Korean CDMA 3.5V POWER AMPLIFIER MODULE ECM008 Korean Band Person
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ECM008
Korean CDMA 3.5V POWER AMPLIFIER MODULE
ECM008 Korean Band Personal Communications Service (PCS) power amplifier housed 6-pin, Land Grid Array, surface mounted module. input output both matched operates 3.5V with high efficiency within 1720 1780 band. This device developed using EiC's InGaP Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process optimized CDMA (digital) providing excellent power added efficiency 28dBm output.
Features
Operates from single 3.5V Supply 3-Cell Li-Ion Battery Power-down activated when Vref Very leakage current <10uA 28.0 CDMA Power CDMA Efficiency
Applications
Korean CDMA Handsets
Power-down Capability Typical Quiescent Current High Reliability InGaP design
Functional Block Diagram
CAUTION!
SENSITIVE ELECTRONIC DEVICE
SS-000372-000 Revision Fax: (510) 979-8902 www.eiccorp.com
Corp. Subsidiary Enterprises, Ltd.
45738 Northport Loop West, Fremont, 94538 Phone: (510) 979-8999
ECM008
Korean CDMA 3.5V POWER AMPLIFIER MODULE
ELECTRICAL SPECIFICATIONS
following tables list electrical characteristics ECM008 Power Amplifier Module. Table lists electrical performance ECM008 nominal operating conditions Korean band. Table lists absolute maximum ratings continuous operation.
Table Electrical Specifications
Test Conditions: 25oC, +3.5V, VREF (reference power-down voltage) +2.9V, 1720 1780
SYMBOL ACPR ILeak PARAMETER CONDITION LIMITS MIN. 1720 UNIT TYP. -140 <100 MAX. 1780 VSWR dBm/Hz TEST CONDITION
Frequency Gain (CDMA Modulation) Output Power (CDMA) Adjacent Channel Power Rejection Power Added Efficiency (CDMA) Output Stability Quiscent Current Applied Leakage Current Applied Supply Voltage Input Return Loss Harmonics Noise Noise Power Band Noise Figure TON/OFF Power Down On/Off Time NOTE Using Application Schematic. Tuned CDMA. NOTE 1250 offset from band center. NOTE oscillation phases NOTE 3.5V, VREF/PD
NOTE NOTE NOTE NOTE
Table Absolute Maximum Ratings
Exceeding absolute maximum ratings cause permanent damage device. damage assuming only paeameter limit time with other parameters below nominal value.
PARAMETER Supply Voltage Reference Power-down Voltage(Vcc=VREF Power Input Ambient Operating Temperature Storage Temperature RATING +110 +140 UNIT Volts Volts TEST CONDITION VREF 2.9V 3.5V VREF
2.9V
Corp. Subsidiary Enterprises, Ltd.
45738 Northport Loop West, Fremont, 94538 Phone: (510) 979-8999 Fax: (510) 979-8902 www.eiccorp.com
SS-000372-000 Revision
ECM008
Korean CDMA 3.5V POWER AMPLIFIER MODULE
PACKAGE DIMENSIONS MARKINGS
ECM008 multi-layer laminate base, overmold encapsulated modular package designed surface-mounted solder attachment printed circuit board.
Package Dimensions
VIEW
Device Marking
Corp. Subsidiary Enterprises, Ltd.
45738 Northport Loop West, Fremont, 94538 Phone: (510) 979-8999 Fax: (510) 979-8902 www.eiccorp.com
SS-000372-000 Revision
ECM008
Korean CDMA 3.5V POWER AMPLIFIER MODULE
Figure
Pout Gain Using CDMA Signal tested eval board) Gain(dB) Pout(dBm)
Figure
1720MHz@-40°C 1720MHz@25°C 1720MHz@85°C 1750MHz@-40°C 1750MHz@25°C 1750MHz@85°C 1780MHz@-40°C 1780MHz@25°C 1780MHz@85°C
Pout Using CDMA Signal tested eval board) PAE(%) Pout(dBm) 1720MHz@-40°C 1720MHz@25°C 1720MHz@85°C 1750MHz@-40°C 1750MHz@25°C 1750MHz@85°C 1780MHz@-40°C 1780MHz@25°C 1780MHz@85°C
Corp. Subsidiary Enterprises, Ltd.
45738 Northport Loop West, Fremont, 94538 Phone: (510) 979-8999 Fax: (510) 979-8902 www.eiccorp.com
SS-000372-000 Revision
ECM008
Korean CDMA 3.5V POWER AMPLIFIER MODULE
Figure
Pout v.s. ACPR1 Using CDMA Signal tested eval board) -100 -110 -120 Pout(dBm)
Figure
1720MHz@-40°C 1720MHz@25°C 1720MHz@85°C 1750MHz@-40°C 1750MHz@25°C 1750MHz@85°C 1780MHz@-40°C 1780MHz@25°C 1780MHz@85°C
ACPR1(dBc)
GCDMA Temperature Frequency Pout=28dBm tested eval board) 28.5 27.5 26.5 25.5 24.5 23.5 1720MHz 1750MHz 1780MHz
SS-000372-000 Revision Fax: (510) 979-8902 www.eiccorp.com
GCDMA @-40°C GCDMA @25°C GCDMA @85°C
Corp. Subsidiary Enterprises, Ltd.
45738 Northport Loop West, Fremont, 94538 Phone: (510) 979-8999
ECM008
Korean CDMA 3.5V POWER AMPLIFIER MODULE
Figure
1720MH
1750MH
1780MH
Figure
ACPR1 Vref=2.9v 1750MHz Pout=28dBm 25°C devices Eval boards) Corp. Subsidiary Enterprises, Ltd.
45738 Northport Loop West, Fremont, 94538 Phone: (510) 979-8999 Fax: (510) 979-8902 www.eiccorp.com SS-000372-000 Revision
ECM008
Korean CDMA 3.5V POWER AMPLIFIER MODULE
Figure
Vref (Average devices) 160.00 140.00 120.00 Icq(mA) 100.00 80.00 60.00 40.00 20.00 0.00 3.20 3.40 3.60 3.80 4.00 4.20 Vref=2.9V Vref=3.0V Vref=3.1V
Figure
Gcdma Vref=2.9v 1750MHz Pout=28dBm 25°C Devices Eval boards) 27.5 26.5 25.5 24.5 Corp. Subsidiary Enterprises, Ltd.
45738 Northport Loop West, Fremont, 94538 Phone: (510) 979-8999 Fax: (510) 979-8902 www.eiccorp.com SS-000372-000 Revision
ECM008
Korean CDMA 3.5V POWER AMPLIFIER MODULE LAYOUT front side ground area under requires multiple vias provide thermal resistance backside ground. EVAL BOARD
SCHEMATIC
Corp. Subsidiary Enterprises, Ltd.
45738 Northport Loop West, Fremont, 94538 Phone: (510) 979-8999 Fax: (510) 979-8902 www.eiccorp.com
SS-000372-000 Revision
ECM008
Korean CDMA 3.5V POWER AMPLIFIER MODULE
Notes:
FUNCTION Vcc1 Vref Vcc2
DESCRIPTION connects driver stage collector. input port connects internally matched circuit. Ref. Voltage bias circuit. significant amplifier current drawn until Vref reaches approximately 2.5V. Vcc2 connects power amplifier stage collector. internally matched ohms expects load impedance. Ground Ground. This ground also serves heat sink must connect well ground heat sink. supply pins connected together supply.
Corp. Subsidiary Enterprises, Ltd.
45738 Northport Loop West, Fremont, 94538 Phone: (510) 979-8999 Fax: (510) 979-8902 www.eiccorp.com
SS-000372-000 Revision
ECM008
Korean CDMA 3.5V POWER AMPLIFIER MODULE ECM008 Operating Principles Features ECM008 6x6mm size Power Amplifier Module (PAM) Korean band CDMA handset market. utilizes InGaP technology multi layer laminate base, over molded modular package with signal pad. offers Reliability Quality EiCs proprietary InGaP provides excellent reliability used infrastructure industry. InGaP inherently superior AlGaAs HBT. surface defect density InGaP much lower than that AlGaAs. life test InGaP gone through 315oC junction temperature 50kA/cm2 over 6000 hours months), translating multimillion hours lifetime longer operation envelope [1]. This kind robust performance superior conventional AlGaAs HBT. InGaP goes through product burn-in test well. large sample group, usually pieces, goes through burn-in test ambient temperature 1000 hours. number than calculated based upon data collected. MTTF simply 1/FIT, this MTTF should agree with life test results. agreement between MTTF from life test essential: validates both tests! there large discrepancy [2], quality claim flawed. Although handset applications have stringent operating requirements infrastructure market, high reliability InGaP offers assurance user high quality product designed high volume production. InGaP Patent-pending Circuit Design Offers Temperature Variation Current gain InGaP varies about over +85oC range, compared with AlGaAs HBT. This gain variation over temperature, coupled with patent-pending circuit design approach, provides more stable electrical performance. III. ECM008 Offers High Gain Margin Transmitter Chain Design typical gain ECM008 27dB. This high gain allows driver amplifier very linear which results reduced current. Taking into account loss front PAM, driver needs deliver only 4dBm linear power. P1dB driver amplifier should more than 10dBm. Corp. Subsidiary Enterprises, Ltd.
45738 Northport Loop West, Fremont, 94538 Phone: (510) 979-8999 Fax: (510) 979-8902 www.eiccorp.com SS-000372-000 Revision
ECM008
Korean CDMA 3.5V POWER AMPLIFIER MODULE
lower gain used, driver needs provide more power, expense more operation current possible degradation ACPR. Therefore ECM008 replace lower gain PAM, this allows driver work lower output power provide better ACPR, this improved performance offers more design margin transmitter chain. Easy Shut Down Leakage Current connected directly battery, therefore shut down required. voltage applied Vref pin, which then brings quiescent current. Removing voltage applied Vref pin, quiescent current will drop small leakage current, typically <10uA. leakage current allows longer standby time phone. General Application requires minimal number external components. Both input output dc-blocked within shown function diagram. input connected ground through shunt inductor within PAM. ECM008 designed with quiescent current 80mA typical. full CDMA power 28dBm, operation current will greater than 500mA. Therefore "quasi class "deep class amplifier. operation current increases with output power. CDMA signal time varying amplitude. peak power above average power more accurately defined PDF, power density function). peak power clipped amplifier saturation power level, distortion signal will cause ACPR deteriorate rapidly. Therefore P1dB tested SINE wave) amplifier should over 31dBm provide good ACPR output power. 100pF capacitor required adjacent Vcc2 pin. addition, large capacitor (>uF) required. CDMA signal time-varying amplitude; therefore draws operation current corresponding instantaneous demand power. large capacitor near-by electric charge reservoir, providing current demand. long electrical path from battery behaves large inductor; instantaneous demand current will cause voltage drop, resulting poor ACPR.
Corp. Subsidiary Enterprises, Ltd.
45738 Northport Loop West, Fremont, 94538 Phone: (510) 979-8999 Fax: (510) 979-8902 www.eiccorp.com
SS-000372-000 Revision
ECM008
Korean CDMA 3.5V POWER AMPLIFIER MODULE
evaluation board, large shunt capacitor added protect Vref from power supply over-voltage during ON/OFF. This similar different from ESD. Therefore rise fall time test power down feature needs tested with shunt capacitor Vref removed. Conclusion ECM008 offers high gain, quiescent current, small footprint. InGaP technology provides excellent reliability quality, assuring phone manufacturer high quality product designed high volume production. "InGaP HBTs offer Enhanced Reliability", Barry Lin, Applied Microwave Wireless. 115-116, Dec. 2000 Interaction Degradation Mechanisms Be-Doped GaAs HBTs", Darrell Hill John Parsey, Digest GaAs Symposium, Oct., 2000. 241-244
APPLICATION NOTES
Please visit website www.eiccorp.com view download following documents. also call Customer Service request hardcopy. Document AP-000513-000 AP-000516-000 Description Tape Reel Specifications: PAMS Application Note Index
Corp. Subsidiary Enterprises, Ltd.
45738 Northport Loop West, Fremont, 94538 Phone: (510) 979-8999 Fax: (510) 979-8902 www.eiccorp.com
SS-000372-000 Revision
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