VGS(th)= +0.0V EPAD QUAD/DUAL N-CHANNEL ZERO THRESHOLDEPAD®

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VGS(th)= +0.0V EPAD QUAD/DUAL N-CHANNEL ZERO THRESHOLDEPAD®

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VGS(th)= +0.0V
EPAD
QUAD/DUAL N-CHANNEL ZERO THRESHOLDEPAD® MATCHED PAIR MOSFET ARRAY
GENERAL DESCRIPTION monolithic quad/dual N-Channel MOSFETs matched factory using ALD's proven EPAD® CMOS technology. These devices intended voltage, small signal applications. ALD110800/ALD110900 features zero threshold voltage, which reduces eliminates input output voltage level shift, including circuits where signal referenced This feature greatly reduces output signal voltage level shift enhances signal operating range, especially very operating voltage environments. With these zero threshold devices analog circuit with multiple stages constructed operate extremely supply bias voltage levels. example, input amplifier stage operating 0.2V supply voltage been demonstrated. matched pair MOSFETs designed exceptional device electrical characteristics matching. these devices same monolithic chip, they also exhibit excellent tempco tracking characteristics. They versatile design components broad range analog applications such basic building blocks current sources, differential amplifier input stages, transmission gates, multiplexer applications. Besides matched pair electrical characteristics, each individual MOSFET also exhibits well controlled parameters, enabling user depend tight design limits. Even units from different batches different date manufacture have correspondingly well matched characteristics. These devices built minimum offset voltage differential thermal response, they designed switching amplifying applications +0.2V +10V systems where input bias current, input capacitance fast switching speed desired. VGS(th) these devices +0.0V, which classify them both enhancement mode depletion mode devices. When gate 0.0V, drain current +1µA =1+0.1V, which allow class circuits with output voltage level biased near input voltage level without voltage level shift. These devices exhibit same well controlled turn-off sub-threshold characteristics standard enhancement mode MOSFETs. MOSFET devices that feature high input impedance (1012) high current gain (>108 sample calculation current gain drain current input leakage current 30pA 25°C 3mA/ 30pA 100,000,000. most applications, connect most positive voltage potential left open unused) pins most negative voltage potential system. other pins must have voltages within these voltage limits. ORDERING INFORMATION Operating Temperature Range* +70°C +70°C 16-Pin Plastic Package ALD110800APC ALD110800PC 16-Pin SOIC Package 8-Pin Plastic Package 8-Pin SOIC PackagN/C*
FEATURES Precision zero threshold voltage mode Nominal RDS(ON) @VGS=0.0V 104K Matched MOSFET MOSFET characteristics Tight parametric control VGS(th) match (VOS) 10mV Positive, zero, negative VGS(th) tempco input capacitance input/output leakage currents APPLICATIONS Very voltage analog digital circuits Zero power fail safe circuits Backup battery circuits power failure detector level voltage clamp zero crossing detector Source followers buffers Precision current mirrors current sources Capacitives probes sensor interfaces Charge detectors charge integrators Differential amplifier input stage High side switches Peak detectors level shifters Sample Hold Current multipliers Analog switches multiplexers Voltage comparators level shifters CONFIGURATION
ALD110800 N/C* VDN4 N/C* VPC, PACKAGES
N/C* N/C*
ALD110900
N/C*
ALD110800ASC ALD110900APA ALD110900ASA ALD110800SC ALD110900PA ALD110900SA
Contact factory industrial temp. range user-specified threshold voltage values
PACKAGES *N/C pins internally connected. Connect reduce nois
1.0-0506 ©2005 Advanced Linear Devices, Inc. Tasman Drive, Sunnyvale, California 94089-1706 Tel: (408) 747-1155 Fax: (408) 747-1286 www.aldinc.com
ABSOLUTE MAXIMUM RATINGS
Drain-Source voltage, Gate-Source voltage, Power dissipation Operating temperature range package Storage temperature range Lead temperature, seconds 10.6V 10.6V +70°C -65°C +150°C +260°C
OPERATING ELECTRICAL CHARACTERISTICS open) 25°C unless otherwise specified
CAUTION: Sensitive Device. static control procedures controlled environment.
ALD110800A ALD110900A Parameter Gate Threshold Voltage Offset Voltage VGS(th)1-VGS(th)2 Offset Voltage Tempco GateThreshold Voltage Tempco Symbol VGS(th) TCVOS TCVGS(th) -0.01 0.00 0.01 ALD110800/ ALD110900 -0.02 0.00 0.02 Unit Test Conditions =1µA, 0.1V
-1.7 +1.6 12.0
-1.7 +1.6 12.0
µV/°C mV/°C
VDS1 VDS2 1µA, 0.1V 20µA, 0.1V 40µA, 0.1V +9.5V, +4.0V, +4.0V +9.0V
Drain Current
(ON)
Forward Transconductanc
mmho
Transconductance Mismatch Output Conductanc
(ON)
µmho +4.0V +9.0V +0.1V +4.0V +0.1V +0.0V +0.1V +4.0V
Drain Source Resistanc
Drain Source Resistanc
(ON)
Drain Source Resistance Tolerance Drain Source Resistance Mismatch Drain Source Breakdown Voltage Drain Source Leakage Current1
(ON)
(ON) BVDSX (OFF)
1.0µA -1.0V -1.0V, =+5V 125°C +10V =125°C
Gate Leakage Current1
IGSS CISS CRSS toff
Input Capacitance Transfer Reverse Capacitance Turn-on Delay Time Turn-off Delay Time Crosstalk Notes:
100KHz
Consists junction leakage currents
Advanced Linear Devices

VGS(th)= +0.0V EPAD QUAD/DUAL N-CHANNEL ZERO THRESHOLDEPAD®

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