CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZEPOWER MOSFET TARGET D

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CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZEPOWER MOSFET TARGET D

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STP16NE06L STP16NE06L/FP
CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZEPOWER MOSFET
TARGET DATA TYPE P16NE06L P16NE06LFP
DS(on) 0.12 0.12
TYPICAL RDS(on) 0.09 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED 175oC OPERATING TEMPERATURE HIGH dV/dt CAPABILITY APPLICATION ORIENTED CHARACTERIZATION TO-220
DESCRIPTION This Power Mosfet latest development SGS-THOMSON unique "Single Feature Size" process whereby single body implanted strip layout structure. resulting transistor shows extremely high packing density onresistance, rugged avalance characteristics less critical alignment steps therefore remarkable manufacturing reproducibility. APPLICATIONS MOTOR CONTROL DC-DC DC-AC CONVERTERS SYNCHRONOUS RECTIFICATION ABSOLUTE MAXIMUM RATINGS
Symbol dV/dt Parameter Drain-source Voltage Drain- gate Voltage Gate-source Voltage Drain Current (continuous) Drain Current (continuous) Drain Current (pulsed) Total Dissipation Derating actor Insulation ithstand Voltage (DC) Peak Diode Recovery voltage slope Storage Temperature Max. perating Junction Temperature
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
Value P16NE06L STP16NE06LF
di/dt A/µs, V(BR)DSS, TJMAX
2000 V/ns
Pulse width limited safe operating area
October 1997
STP16NE06L/FP
THERMAL DATA
O-220 hj-ca thc- Thermal Resistance Junction-case 62.5 O-220F
Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead Temperature Soldering Purpose
AVALANCHE CHARACTERISTICS
Symb Parameter Avalanche Current, Repetitive Not-Repetitive (pulse width limited max, Single Pulse Avalanche Energy (starting Valu Unit
ELECTRICAL CHARACTERISTICS (Tcase unless otherwise specified)
Symb (BR)DSS Parameter Drain-source Breakdown Voltage Test Cond ition Min. Max.
Rating Zero Gate Voltage Drain Current Rating Gate-body Leakage Current
Symb GS(th) Parameter Gate hreshold Voltage Static Drain-source Resistance State Drain Current Test Cond ition Min. 0.090 Max. 0.12
ID(o
D(on) DS(on)
DYNAMIC
Symb Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Cond ition D(on) DS(on) Min. Max.
STP16NE06L/FP
ELECTRICAL CHARACTERISTICS (continued) SWITCHING
Symb d(on) Parameter Turn-on Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Cond ition =4.7 Min. Max.
SWITCHING
Symb r(Vof Parameter Off-voltage Rise Time Fall Cross-over Test Cond ition =4.7 Min. Max.
SOURCE DRAIN DIODE
Symb Parameter Source-drain Current Source-drain Current (pulsed) Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current di/dt A/µs Test Cond ition Min. Max.
Pulsed: Pulse duration duty cycle Pulse width limited safe operating area
STP16NE06L/FP
Fig. Unclamped Inductive Load Test Circuit Fig. Unclamped Inductive Waveform
Fig. Switching Times Test Circuits Resistive Load
Fig. Gate Charge test Circuit
Fig. Test Circuit Inductive Load Switching Diode Recovery Times
STP16NE06L/FP
TO-220 MECHANICAL DATA
DIM. MIN. DIA. 13.0 2.65 15.25 3.75 0.49 0.61 1.14 1.14 4.95 10.0 16.4 14.0 2.95 15.75 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147
TYP. MAX. 4.60 1.32 2.72 1.27 0.70 0.88 1.70 1.70 5.15 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 MIN. 0.173 0.048 0.094 4.40 1.23 2.40
inch TYP. MAX. 0.181 0.051 0.107 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 0.645 0.551 0.116 0.620 0.260 0.154 0.151
Dia.
P011C
STP16NE06L/FP
TO-220FP MECHANICAL DATA
DIM. MIN. 28.6 15.9 0.45 0.75 1.15 1.15 4.95 30.6 10.6 16.4 1.126 0.385 0.626 0.354 0.118 TYP. MAX. 2.75 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409
STP16NE06L/FP
Information furnished believed accurate reliable. However, SGS-THOMSON Microelectronics assumes responsability consequences such information infringement patents other rights third parties which results from use. license granted implication otherwise under patent patent rights SGS-THOMSON Microelectronics. Specifications mentioned this publication subject change without notice. This publication supersedes replaces information previously supplied. SGS-THOMSON Microelectronics products authorized critical components life support devices systems without express written approval SGS-THOMSON Microelectonics. 1997 SGS-THOMSON Microelectronics Printed Italy Rights Reserved SGS-THOMSON Microelectronics GROUP COMPANIES Australia Brazil Canada- China France Germany Hong Kong Italy Japan Korea Malaysia Malta Morocco Netherlands Singapore Spain Sweden Switzerland Taiwan Thailand United Kingdom U.S.A

CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZEPOWER MOSFET TARGET D

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