Features on-resistance High speed switching drive current gate dr

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Features on-resistance High speed switching drive current gate dr

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2SK974(L), 2SK974(S)
Features
on-resistance High speed switching drive current gate drive device driven from source Suitable motor drive, DC-DC converter, power switch solenoid drive
Outline
DPAK-1 Gate Drain Source Drain
2SK974(L), 2SK974(S)
Absolute Maximum Ratings 25°C)
Item Drain source voltage Gate source voltage Drain current Drain peak current Body drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes duty cycle Value 25°C Symbol VDSS VGSS ID(peak)* Pch* Tstg
Ratings +150
Unit
2SK974(L), 2SK974(S)
Electrical Characteristics 25°C)
Item Drain source breakdown voltage Gate source breakdown voltage Gate source leak current Symbol V(BR)DSS V(BR)GSS IGSS VGS(off) RDS(on) 0.15 0.20 Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body drain diode forward voltage Body drain diode reverse recovery time Note Pulse test |yfs| Ciss Coss Crss td(on) td(off) 0.18 0.25 Unit diF/dt A/µs Test conditions ±100
Zero gate voltage drain current IDSS Gate source cutoff voltage Static drain source state resistance
2SK974(L), 2SK974(S)
Power Temperature Derating Channel Dissipation Drain Current
Case Temperature (°C)
Maximum Safe Operation Area
Drain Source Voltage
mite 25°C
Typical Output Characteristics Drain Current Pulse Test
Typical Transfer Characteristics
Drain Current
Pulse Test
-25°C 25°C
75°C
Drain Source Voltage Drain Source Saturation Voltage Gate Source Voltage Static Drain Source State Resistance (on)
Gate Source Voltage Static Drain Source State Resistance Drain Current
Drain Source Saturation Voltage (on)
Pulse Test
0.05 Pulse Test
Gate Source Voltage
Drain Current
Static Drain Source State Resistance Temperature Static Drain Source State Resistance (on) Forward Transfer Admittance Pulse Test
Forward Transfer Admittance Drain Current Pulse Test -25°C 25°C
75°C
0.05
Case Temperature (°C)
Drain Current
2SK974(L), 2SK974(S)
Body Drain Diode Reverse Recovery Time Reverse Recovery Time (ns) di/dt A/µs, 25°C Pulse Test 10000 3000 Capacitance (pF) 1000 Ciss Crss Reverse Drain Current Drain Source Voltage Coss Typical Capacitance Drain Source Voltage
Dynamic Input Characteristics Drain Source Voltage Gate Source Voltage
Switching Characteristics (off) Switching Time (ns)
duty
(on) Drain Current
Gate Charge (nc)
2SK974(L), 2SK974(S)
Reverse Drain Current Source Drain Voltage Reverse Drain Current Pulse Test
Source Drain Voltage
Normalized Transient Thermal Impedance
Normalized Transient Thermal Impedance Pulse Width
25°C
0.05 0.02
ch-c ch-c ch-c 6.25°C/W, 25°C
0.03 0.01
0.01
Pulse Width
100µ
Switching Time Test Circuit Monitor Vout Monitor D.U.T Vout (on) (off) Wavewforms
2SK974(L), 2SK974(S)
Notice
When using this document, keep following mind: This document may, wholly partially, subject change without notice. rights reserved: permitted reproduce duplicate, form, whole part this document without Hitachi's permission. Hitachi will held responsible damage user that result from accidents other reasons during operation user's unit according this document. Circuitry other examples described herein meant merely indicate characteristics performance Hitachi's semiconductor products. Hitachi assumes responsibility intellectual property claims other problems that result from applications based examples described herein. license granted implication otherwise under patents other rights third party Hitachi, Ltd. MEDICAL APPLICATIONS: Hitachi's products authorized MEDICAL APPLICATIONS without written consent appropriate officer Hitachi's sales company. Such includes, limited life support systems. Buyers Hitachi's products requested notify relevant Hitachi sales offices when planning products MEDICAL APPLICATIONS.

Features on-resistance High speed switching drive current gate dr

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