MECHANICAL DATA Dimensions (inches) 8.64 (0.34) 9.40 (0.37) 8.01
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2N6782
MECHANICAL DATA Dimensions (inches)
8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355)
N-CHANNEL POWER MOSFET ENHANCEMENT MODE
4.06 (0.16) 4.57 (0.18)
12.70 (0.500) min.
0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia.
APPLICATIONS
FAST SWITCHING
5.08 (0.200) typ.
MOTOR CONTROLS POWER SUPPLIES
0.74 (0.029) 1.14 (0.045)
0.71 (0.028) 0.53 (0.021)
2.54 (0.100)
TO39 Package (TO-205AF)
Source Underside View Gate Drain Case
ABSOLUTE MAXIMUM RATINGS (Tcase 25°C unless otherwise stated)
VDGR @Tcase 25°C @Tcase 100°C Tcase 25°C Tcase 100°C Junction Case Junction ambient TJ,Tstg Lead Temperature Drain Source Voltage Drain Gate Voltage (RGS Continuous Drain Current Continuous Drain Current Pulsed Drain Current Gate Source Voltage Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Linear Derating Factor Operating Storage Temperature Range
from case secs)
100V 100V 3.5A 2.25A ±20V 0.12W/°C 0.005W/°C +150°C 300°C
Semelab reserves right change test conditions, parameter limits package dimensions without notice. Information furnished Semelab believed both accurate reliable time going press. However Semelab assumes responsibility errors omissions discovered use. Semelab encourages customers verify that datasheets current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Document Number 3093 Issue
2N6782
ELECTRICAL CHARACTERISTICS (Tcase 25°C unless otherwise stated)
Parameter
STATIC ELECTRICAL RATINGS BVDSS Drain Source Breakdown Voltage VGS(th) Gate Threshold Voltage IGSSF IGSSR IDSS ID(on) VDS(on) RDS(on) Gate Body Leakage Forward Gate Body Leakage Reverse Zero Gate Voltage Drain Current State Drain Current1 Static Drain Source On-State Voltage1 Static Drain Source On-State Resistance1 DYNAMIC CHARACTERISTICS Ciss Coss Crss td(on) td(off) Forward Transductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 1MHz 2.25A 2.25A 1.0* 3.0* 200* 100* -20V 80V. 100v 3.5A 2.25A 125°C 125°C 2.1* 0.6* 1.08* 125°C 0.25mA 0.5A 125°C 100* 4.0* 4.0* 100* 200* -100* 0.25*
Test Conditions
Min.
Typ.
Max.
Unit
(MOSFET switching times essentially independent operating temperature.)
BODY- DRAIN DIODE RATINGS CHARACTERISTICS Modified POWER Continuous Source Current Body
Diode Source Current1 (Body Diode) Diode Forward Voltage Reverse Recovery Time
3.5*
symbol showing intergal junction rectifier.
1.5*
3.5A 25°C 100A/µs
25°C
THERMAL CHARACTERISTICS Thermal Resistance Junction Case Thermal Resistance Junction Ambient Notes Pulse Test: Pulse Width 300µs,
Free Operation
8.33*
°C\W
JEDEC registered Values
Semelab reserves right change test conditions, parameter limits package dimensions without notice. Information furnished Semelab believed both accurate reliable time going press. However Semelab assumes responsibility errors omissions discovered use. Semelab encourages customers verify that datasheets current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Document Number 3093 Issue
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