VGS(th)= +0.4V EPAD QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPA

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VGS(th)= +0.4V EPAD QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPA

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ALD110804/ALD110904
VGS(th)= +0.4V
EPAD
QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD® MATCHED PAIR MOSFET ARRAY
GENERAL DESCRIPTION ALD110804/ALD110904 monolithic quad/dual N-Channel MOSFETs matched factory using ALD's proven EPAD® CMOS technology. These devices intended voltage, small signal applications. ALD110804/ALD110904 MOSFETs designed built exceptional device electrical characteristics matching. Since these devices same monolithic chip, they also exhibit excellent tempco tracking characteristics. They versatile circuit elements useful design components broad range analog applications, such basic building blocks current sources, differential amplifier input stages, transmission gates, multiplexer applications. most applications, connect pins most negative voltage potential system most positive voltage potential left open unused). other pins must have voltages within these voltage limits. ALD110804/ALD110904 devices built minimum offset voltage differential thermal response, they suited switching amplifying applications <+0.1V +10V systems where input bias current, input capacitance fast switching speed desired, these devices exhibit well controlled turn-off sub-threshold characteristics biased operated sub-threshold region. Since these MOSFET devices, they feature very large (almost infinite) current gain frequency, near operating environment. ALD110804/ALD110904 suitable very operating voltage very power (nanowatt), precision applications which require very high current gain, beta, such current mirrors current sources. high input impedance high current gain Field Effect Transistors result from extremely current loss through control gate. current gain limited gate input leakage current, which specified 30pA room temperature. example, beta device drain current input leakage current 30pA 25°C 3mA/30pA 100,000,000. FEATURES Enhancement-mode (normally off) Precision Gate Threshold Voltage +0.40V Matched MOSFET MOSFET characteristics Tight parametric control input capacitance VGS(th) match (VOS) 10mV High input impedance 1012 typical Positive, zero, negative VGS(th) temperature coefficient current gain >108 input output leakage currents ORDERING INFORMATION Operating Temperature Range* +70°C +70°C 16-Pin Plastic Package ALD110804PC 16-Pin SOIC Package ALD110804SC 8-Pin Plastic Package ALD110904PA 8Pin SOIC Package ALD110904SA APPLICATIONS
Ultra power (nanowatt) analog digital circuits Ultra operating voltage(<0.4V) circuits Sub-threshold biased operated circuits Precision current mirrors current sources Nano-Amp current sources High impedance resistor simulators Capacitive probes sensor interfaces Differential amplifier input stages Discrete Voltage comparators level shifters Voltage bias circuits Sample Hold circuits Analog digital inverters Charge detectors charge integrators Source followers High Impedance buffers Current multipliers Discrete Analog switches multiplexers
CONFIGURATION
ALD110804 N/C* VDN4 N/C* VPC, PACKAGES
N/C* N/C*
ALD110904
N/C*
N/C*
PACKAGES *N/C pins internally connected. Connect reduce nois
Contact factory industrial military temp. ranges user-specified threshold voltage values.
1.0-0506 Advanced Linear Devices, Inc. Tasman Drive, Sunnyvale, California 94089-1706 Tel: (408) 747-1155 Fax: (408) 747-1286 www.aldinc.com
ABSOLUTE MAXIMUM RATINGS
Drain-Source voltage, Gate-Source voltage, Power dissipation Operating temperature range package Storage temperature range Lead temperature, seconds 10.6V 10.6V +70°C -65°C +150°C +260°C
OPERATING ELECTRICAL CHARACTERISTICS open) 25°C unless otherwise specified CAUTION: Sensitive Device. static control procedures controlled environment.
ALD110804 ALD110904 Parameter Gate Threshold Voltage Offset Voltage VGS(th)1-VGS(th)2 Offset VoltageTempco GateThreshold Voltage Tempco Symbol VGS(th) TCVGS(th) 0.38 0.40 -1.7 +1.6 12.0 0.42 Unit VDS1 VDS2 20µA, 0.1V 40µA 9.7V 4.2V 4.2V 9.2V Test Conditions =1µA 0.1V
Drain Current
(ON)
Forward Transconductanc
mmho
Transconductance Mismatch Output Conductanc
(ON)
µmho =+4.2V +9.2V 0.1V +4.2V
Drain Source Resistanc
Drain Source Resistance Mismatch Drain Source Breakdown Voltage Drain Source Leakage Current1
(ON) BVDSX (OFF) IGSS CISS CRSS toff
1.0µA -0.8V -0.8V =10V, 125°C =125°C
Gate Leakage Current1
Input Capacitance Transfer Reverse Capacitance Turn-on Delay Time Turn-off Delay Time Crosstalk Notes:
100KHz
Consists junction leakage currents
ALD110804/ALD110904
Advanced Linear Devices

VGS(th)= +0.4V EPAD QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPA

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