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Dual Mode Cellular Band CDMA 3.5V POWER AMPLIFIER MODULE Features


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ECM011
Dual Mode Cellular Band CDMA 3.5V POWER AMPLIFIER MODULE Features
Cellular Band CDMA/AMPS Quiescent Current Control Single 3.5V Supply 3-Cell Li-Ion Battery 31.5dBm AMPS Power with Efficiency 28dBm CDMA Power with Efficiency 16dBm CDMA Power with Efficiency
Features
Power-Down Capability Temperature Compensation Circuit
Applications
3.5V CDMA/AMPS Cellular Handsets
Description
ECM011 power amplifier module 3.5V with high efficiency. This device developed using EiC's InGaP Heterojunction Bipolar Transistor (HBT) process. optimized cellular CDMA (digital) 824MHz 849MHz band. operates from positive voltage (3.2 4.2V Vcc) includes power-down feature. input output both matched housed Land Grid Array package. proprietary temperature compensated bias circuit provides nearly constant from -40°C +85°C power mode. control switches quiescent current 50mA output power range.
Electrical Specifications
Test Conditions: +3.5 VREF (reference power-down voltage) +2.9 849MHz
SYMBOL PARAMETER MIN. LIMITS TYP. MAX. UNIT TEST CONDITION
Frequency Gain (CDMA Modulation) Output Power (CDMA) Adjacent Channel Power Rejection Alternate Channel Power Rejection Power Added Efficiency (CDMA) 28.0dBm Power Added Efficiency (CDMA) 16.0dBm Output Power (AMPS) 31.5 Power Added Efficiency (AMPS) Output Load Stability Phase Angles Tolerance output VSWR Mismatch 10:1 Quiescent Current Quiescent Current Leakage Current 3.5V, Vref Vref/pd Supply Current Supply Voltage Supply Voltage Voltage (High Power Mode) Voltage (Low Power Mode) Input Return Loss Noise Figure Noise Power -135 Harmonics, Power Down On/Off Time TON/OFF <100 Switching time between output power levels Thi/Low NOTE Using Application Schematic. Tuned CDMA. NOTE 885KHz offset from band center, Pout 28dBm, High/Low mode NOTE 1980KHz offset from band center, Pout 28dBm, High/Low mode ACPR PAE1
dBm/Hz usec
NOTE NOTE NOTE High Power Mode Power Mode
Damage Power Mode High Power Mode
Corp. Subsidiary Enterprises, Ltd.
45738 Northport Loop West, Fremont, 94538 Phone: (510) 979-8999 Fax: (510) 979-8902 www.eiccorp.com
SS-000398-000 Revision
ECM011
Dual Mode Cellular Band CDMA 3.5V POWER AMPLIFIER MODULE
PACKAGE DIMENSIONS MARKINGS
ECM011 laminate base, overmold encapsulated modular package designed surface-mounted solder attachment printed circuit board.
Package Dimensions
VIEW
BOTTOM SIDE GROUND
(The exposed ground metal within this area)
SYMBOL
ENGLISH inch .004 .232 .055 .095 .116 .232 .095 .116 .055 .150
METRIC 5.89 1.40 2.41 2.95 5.89 2.41 2.95 1.40 3.81
BOTTOM SIDE .036" .030" (.91mm .76mm)
PINOUT Vcc1 RFin Vcc2 RFout
Device Marking
.232" .004" (5.89mm .1mm)
INDICATOR
.232" .004" (5.89mm .1mm)
XXXX ECM011 XXXX
FABRICATION BATCH
.055" .010" (1.4 +/-.2
VIEW
Corp. Subsidiary Enterprises, Ltd.
45738 Northport Loop West, Fremont, 94538 Phone: (510) 979-8999 Fax: (510) 979-8902 www.eiccorp.com
SS-000398-000 Revision
ECM011
Dual Mode Cellular Band CDMA 3.5V POWER AMPLIFIER MODULE
LAYOUT front side ground area under requires multiple vias provide thermal resistance backside ground.
EVAL BOARD
60-000481-000(1)
RFin
RFout
DETAIL
DETAIL
DESIGNATOR
VALUE 100pF 1.0uF ECM011
DESCRIPTION CAPACITOR, 0603 CAPACITOR, 0603 CAPACITOR, 6032 CONNECTOR WIRE CONNECTOR,
MANUFACTURER &P/N ROHM MCH185A101JK ROHM MCH182F105ZK PANASONIC ECS-HICC106R 5260CC Corp SULLINS PZC04SGAN Corp 60-000481-000(1)
NOTE NOTE NOTE NOTE
RECOMMENDED COMPONENTS SHOW. EQUIVALENT COMPONENTS USED. NOTES: UNLESS OTHERWISE SPECIFIED
Corp. Subsidiary Enterprises, Ltd.
45738 Northport Loop West, Fremont, 94538 Phone: (510) 979-8999 Fax: (510) 979-8902 www.eiccorp.com
SS-000398-000 Revision
ECM011
Dual Mode Cellular Band CDMA 3.5V POWER AMPLIFIER MODULE
SCHEMATIC
Corp. Subsidiary Enterprises, Ltd.
45738 Northport Loop West, Fremont, 94538 Phone: (510) 979-8999 Fax: (510) 979-8902 www.eiccorp.com
SS-000398-000 Revision
ECM011
Dual Mode Cellular Band CDMA 3.5V POWER AMPLIFIER MODULE
Figure
AMPS Mode Gain
824MHz, -40C 836MHz, -40C
Gain (dB)
849MHz, -40C 824MHz, 836MHz,
849MHz, 824MHz, 836MHz, 849GHz,
(dBm)
Figure
AMPS Mode
1000 824MHz, -40C 836MHz, -40C
(mA)
849MHz, -40C 824MHz, 836MHz, 849MHz, 824MHz,
836MHz, 849GHz,
(dBm)
SS-000398-000 Revision Fax: (510) 979-8902 www.eiccorp.com
Corp. Subsidiary Enterprises, Ltd.
45738 Northport Loop West, Fremont, 94538 Phone: (510) 979-8999
ECM011
Dual Mode Cellular Band CDMA 3.5V POWER AMPLIFIER MODULE Figure
CDMA Mode Gain
824MHz, -40C 836MHz, -40C 849MHz, -40C 824MHz, 836MHz, 849MHz, 824MHz, 836MHz, 849GHz, 824MHz, -40C, 836MHz, -40C, 849MHz, -40C, 824MHz, 25C, 836MHz, 25C, 849MHz, 25C, 824MHz, 85C, 836MHz, 85C, 849MHz, 85C,
Gain (dB)
(dBm)
Figure
CDMA Mode
824MHz, -40C 836MHz, -40C 849MHz, -40C 824MHz, 836MHz, 849MHz, 824MHz, 836MHz, 849MHz, 824MHz, -40C, 836MHz, -40C, 849MHz, -40C, 824MHz, 25C, 836MHz, 25C, 849MHz, 25C, 824MHz, 85C, 836MHz, 85C, 849MHz, 85C,
(mA)
(dBm)
Corp. Subsidiary Enterprises, Ltd.
45738 Northport Loop West, Fremont, 94538 Phone: (510) 979-8999 Fax: (510) 979-8902 www.eiccorp.com
SS-000398-000 Revision
ECM011
Dual Mode Cellular Band CDMA 3.5V POWER AMPLIFIER MODULE
Figure
CDMA Mode ACPR1
824M -40C 836M -40C 849M -40C 824M 836M 849M 824M 836M 849GHz,
ACPR1 (dBc)
(dBm)
Figure
CDMA Mode ACPR2
824MHz, -40C 836MHz, -40C 849MHz, -40C 824MHz, 836MHz, ACPR2 (dBc) 849MHz, 824MHz, 836MHz, 849GHz, 824MHz, -40C, 836MHz, -40C, 849MHz, -40C, 824MHz, 25C, 836MHz, 25C, 849MHz, 25C, (dBm) 824MHz, 85C, 836MHz, 85C, 849MHz, 85C,
Corp. Subsidiary Enterprises, Ltd.
45738 Northport Loop West, Fremont, 94538 Phone: (510) 979-8999 Fax: (510) 979-8902 www.eiccorp.com
SS-000398-000 Revision
ECM011
Dual Mode Cellular Band CDMA 3.5V POWER AMPLIFIER MODULE
ECM011 Operating Principles Features ECM011 6x6mm size Power Amplifier Module (PAM) cellular band CDMA (digital) AMPS (analog) handset market. utilizes InGaP technology multi layer laminate base, over molded modular package with signal pad. offers Reliability Quality EiCs proprietary InGaP provides excellent reliability used infrastructure industry. InGaP inherently superior AlGaAs HBT. surface defect density InGaP much lower than that AlGaAs. life test InGaP gone through 315oC junction temperature 50kA/cm2 over 6000 hours months), translating multi-million hours lifetime longer operation envelope [1]. This kind robust performance superior conventional AlGaAs HBT. InGaP goes through product burn-in test well. large sample group, usually pieces, goes through burn-in test ambient temperature 1000 hours. number than calculated based upon data collected. MTTF simply 1/FIT, this MTTF should agree with life test results. agreement between MTTF from life test essential: validates both tests! there large discrepancy [2], quality claim flawed. Although handset applications have stringent operating requirements infrastructure market, high reliability InGaP offers assurance user high quality product designed high volume production. InGaP Patent-pending Circuit Design Offers Temperature Variation Current gain InGaP varies about over +85oC range, compared with AlGaAs HBT. This gain variation over temperature, coupled with patent-pending circuit design approach, provides more stable electrical performance. III. ECM011 Offers High Gain Margin Transmitter Chain Design typical gain ECM011 29dB. This high gain allows driver amplifier very linear which results reduced current. Taking into account loss front PAM, driver needs deliver only 4dBm linear power. P1dB driver amplifier should more than 10dBm.
Corp. Subsidiary Enterprises, Ltd.
45738 Northport Loop West, Fremont, 94538 Phone: (510) 979-8999 Fax: (510) 979-8902 www.eiccorp.com
SS-000398-000 Revision
ECM011
Dual Mode Cellular Band CDMA 3.5V POWER AMPLIFIER MODULE
lower gain used, driver needs provide more power, expense more operation current possible degradation ACPR. Therefore ECM011 replace lower gain PAM, this allows driver work lower output power provide better ACPR, this improved performance offers more design margin transmitter chain. Easy Shut Down Leakage Current connected directly battery, therefore shut down required. voltage applied Vref pin, which then brings quiescent current. control switches quiescent current 50mA output power range. power range below 16dBm; high power range from 16dBm full power. Removing voltage applied Vref pin, quiescent current will drop small leakage current, typically <10uA. leakage current allows longer standby time phone. General Application requires minimal number external components. Both input output dc-blocked within shown function diagram. input connected ground through shunt inductor within PAM. ECM011 designed with quiescent current 50mA typical power mode. full CDMA power 28dBm, operation current will greater than 500mA. Therefore "quasi class "deep class amplifier. operation current increases with output power. CDMA signal time varying amplitude. peak power above average power more accurately defined PDF, power density function). peak power clipped amplifier saturation power level, distortion signal will cause ACPR deteriorate rapidly. Therefore P1dB tested SINE wave) amplifier should over 31dBm provide good ACPR output power. 100pF capacitor required adjacent Vcc2 pin. addition, large capacitor (>uF) required. CDMA signal time-varying amplitude; therefore draws operation current corresponding instantaneous demand power. large capacitor near-by electric charge reservoir, providing current demand. long electrical path from battery behaves large inductor; instantaneous demand current will cause voltage drop, resulting poor ACPR. evaluation board, large shunt capacitor added protect Vref from power supply over-voltage during ON/OFF. This similar different from ESD. Therefore rise fall time test power down feature needs tested with shunt capacitor Vref removed.
Corp. Subsidiary Enterprises, Ltd.
45738 Northport Loop West, Fremont, 94538 Phone: (510) 979-8999 Fax: (510) 979-8902 www.eiccorp.com
SS-000398-000 Revision
ECM011
Dual Mode Cellular Band CDMA 3.5V POWER AMPLIFIER MODULE
Conclusion ECM011 offers high gain, quiescent current, small footprint. InGaP technology provides excellent reliability quality, assuring phone manufacturer high quality product designed high volume production. Reference "InGaP HBTs offer Enhanced Reliability", Barry Lin, Applied Microwave Wireless. 115-116, Dec. 2000 Interaction Degradation Mechanisms Be-Doped GaAs HBTs", Darrell Hill John Parsey, Digest GaAs Symposium, Oct., 2000. 241-244
APPLICATION NOTES
Please visit website www.eiccorp.com view download following documents. also call Customer Service request hardcopy. Document AP-000513-000 AP-000516-000 Description Tape Reel Specifications: PAMS Application Note Index
Corp. Subsidiary Enterprises, Ltd.
45738 Northport Loop West, Fremont, 94538 Phone: (510) 979-8999 Fax: (510) 979-8902 www.eiccorp.com
SS-000398-000 Revision

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