TYPE P19NB20 P19NB20FP DS(on) 0.180 0.180 TYPICAL RDS(on) 0.

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TYPE P19NB20 P19NB20FP DS(on) 0.180 0.180 TYPICAL RDS(on) 0.

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STP19NB20 STP19NB20FP
TYPE P19NB20 P19NB20FP
DS(on) 0.180 0.180
TYPICAL RDS(on) 0.150 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED
DESCRIPTION Using latest high voltage MESH OVERLAYprocess, STMicroelectronics designed advanced family power MOSFETs with outstanding performances. patent pending strip layout coupled with Company's proprietary edge termination structure, gives lowest RDS(on) area, exceptional avalanche dv/dt capabilities unrivalled gate charge switching characteristics. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITCH MODE POWER SUPPLIES (SMPS) DC-AC CONVERTERS WELDING EQUIPMENT UNINTERRUPTIBLE POWER SUPPLIES MOTOR DRIVE ABSOLUTE MAXIMUM RATINGS
Symbol dv/dt( June 1998 Parameter Drain-source Voltage (VGS Drain- gate Voltage ate-source Voltage Drain Current (continuous) Drain Current (continuous) Drain Current (pulsed) otal Dissipation Derating Factor Peak Diode Recovery voltage slope Insulation ithstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature
TO-220
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
Value STP19NB20 P19NB20F 2000
19A, di/dt A/µs, V(BR)DSS, TJMAX
0.28 V/ns
Pulse width limited safe operating area
STP19NB20/FP
THERMAL DATA
TO-220 -case -amb thc-sink Thermal Resistance Junction-case 62.5 O220FP 3.57
Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead Temperature Soldering Purpose
AVALANCHE CHARACTERISTICS
Symbo Parameter Avalanche Current, Repetitive Not-Repetitive (pulse width limited max) Single Pulse Avalanche Energy (starting Value Unit
ELECTRICAL CHARACTERISTICS (Tcase unless otherwise specified)
Symbo (BR)DSS IGSS Parameter Drain-source Breakdown Voltage Test ditions Min. Typ. Max. Unit
Rating Zero Gate Voltage Drain Current Rating Gate-body Leakage Current (VDS
Symbo GS(th) DS(on) Parameter Gate Threshold Voltage Static Drain-source Resistance State Drain Current Test ditions Min. Typ. 0.150 Max. 0.180 Unit
ID(o DS(on
DYNAMIC
Symbo Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test ditions ID(o DS(on =9.5 Min. 1000 1350 Typ. Max. Unit
STP19NB20/FP
ELECTRICAL CHARACTERISTICS (continued) SWITCHING
Symbo d(on) Parameter Turn-on Time Rise Time Total Charge Gate-Source Charge Gate-Drain Charge Test ditions (see test circuit, figure Min. Typ. Max. Unit
SWITCHING
Symbo (Voff) Parameter Off-voltage Rise Fall Cross-over Time Test ditions (see test circuit, figure Min. Typ. Max. Unit
SOURCE DRAIN DIODE
Symbo Parameter Source-drain Current Source-drain Current (pulsed) Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current 14.5 di/dt A/µs (see test circuit, figure Test ditions Min. Typ. Max. Unit
Pulsed: Pulse duration duty cycle Pulse width limited safe operating area
Safe Operating Area TO-220
Safe Operating Area TO-220FP
STP19NB20/FP
Thermal Impedance TO-220 Thermal Impedance forTO-220FP
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source Resistance
STP19NB20/FP
Gate Charge Gate-source Voltage Capacitance Variations
Normalized Gate Threshold Voltage Temperature
Normalized Resistance Temperature
Source-drain Diode Forward Characteristics
STP19NB20/FP
Fig. Unclamped Inductive Load Test Circuit Fig. Unclamped Inductive Waveform
Fig. Switching Times Test Circuits Resistive Load
Fig. Gate Charge test Circuit
Fig. Test Circuit Inductive Load Switching Diode Recovery Times
STP19NB20/FP
TO-220 MECHANICAL DATA
DIM. MIN. DIA. 13.0 2.65 15.25 3.75 0.49 0.61 1.14 1.14 4.95 10.0 16.4 14.0 2.95 15.75 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147
TYP. MAX. 4.60 1.32 2.72 1.27 0.70 0.88 1.70 1.70 5.15 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 MIN. 0.173 0.048 0.094 4.40 1.23 2.40
inch TYP. MAX. 0.181 0.051 0.107 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 0.645 0.551 0.116 0.620 0.260 0.154 0.151
Dia.
P011C
STP19NB20/FP
TO-220FP MECHANICAL DATA
DIM. MIN. 28.6 15.9 0.45 0.75 1.15 1.15 4.95 30.6 10.6 16.4 1.126 0.385 0.626 0.354 0.118 TYP. MAX. 2.75 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409
STP19NB20/FP
Information furnished believed accurate reliable. However, STMicroelect onics assumes responsibil consequences such information infringement patents other rights third partes which result from use. license granted implication otherwise under patent patent rights STMicroelectro nics. Specific ation mentioned this publication subjec change without notice. This publication supersedes replaces informaton previously supplied. STMicroelectronics products authorized critical components life support devices systems with express written approval STMicroelectronics. logo trademark STMicroelectronics 1999 STMicroelectronics Printed Italy Rights Reserved STMicroelectronics GROUP COMPANIES Australia Brazil Canada China France Germany Italy Japan Korea Malaysi Malta Mexico Morocco Netherlands Singapore Spain Sweden Switzerland Taiwan Thailand United Kingdom U.S.A. http://www.st.com

TYPE P19NB20 P19NB20FP DS(on) 0.180 0.180 TYPICAL RDS(on) 0.

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