CHANNEL 100V 0.021 TO247 STripFETPOWER MOSFET TYPE 55NE10 DS

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CHANNEL 100V 0.021 TO247 STripFETPOWER MOSFET TYPE 55NE10 DS

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STW55NE10
CHANNEL 100V 0.021 TO247 STripFETPOWER MOSFET
TYPE 55NE10
DS(on) <0.027
TYPICAL RDS(on) 0.021 EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE APPLICATION ORIENTED CHARACTERIZATION
DESCRIPTION This Power MOSFET latest development STMicroelectronics unique "Single Feature SizeTM" strip-based process. resulting transistor shows extremely high packing density on-resistance, rugged avalanche characteristics less critical alignment steps therefore remarkable manufacturing reproducibility. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SOLENOID RELAY DRIVERS MOTOR CONTROL, AUDIO AMPLIFIERS DC-DC DC-AC CONVERTERS AUTOMOTIVE ENVIRONMENT
TO-247
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Drain-source Voltage (VGS Drain- gate Voltage ate-source Voltage Drain Current (continuous) Drain Current (continuous) Drain Current (pulsed) otal Dissipation Derating Factor dv/dt Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature
Value
di/dt A/µs, V(BR)DSS, TJMAX
V/ns
Pulse width limited safe operating area
January 1999
STW55NE10
THERMAL DATA
-case
Rthj -amb
thc-sink
Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead Temperature Soldering Purpose
0.83
oC/W
AVALANCHE CHARACTERISTICS
Symbo Parameter Avalanche Current, Repetitive Not-Repetitive (pulse width limited max) Single Pulse Avalanche Energy (starting Value Unit
ELECTRICAL CHARACTERISTICS (Tcase unless otherwise specified)
Symbo (BR)DSS IGSS Parameter Drain-source Breakdown Voltage Test ditions Min. Typ. Max. Unit
Rating Zero Gate Voltage Drain Current Rating Gate-body Leakage Current (VDS
Symbo GS(th) DS(on) Parameter Gate Threshold Voltage Static Drain-source Resistance State Drain Current Test ditions 27.5 Min. Typ. 0.021 Max. 0.027 Unit
ID(o DS(on
DYNAMIC
Symbo Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test ditions ID(o DS(on Min. Typ. 4350 Max. Unit
STW55NE10
ELECTRICAL CHARACTERISTICS (continued) SWITCHING
Symbo d(on) Parameter Turn-on Time Rise Time Total Charge Gate-Source Charge Gate-Drain Charge Test ditions =4.7 (see test circuit, figure Min. Typ. Max. Unit
SWITCHING
Symbo (Voff) Parameter Off-voltage Rise Fall Cross-over Time Test ditions =4.7 (see test circuit, figure Min. Typ. Max. Unit
SOURCE DRAIN DIODE
Symbo Parameter Source-drain Current Source-drain Current (pulsed) Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current 10.5 di/dt A/µs (see test circuit, figure Test ditions Min. Typ. Max. 1100 Unit
Pulsed: Pulse duration duty cycle Pulse width limited safe operating area
Safe Operating Area
Thermal Impedance
STW55NE10
Output Characteristics Transfer Characteristics
Transconductance
Static Drain-source Resistance
Gate Charge Gate-source Voltage
Capacitance Variations
STW55NE10
Normalized Gate Threshold Voltage Temperature Normalized Resistance Temperature
Source-drain Diode Forward Characteristics
STW55NE10
Fig. Unclamped Inductive Load Test Circuit Fig. Unclamped Inductive Waveform
Fig. Switching Times Test Circuits Resistive Load
Fig. Gate Charge test Circuit
Fig. Test Circuit Inductive Load Switching Diode Recovery Times
STW55NE10
TO-247 MECHANICAL DATA
MIN. 3.55 15.3 19.7 14.2 34.6 3.65 0.079 0.140 10.9 15.9 20.3 14.8 0.602 0.776 0.559 0.413 1.362 0.217 0.118 0.144 TYP. MAX. MIN. 0.185 0.087 0.016 0.039 0.079 0.118 0.429 0.626 0.779 0.582 inch TYP. MAX. 0.209 0.102 0.031 0.055 0.094 0.134
DIM.
P025P
STW55NE10
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CHANNEL 100V 0.021 TO247 STripFETPOWER MOSFET TYPE 55NE10 DS

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