These N-channel enhancement mode power field effect transistors produc

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These N-channel enhancement mode power field effect transistors produc

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NDP410A NDP410AE NDP410B NDP410BE NDB410A NDB410AE NDB410B NDB410BE N-Channel Enhancement Mode Field Effect Transistor
These N-channel enhancement mode power field effect transistors produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process been especially tailored minimize on-state resistance, provide superior switching performance, withstand high energy pulses avalanche commutation modes. These devices particularly suited voltage applications such automotive, DC/DC converters, motor controls, other battery powered circuits where fast switching, in-line power loss, resistance transients needed.
Features
100V. RDS(ON) 0.25 0.30. Critical electrical parameters specified elevated temperature. Rugged internal source-drain diode eliminate need external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design extremely RDS(ON). TO-220 TO-263 (D2PAK) package both through hole surface mount applications.
Absolute Maximum Ratings
Symbol Parameter VDSS VDGR VGSS Drain-Source Voltage Drain-Gate Voltage (RGS Gate-Source Voltage Continuous Nonrepetitive Drain Current Continuous Pulsed Total Power Dissipation 25°C Derate above 25°C TJ,TSTG
25°C unless otherwise noted
NDP410A NDP410AE NDB410A NDB410AE 0.33
NDP410B NDP410BE NDB410B NDB410BE
Units
W/°C
Operating Storage Temperature Range Maximum lead temperature soldering purposes, 1/8" from case seconds
1997 Fairchild Semiconductor Corporation
NDP410.SAM
Electrical Characteristics
Symbol Parameter Single Pulse Drain-Source Avalanche Energy
25°C unless otherwise noted)
Conditions
Type NDP410AE NDP410BE NDB410AE NDB410BE
Units
DRAIN-SOURCE AVALANCHE RATINGS (Note
Maximum Drain-Source Avalanche Current
CHARACTERISTICS BVDSS IDSS IGSSF IGSSR VGS(th) RDS(ON) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage, Forward Gate Body Leakage, Reverse Gate Threshold Voltage Static Drain-Source On-Resistance VGS, 125°C 125°C ID(on) On-State Drain Current 125°C 125°C NDP410A NDP410AE NDB410A NDB410AE NDP410B NDP410BE NDB410B NDB410BE NDP410A NDP410AE NDB410A NDB410AE NDP410B NDP410BE NDB410B NDB410BE Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance DYNAMIC CHARACTERISTICS 0.38 -100 0.25
CHARACTERISTICS (Note
Ciss Coss Crss
NDP410.SAM
Electrical Characteristics
Symbol tD(ON) tD(OFF) Parameter Turn Delay Time Turn Rise Time Turn Delay Time Turn Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
25°C unless otherwise noted)
Conditions RGEN
Type
11.6
Units
SWITCHING CHARACTERISTICS (Note
NDP410A NDP410AE NDB410A NDB410AE NDP410B NDP410BE NDB410B NDB410BE
DRAIN-SOURCE DIODE CHARACTERISTICS Maximum Continuos Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
NDP410A NDP410AE NDB410A NDB410AE NDP410B NDP410BE NDB410B NDB410BE
(Note
Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Current
dIS/dt A/µs
125°C
0.87 0.75
THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 62.5 °C/W °C/W
Notes: NDP410A/410B NDB410A/410B rated operation avalanche mode. Pulse Test: Pulse Width Duty Cycle 2.0%.
NDP410.SAM
Typical Electrical Characteristics
DRAIN-SOURCE CURRENT
DS(on) NORMALIZED DRAIN-SOURCE ON-RESISTANCE
DRAIN-SOURCE VOLTAGE
DRAIN CURRENT
Figure On-Region Characteristics.
Figure On-Resistance Variation with Gate Voltage Drain Current.
4.5A
DRAIN-SOURCE ON-RESISTANCE DRAIN-SOURCE ON-RESISTANCE
125°C
DS(ON), NORMALIZED
DS(on), NORMALIZED
25°C
-55°C
JUNCTION TEMPERATURE (°C)
DRAIN CURRENT
Figure On-Resistance Variation with Temperature.
Figure On-Resistance Variation with Drain Current Temperature.
NORMALIZED GATE-SOURCE THRESHOLD VOLTAGE
DRAIN CURRENT
-55°C
250µA
GATE SOURCE VOLTAGE
JUNCTION TEMPERATURE (°C)
Figure Transfer Characteristics.
Figure Gate Threshold Variation with Temperature.
NDP410.SAM
Typical Electrical Characteristics (continued)
1.06 DRAIN-SOURCE BREAKDOWN VOLTAGE
250µA
1.04
REVERSE DRAIN CURRENT
125°C 25°C
NORMALIZED
1.02
-55°C
0.98
0.96
JUNCTION TEMPERATURE (°C)
0.01
BODY DIODE FORWARD VOLTAGE
Figure Breakdown Voltage Variation with Temperature.
Figure Body Diode Forward Voltage Variation with Current Temperature.
1000 CAPACITANCE (pF)
GATE-SOURCE VOLTAGE
DRAIN SOURCE VOLTAGE
GATE CHARGE (nC)
Figure Capacitance Characteristics.
Figure Gate Charge Characteristics.
d(on)
d(off)
Output, Vout
Inverted
Input,
Pulse Width
Figure Switching Test Circuit.
Figure Switching Waveforms.
NDP410.SAM
Typical Electrical Characteristics (continued)
TRANSCONDUCTANCE (SIEMENS)
-55°C 25°C 125°C
adjusted reach desired peak inductive current,
DRAIN CURRENT
Figure Transconductance Variation with Drain Current Temperature.
Figure Unclamped Inductive Load Circuit Waveforms.
DRAIN CURRENT
SINGLE PULSE 25°C
DRAIN-SOURCE VOLTAGE
Figure Maximum Safe Operating Area.
TRANSIENT THERMAL RESISTANCE
r(t), NORMALIZED EFFECTIVE
r(t) °C/W
0.05 P(pk)
0.05 0.03 0.02
0.02 0.01 Single Pulse
Duty Cycle, 0.05 ,TIME (ms) 1000
0.01 0.01
0.02
Figure Transient Thermal Response Curve.
NDP410.SAM

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