VGS(th)= +0.8V EPAD QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPA

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VGS(th)= +0.8V EPAD QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPA

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VGS(th)= +0.8V
EPAD
QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD® MATCHED PAIR MOSFET ARRAY
GENERAL DESCRIPTION monolithic quad/ dual N-Channel MOSFETs matched factory using ALD's proven EPAD® CMOS technology. These devices intended voltage, small signal applications. These MOSFET devices built same monolithic chip, they exhibit excellent temperature tracking characteristics. They versatile circuit elements useful design component broad range analog applications. They basic building blocks current sources, differential amplifier input stages, transmission gates, multiplexer applications. most applications, connect pins most negative voltage potential system most positive voltage potential left open unused). other pins must have voltages within these voltage limits. ALD110808/ALD110908 devices built minimum offset voltage differential thermal response, they suited switching amplifying applications +1.0V +10V (+/- systems where input bias current, input capacitance fast switching speed desired. these MOSFET devices, they feature very large (almost infinite) current gain frequency, near operating environment. These devices suitable precision applications which require very high current gain, beta, such current mirrors current sources. high input impedance high current gain Field Effect Transistors result from extremely current loss through control gate. current gain limited gate input leakage current, which specified 30pA room temperature. example, beta device drain current input leakage current 30pA 25°C 3mA/30pA 100,000,000. FEATURES Enhancement-mode (normally off) Standard Gate Threshold Voltages: +0.8V Matched MOSFET MOSFET characteristics Tight parametric control input capacitance VGS(th) match 10mV High input impedance 1012 typical Positive,zero, negative VGS(th) temperature coefficient current gain >108 input output leakage currents ORDERING INFORMATION Operating Temperature Range* +70°C +70°C 16-Pin Plastic Package ALD110808APC ALD110808 16-Pin SOIC Package 8-Pin Plastic Package 8Pin SOIC Package APPLICATIONS Precision current mirrors Precision current sources Voltage choppers Differential amplifier input stage Voltage comparator Voltage bias circuits Sample Hold Analog inverter Level shifters Source followers buffers Current multipliers Analog switches multiplexers
CONFIGURATION
ALD110808 N/C* VDN4 N/C* VVVM4
N/C* N/C*
PACKAGES
ALD110908
N/C*
N/C*
PACKAGES *N/C pins internally connected. Connect reduce nois
ALD110808ASC ALD110908APA ALD110908ASA ALD110808SC ALD110908PA ALD110908SA
Contact factory industrial military temp. ranges user-specified threshold voltage values.
1.0-0506 Advanced Linear Devices, Inc. Tasman Drive, Sunnyvale, California 94089-1706 Tel: (408) 747-1155 Fax: (408) 747-1286 www.aldinc.com
ABSOLUTE MAXIMUM RATINGS
Drain-Source voltage, Gate-Source voltage, Power dissipation Operating temperature range package Storage temperature range Lead temperature, seconds 10.6V 10.6V +70°C -65°C +150°C +260°C
OPERATING ELECTRICAL CHARACTERISTICS open) 25°C unless otherwise specified CAUTION: Sensitive Device. static control procedures controlled environment.
ALD110808A ALD110908A Parameter Gate Threshold Voltage Symbol VGS(th) 0.78 0.80 0.82
ALD110808/ ALD110908 0.78 0.80 0.82 Unit Test Condition =1µA 0.1V IDS=1µA
Offset Voltage VGS1-VGS2 VGS1-VGS2 Tempco
-1.7 +1.6 12.0
-1.7 +1.6 12.0
VDS1= VDS2 20µA 0.1V 40µA VGS= +10.3V VGS= +4.8V VDS= +4.8V +9.8V
GateThreshold Tempco
VGS(th) (ON)
Drain Current
Forward Transconductanc
mmho
Transconductance Mismatch Output Conductanc
µmho =+4.8V +9.8V 0.1V +4.8V
Drain Source Resistanc
(ON)
Drain Source Resistance Mismatch Drain Source Breakdown Voltage Drain Source Leakage Current1
(ON)
BVDSX
1.0µA -0.2V -0.2V =10V, 125°C =125°C
(OFF) IGSS
Gate Leakage Current1
Input Capacitance Transfer Reverse Capacitance Turn-on Delay Time Turn-off Delay Time Crosstalk Notes:
CISS CRSS toff
100KHz
Consists junction leakage currents
Advanced Linear Devices

VGS(th)= +0.8V EPAD QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPA

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