Features on-resistance High speed switching drive current gate dr
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2SK972
Features
on-resistance High speed switching drive current gate drive device driven from source Suitable motor drive, DC-DC converter, power switch solenoid drive
Outline
TO-220AB
Gate Drain (Flange) Source
2SK972
Absolute Maximum Ratings 25°C)
Item Drain source voltage Gate source voltage Drain current Drain peak current Body drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes duty cycle Value 25°C Symbol VDSS VGSS ID(pulse)* Pch* Tstg
Ratings +150
Unit
2SK972
Electrical Characteristics 25°C)
Item Drain source breakdown voltage Gate source breakdown voltage Gate source leak current Symbol V(BR)DSS V(BR)GSS IGSS VGS(off) RDS(on) 0.033 0.05 Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body drain diode forward voltage Body drain diode reverse recovery time Note Pulse test |yfs| Ciss Coss Crss td(on) td(off) 1400 0.04 0.06 Unit diF/dt A/µs Test conditions ±100
Zero gate voltage drain current IDSS Gate source cutoff voltage Static drain source state resistance
2SK972
Power Temperature Derating Channel Dissipation
Maximum Safe Operation Area
Drain Current
25°C
Case Temperature (°C)
Drain Source Voltage
Typical Output Characteristics Drain Current Pulse Test Drain Source Voltage Drain Source Saturation Voltage Gate Source Voltage Drain Source Saturation Voltage (on) Static Drain Source Static Resistance (on) Pulse Test
Typical Transfer Characteristics 75°C Pulse Test 25°C -25°C
Drain Current
Gate Source Voltage Static Drain Source State Resistance Drain Current Pulse Test
0.05
0.02 0.01 0.005 Drain Current
Gate Source Voltage
Static Drain Source State Resistance Temperature Static Drain Source State Resistance (on) Pulse Test 0.08 0.04 0.02 Forward Transfer Admittance 0.10
Forward Transfer Admittance Drain Current Pulse Test
-25°C 25°C
0.06
75°C
Case Temperature (°C)
Drain Current
2SK972
Body Diode Reverse Recovery Time 1,000 Reverse Recovery Time (ns) di/dt A/µs, 25°C Pulse Test Capacitance (pF) 10,000 3,000 Ciss 1,000 Coss Crss Reverse Drain Current Drain Source Voltage Typical Capacitance Drain Source Voltage
Dynamic Input Characteristics Drain Source Voltage Gate Source Voltage 1000 Switching Time (ns)
Switching Characteristics
(off)
2µs, duty
(on) Drain Current
Gate Charge (nc)
2SK972
Reverse Drain Current Source Drain Voltage Reverse Drain Current Pulse Test
Source Drain Voltage
Normalized Transient Thermal Impedance
Normalized Transient Thermal Impedance Pulse Width
25°C
0.03 0.01
100µ Pulse Width
0.05 0.02
ch-c(t) ch-c ch-c 2.5°C/W, 25°C
Switching Time Test Circuit Monitor Vout Monitor D.U.T Vout (on) (off) Wavewforms
2SK972
Notice
When using this document, keep following mind: This document may, wholly partially, subject change without notice. rights reserved: permitted reproduce duplicate, form, whole part this document without Hitachi's permission. Hitachi will held responsible damage user that result from accidents other reasons during operation user's unit according this document. Circuitry other examples described herein meant merely indicate characteristics performance Hitachi's semiconductor products. Hitachi assumes responsibility intellectual property claims other problems that result from applications based examples described herein. license granted implication otherwise under patents other rights third party Hitachi, Ltd. MEDICAL APPLICATIONS: Hitachi's products authorized MEDICAL APPLICATIONS without written consent appropriate officer Hitachi's sales company. Such includes, limited life support systems. Buyers Hitachi's products requested notify relevant Hitachi sales offices when planning products MEDICAL APPLICATIONS.
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