MECHANICAL DATA Dimensions (inches) SILICON EPITAXIAL TRANSISTOR

The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers.

MECHANICAL DATA Dimensions (inches) SILICON EPITAXIAL TRANSISTOR

Datasheet Thumbnail

Top Searches for this datasheet

2N5786
MECHANICAL DATA Dimensions (inches)
SILICON EPITAXIAL TRANSISTOR
6.10 (0.240) 6.60 (0.260)
12.70 (0.500) min.
0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia.
5.08 (0.200) typ.
FEATURES
2.54 (0.100)
0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034)
General purpose power transistor switching linear applications hermetic TO-39 package.
TO39 PACKAGE (TO-205AD)
Emitter Base Collector
ABSOLUTE MAXIMUM RATINGS 25°C unless otherwise stated)
VCBO VCER(sus) VCEO(sus) VEBO TSTG Collector Base Voltage Collector Emitter Sustaining Voltage Collector Emitter Sustaining Voltage Emitter Base Voltage Continuous Collector Current Continuous Collector Current Total Device Dissipation 25°C Derate above 25°C Total Device Dissipation 25°C Derate above 25°C Operating Junction Storage Temperature Range Lead temperature, 1/32" (0.8mm) from seating plane max. 3.5V 3.5A 0.0057W/°C 0.057W/°C +200°C 230°C
Semelab reserves right change test conditions, parameter limits package dimensions without notice. Information furnished Semelab believed both accurate reliable time going press. However Semelab assumes responsibility errors omissions discovered use. Semelab encourages customers verify that datasheets current before placing orders.
Semelab plc.
Telephone +44(0)1455) 556565. +44(0)1455) 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Document Number 3079 Issue:
2N5786
ELECTRICAL CHARACTERISTICS 25°C unless otherwise stated)
Parameter ICER ICEX ICEO IEBO hFE* Collector Cut-off Current Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current Current Gain Test Conditions -3.5V
Min. 150°C -1.5V 150°C 1.6A 3.2A 1.6A 0.16mA 0.8mA 100mA 100mA
Typ.
Max.
Unit
VCEO(sus)* Collector Emitter Sustaining Voltage 0.1A VCER(sus)* Collector Emitter Sustaining Voltage VCE(sat)
0.1A 1.6A 3.2A 200kHz 1kHz
Base Emitter Voltage Collector Emitter Saturation Voltage Small Signal Common Emitter Current Gain Small Signal Common Emitter Current Gain Turn-on Time Turn-off Time Thermal Resistance Junction Case Thermal Resistance Junction Ambient
17.5 °C/W
tOFF
NOTES
Pulse Test: 300µs, 1.8%. These tests MUST measured curve tracer. Measured 1/4" (6.35 from case. Lead resistance critical this test. Measured frequency where decreasing approximately octave.
Semelab reserves right change test conditions, parameter limits package dimensions without notice. Information furnished Semelab believed both accurate reliable time going press. However Semelab assumes responsibility errors omissions discovered use. Semelab encourages customers verify that datasheets current before placing orders.
Semelab plc.
Telephone +44(0)1455) 556565. +44(0)1455) 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Document Number 3079 Issue:

MECHANICAL DATA Dimensions (inches) SILICON EPITAXIAL TRANSISTOR

Top Searches for this datasheet

Other recent searches