MECHANICAL DATA Dimensions (inches) N-CHANNEL POWER MOSFET 2

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MECHANICAL DATA Dimensions (inches) N-CHANNEL POWER MOSFET 2

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2N6782LCC4
MECHANICAL DATA Dimensions (inches)
N-CHANNEL POWER MOSFET
2.16 (0.085)
1.27 (0.050) 1.07 (0.040)
9.14 (0.360) 8.64 (0.340)
1.39 (0.055) 1.02 (0.040)
7.62 (0.300) 7.12 (0.280)
0.76 (0.030) 0.51 (0.020)
VDSS ID(cont) RDS(on)
FEATURES
100V 3.1A 0.6W
1.65 (0.065) 1.40 (0.055)
0.33 (0.013) Rad. 0.08 (0.003)
SURFACE MOUNT SMALL FOORPRINT HERMETICALLY SEALED DYNAMIC dv/dt RATING
1.39 (0.055) 1.15 (0.045)
0.43 (0.017) 0.18 (0.007 Rad.
LCC4 MOSFET
GATE DRAIN SOURCE
AVALANCHE ENERGY RATING PINS
1,2,15,16,17,18 6,7,8,9,10,11,12,13
TRANSISTOR
BASE COLLECTOR EMITTER
SIMPLE DRIVE REQUIREMENTS LIGHTWEIGHT
ABSOLUTE MAXIMUM RATINGS (Tcase 25°C unless otherwise stated)
dv/dt Tstg Gate Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current Power Dissipation Tcase 25°C Linear Derating Factor Single Pulse Avalanche Energy Peak Diode Recovery Operating Storage Temperature Range Surface Temperature sec).
Notes Pulse Test: Pulse Width 300ms, 570mH Peak Starting 25°C di/dt 140A/ms BVDSS 150°C Suggested 7.5W
±20V (VGS Tcase 25°C) (VGS Tcase 100°C) 3.1A 2.0A 0.09W/°C 68mJ 5.5V/ns +150°C 300°C
Semelab plc.
Telephone +44(0)1455 556565. +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
10/99
2N6782LCC4
ELECTRICAL CHARACTERISTICS (Tcase 25°C unless otherwise stated)
Parameter
STATIC ELECTRICAL RATINGS BVDSS Drain Source Breakdown Voltage DBVDSS Temperature Coefficient Breakdown Voltage Static Drain Source On-State RDS(on) Resistance VGS(th) Gate Threshold Voltage Forward Transconductance IDSS IGSS IGSS Ciss Coss Crss td(on) td(off) Zero Gate Voltage Drain Current Forward Gate Source Leakage Reverse Gate Source Leakage DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate Source Charge Gate Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time
Test Conditions
Reference 25°C 3.1A 250mA 0.8BVDSS 125°C -20V 1MHz 3.1A 0.5BVDSS 3.1A 7.5W
Min.
Typ.
Max.
Unit
0.10 0.69 -100 Negligible
SOURCE DRAIN DIODE CHARACTERISTICS Continuous Source Current Pulse Source Current 3.1A 25°C Diode Forward Voltage Reverse Recovery Time 7.4A 25°C Reverse Recovery Charge 100A/ms Forward Turn-On Time THERMAL CHARACTERISTICS
RqJC Thermal Resistance Junction Case RqJPC Thermal Resistance Junction Board
Notes Pulse Test: Pulse Width 300ms, Repetitive Rating Pulse width limited maximum junction temperature.
°C/W
Semelab plc.
Telephone +44(0)1455 556565. +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
10/99

MECHANICAL DATA Dimensions (inches) N-CHANNEL POWER MOSFET 2

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