hong Kong Actron Technology Co., Ltd. (HQ) Hong Kong Actron Technology Co., Ltd. Shanghai Actron Technology Co., Ltd. Shenzhen Actron Technology Co., Ltd. Chengdu Actron Technology Co., Ltd. Beijing Actron Technology Co., Ltd. Wuhan Actron Technology Co., Ltd. Xian
MetaTech Limited (HQ) Hong Kong MetaTech Limited Beijing MetaTech Limited Shanghai MetaTech Limited Chengdu MetaTech Limited Fuzhou MetaTech Limited Shenzhen Serial System Ltd. Hong Kong Serial System Ltd. Chengdu Serial System Ltd. Shanghai Serial System Ltd. Shenzhen (61) 3-762 7644 (32) 1540-0080 (852) 2727-3978 (86) 21-6482-8021 (86) 755-376-2763 (86) 28-553-2896 (86) 10-6261-0042 (86) 27-8788-7226 (86) 29-831-4585 (852) 2421-2379 (86) 10-6858-2188 (86) 21-6485-7530 (86) 28-5577-415 (86) 591-378-1033 (86) 755-321-9726 (852) 2950-0820 (86) 28-524-0208 (86) 21-6473-2080 (86) 755-212-9076 (45) 7010-4888 (33) 0414 (33) 7900
North American Sales Representatives
Alabama M-Squared, Inc. Huntsville Arizona QuadRep, Inc. California Costar Northern Falcon Sales Technology Marcos Westar Company, Inc. Calabasas Westar Company, Inc. Irvine Colorado Lange Sales, Inc. Florida M-Squared, Inc. Clearwater M-Squared, Inc. Coral Springs M-Squared, Inc. Longwood Georgia M-Squared, Inc. Atlanta Illinois Oasis Sales Corporation Northern Rush West Associates Southern Indiana Applied Data Management Iowa Rush West Associates Kansas Rush West Associates Maryland Nexus Technology Sales Massachusetts Sales Michigan Applied Data Management Minnesota Cahill, Schmitz Cahill Missouri Rush West Associates North Carolina M-Squared, Inc. Charlotte M-Squared, Inc. Raleigh Jersey Nexus Technology Sales Mexico QuadRep, Inc. York Nexus Technology Sales Reagan/Compar Endwell Reagan/Compar Rochester Ohio Applied Data Management Cincinnati Applied Data Management Cleveland Oregon Thorson Pacific, Inc. Pennsylvania Nexus Technology Sales Texas Technical Marketing, Inc. Carrollton Technical Marketing, Inc. Houston Technical Marketing, Inc. Austin Utah Lange Sales, Inc. Washington Thorson Pacific, Inc. Wisconsin Oasis Sales Corporation Canada Electronics Sales Professionals Ottawa Electronics Sales Professionals Toronto Electronics Sales Professionals Montreal
Thorson Pacific, Inc. B.C. (205) 830-0498 (602) 839-2102 (408) 946-9339 (760) 591-0504 (818) 880-0594 (949) 453-7900 (303) 795-3600 (727) 669-2408 (954) 753-5314 (407) 682-6662 (770) 447-6124 (847) 640-1850 (314) 965-3322 (317) 257-8949 (319) 398-9679 (913) 764-2700 (301) 663-4159 (978) 851-5400 (734) 741-9292 (612) 699-0200 (314) 965-3322 (704) 522-1150 (919) 848-4300 (201) 947-0151 (505) 332-2417 (516) 843-0100 (607) 754-2171 (716) 218-4370 (513) 579-8108 (440) 946-6812 (503) 293-9001 (215) 675-9600 (972) 387-3601 (713) 783-4497 (512) 343-6976 (801) 487-0843 (425) 603-9393 (414) 782-6660 (613) 828-6881 (905) 856-8448 (514) 388-6596 (604) 294-3999
Denmark C-88 France
Bron Sevres
Germany Endrich Bauelemente Vertriebs GMBH Bramstedt
Endrich Bauelemente Vertriebs GMBH Nagold
(49) 4192-897910 (49) 7452-60070 (91) 80-526-1102 (91) 40-231130 (91) 11-220-5624 (353) 316116 (972) 3-6498404 (39) 2-424-1471 (81) 3-3350-5418 (81) 93-511-6471 (81) 6-6263-5080 (81) 3-5300-5515 (81) 6-6399-3443 (81) 3-5396-6218 (81) 3-3795-6461 (82) 2-832-8881 (60)4-658-4276 (60) 4-657-0204 (60) 3-737-1243 (31) 40-265-9399 (65) 748-4844 (65) 280-0200 (27) 845-5011 (34) 371-7768 (41) 27-721-7440/43 (886) 2-2555-0880 (886) 2-2698-0098 (886) 2-2651-0011 (44) 1296-397396
Revised 4-7-99
India Team Technology Bangalore Team Technology Hyderabad Team Technology Delhi Ireland Curragh Technology Israel Spectec Electronics Italy Carlo Gavazzi Cefra Japan Asahi Electronics Co., Ltd. Tokyo Asahi Electronics Co., Ltd. Kitakyushu
Microtek, Inc. Osaka Microtek, Inc. Tokyo Ryoden Trading Co., Ltd. Osaka Ryoden Trading Co., Ltd. Tokyo Silicon Technology Co., Ltd.
Korea Bigshine Korea Co., Ltd. Malaysia MetaTech
Serial System Serial System Kuala Lumpur
Netherlands Memec Benelux Singapore MetaTech Ltd.
Serial System Ltd. (HQ)
South Africa Distributors Spain Tekelec Espana S.A. Switzerland Leading Technologies Taiwan, R.O.C. GCH-Sun Systems Co., Ltd. (GSS) Limited Tonsam Corporation United Kingdom Ambar Components, Ltd.
Silicon Storage Technology, Inc. 1171 Sonora Court Sunnyvale, 94086 Telephone 408-735-9110 408-735-9036 www.SuperFlash.com www.ssti.com Literature FaxBack 888-221-1178, International 732-544-2873
1999 Silicon Storage Technology, Inc.
703-04 3/99

INTRODUCTION System Considerations Over past years, various float

Top Searches for this datasheet

Other recent searches