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SO-8 P-Channel enhancement mode power field effect transistors produce
Top Searches for this datasheetNDS8435 Single P-Channel Enhancement Mode Field Effect Transistor SO-8 P-Channel enhancement mode power field effect transistors produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process especially tailored minimize on-state resistance provide superior switching performance. These devices particularly suited voltage applications such notebook computer power management other battery powered circuits where fast switching, in-line power loss, resistance transients needed. Features -7A, -30V. RDS(ON) 0.028 -10V RDS(ON) 0.045 -4.5V. High density cell design extremely RDS(ON). High power current handling capability widely used surface mount package. Absolute Maximum Ratings Symbol VDSS VGSS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed 25°C unless otherwise noted NDS8435 (Note Units Maximum Power Dissipation (Note (Note (Note TJ,TSTG Operating Storage Temperature Range THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note (Note °C/W °C/W 1997 Fairchild Semiconductor Corporation NDS8435 Rev. Electrical Characteristics 25°C unless otherwise noted) Symbol Parameter Conditions Units CHARACTERISTICS BVDSS IDSS IGSSF IGSSR VGS(th) RDS(ON) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current -250 55°C Gate Body Leakage, Forward Gate Body Leakage, Reverse Gate Threshold Voltage Static Drain-Source On-Resistance VDS= VGS, -250 125°C -7.0 125°C -4.5 -5.8 ID(on) Ciss Coss Crss tD(on) tD(off) On-State Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn Delay Time Turn Rise Time Turn Delay Time Turn Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge -7.0 VGEN RGEN -4.5, -7.0 DYNAMIC CHARACTERISTICS 1500 -0.7 -1.5 -1.1 0.023 0.038 0.037 -100 -2.2 0.028 0.06 0.045 CHARACTERISTICS (Note SWITCHING CHARACTERISTICS (Note NDS8435 Rev. Electrical Characteristics 25°C unless otherwise noted) Symbol Notes: junction-to-case case-to-ambient thermal resistance where case thermal reference defined solder mounting surface drain pins. guaranteed design while determined user's board design. Parameter Conditions -2.1 Units DRAIN-SOURCE DIODE CHARACTERISTICS MAXIMUM RATINGS Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage -2.1 (Note -0.8 -1.2 J-TA J-TA RDS(ON Typical using board layouts shown below 4.5"x5" FR-4 still environment: 50oC/W when mounted copper. 105oC/W when mounted 0.04 copper. 125oC/W when mounted 0.006 copper. Scale letter size paper Pulse Test: Pulse Width 300µs, Duty Cycle 2.0%. NDS8435 Rev. Typical Electrical Characteristics -10V DRAIN-SOURCE CURRENT -6.0 -5.0-4.5 DRAIN-SOURCE ON-RESISTANCE -4.0 -3.0V -3.5 DS(on), NORMALIZED -3.5 -4.0 -4.5 -5.0 -6.0 -3.0 -2.5 -0.5 -1.5 DRAIN-SOURCE VOLTAGE -2.5 DRAIN CURRENT Figure On-Region Characteristics. Figure On-Resistance Variation with Drain Current Gate Voltage. DRAIN-SOURCE ON-RESISTANCE DS(ON), NORMALIZED -10V DS(on) NORMALIZED DRAIN-SOURCE ON-RESISTANCE =-7.0A -10V 125°C 25°C -55°C JUNCTION TEMPERATURE (°C) DRAIN CURRENT Figure On-Resistance Variation with Temperature. Figure On-Resistance Variation with Drain Current Temperature. 125°C GATE-SOURCE THRESHOLD VOLTAGE -10V -55°C -250µA DRAIN CURRENT NORMALIZED 25°C GATE SOURCE VOLTAGE JUNCTION TEMPERATURE (°C) Figure Transfer Characteristics. Figure Gate Threshold Variation with Temperature. NDS8435 Rev. Typical Electrical Characteristics (continued) DRAIN-SOURCE BREAKDOWN VOLTAGE REVERSE DRAIN CURRENT 1.08 1.06 1.04 1.02 0.98 0.96 0.94 -250µA DSS, NORMALIZED 125°C 25°C -55°C 0.01 0.001 JUNCTION TEMPERATURE (°C) -VSD BODY DIODE FORWARD VOLTAGE Figure Breakdown Voltage Variation with Temperature. Figure Body Diode Forward Voltage Variation with Source Current Temperature. 4000 -7.0A GATE-SOURCE VOLTAGE 2000 CAPACITANCE (pF) -5.0V -15V -10V 1000 DRAIN SOURCE VOLTAGE GATE CHARGE (nC) Figure Capacitance Characteristics. Figure Gate Charge Characteristics. -VDD d(on) d(off) VOUT PULSE IDTH INVERTED Figure Switching Test Circuit. Figure Switching Waveforms. NDS8435 Rev. Typical Electrical Thermal Characteristics (continued) STEADY-STATE POWER DISSIPATION -10V TRANSCONDUCTANCE (SIEMENS) -55°C 25°C 125°C 4.5"x5" FR-4 Board Still DRAIN CURRENT COPPER MOUNTING AREA Figure Transconductance Variation with Drain Current Temperature. Figure SO-8 Maximum Steady-State Power Dissipation versus Copper Mounting Area. STEADY-STATE DRAIN CURRENT DRAIN CURRENT -10V 4.5"x5" FR-4 Board Still 0.03 SINGLE PULSE Note 25°C DRAIN-SOURCE VOLTAGE COPPER MOUNTING AREA 0.01 Figure Maximum Steady-State Drain Current versus Copper Mounting Area. TRANSIENT THERMAL RESISTANCE r(t), NORMALIZED EFFECTIVE 0.05 0.02 0.01 Single Pulse Figure Maximum Safe Operating Area. .0001 r(t) Note P(pk) Duty Cycle, .001 TIME (sec) Figure Transient Thermal Response Curve. Note: Thermal characterization performed using conditions described note Transient thermal response will change depending circuit board design. NDS8435 Rev. SO-8 Tape Reel Data Package Dimensions SOIC(8lds) Packaging Configuration: Figure Packaging Description: ROST DEVICES ROST ADIO NUMB PEEL STREN _gms Antistatic Cover Tape Label SOIC-8 parts shipped tape. carrier tape made from dissipative (carbon filled) polycarbonate resin. cover tape multilayer film (Heat Activated Adhesive nature) primarily composed polyester film, adhesive layer, sealant, anti-static sprayed agent. These reeled parts standard option shipped with 2,500 units 330cm diameter reel. reels dark blue color made polystyrene plastic (antistatic coated). Other option comes units 177cm diameter reel. This some other options further described Packaging Information table. These full reels individually barcode labeled placed inside standard intermediate (illustrated figure 1.0) made recyclable corrugated brown paper. contains reels maximum. these boxes placed inside barcode labeled shipping which comes different sizes depending number parts shipped. Static Dissipative Embossed Carrier Tape F63TNR Label Customized Label F852 9959 F852 9959 F852 9959 F852 9959 SOIC (8lds) Packaging Information Packaging Option Packaging type Reel/Tube/Bag Reel Size Dimension (mm) Weight unit (gm) Weight Reel (kg) Note/Comments Standard flow code) 2,500 343x64x343 5,000 0.0774 0.6060 L86Z Rail/Tube 530x130x83 30,000 0.0774 F011 4,000 343x64x343 8,000 0.0774 0.9696 D84Z 184x187x47 1,000 0.0774 0.1182 F852 9959 SOIC-8 Unit Orientation 343mm 342mm 64mm Standard Intermediate Label F63TNR Label sample LOT: CBVK741B019 FSID: FDS9953A QTY: 2500 SPEC: F63TNLabel F63TN Label Label (F63TNR)3 D/C1: D9842 D/C2: QTY1: QTY2: SPEC REV: CPN: N/F: SOIC(8lds) Tape Leader Trailer Configuration: Figure Carrier Tape Cover Tape Components Trailer Tape 640mm minimum empty pockets Leader Tape 1680mm minimum empty pockets July 1999, Rev. SO-8 Tape Reel Data Package Dimensions, continued SOIC(8lds) Embossed Carrier Tape Configuration: Figure User Direction Feed Dimensions millimeter type SOIC(8lds) (12mm) 6.50 +/-0.10 5.30 +/-0.10 12.0 +/-0.3 1.55 +/-0.05 1.60 +/-0.10 1.75 +/-0.10 10.25 5.50 +/-0.05 +/-0.1 +/-0.1 +/-0.10 0.450 +/0.150 +/-0.3 0.06 +/-0.02 Notes: dimensions determined with respect EIA/Jedec RS-481 rotational lateral movement requirements (see sketches maximum Typical component cavity center line 0.5mm maximum maximum component rotation 0.5mm maximum Sketch (Side Front Sectional View) Component Rotation Sketch (Top View) Typical component center line Sketch (Top View) Component lateral movement SOIC(8lds) Reel Configuration: Figure Component Rotation Measured detail Diameter Option detail Diameter Option Measured DETAIL Dimensions inches millimeters Tape Size 12mm Reel Option 7.00 177.8 13.00 0.059 0.059 +0.020/-0.008 +0.5/-0.2 +0.020/-0.008 +0.5/-0.2 0.795 20.2 0.795 20.2 2.165 7.00 0.488 +0.078/-0.000 12.4 +2/0 0.488 +0.078/-0.000 12.4 +2/0 0.724 18.4 0.724 18.4 (LSL-USL) 0.469 0.606 11.9 15.4 0.469 0.606 11.9 15.4 12mm 1998 Fairchild Semiconductor Corporation July 1999, Rev. SO-8 Tape Reel Data Package Dimensions, continued SOIC-8 Code Scale letter size paper Dimensions shown below inches [millimeters] Part Weight unit (gram): 0.0774 September 1998, Rev. TRADEMARKS following registered unregistered trademarks Fairchild Semiconductor owns authorized intended exhaustive list such trademarks. Quiet SeriesFAST® FASTrGTOHiSeCDISCLAIMER SeriesSuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 TinyLogicUHCVCX FAIRCHILD SEMICONDUCTOR RESERVES RIGHT MAKE CHANGES WITHOUT FURTHER NOTICE PRODUCTS HEREIN IMPROVE RELIABILITY, FUNCTION DESIGN. FAIRCHILD DOES ASSUME LIABILITY ARISING APPLICATION PRODUCT CIRCUIT DESCRIBED HEREIN; NEITHER DOES CONVEY LICENSE UNDER PATENT RIGHTS, RIGHTS OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS AUTHORIZED CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS WITHOUT EXPRESS WRITTEN APPROVAL FAIRCHILD SEMICONDUCTOR CORPORATION. used herein: Life support devices systems devices critical component component life support device system whose failure perform systems which, intended surgical implant into reasonably expected cause failure life body, support sustain life, whose support device system, affect safety failure perform when properly used accordance with instructions provided labeling, effectiveness. reasonably expected result significant injury user. PRODUCT STATUS DEFINITIONS Definition Terms Datasheet Identification Advance Information Product Status Formative Design Definition This datasheet contains design specifications product development. Specifications change manner without notice. This datasheet contains preliminary data, supplementary data will published later date. Fairchild Semiconductor reserves right make changes time without notice order improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves right make changes time without notice order improve design. Preliminary First Production Identification Needed Full Production Obsolete Production This datasheet contains specifications product that been discontinued Fairchild semiconductor. datasheet printed reference information only. 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