CHANNEL 250V 0.220 TO-220/TO-220FP PowerMESHMOSFET TYPE P16NB25 P

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CHANNEL 250V 0.220 TO-220/TO-220FP PowerMESHMOSFET TYPE P16NB25 P

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STP16NB25 STP16NB25FP
CHANNEL 250V 0.220 TO-220/TO-220FP PowerMESHMOSFET
TYPE P16NB25 P16NB25FP
DS(on) 0.28 0.28
TYPICAL RDS(on) 0.220 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED
DESCRIPTION Using latest high voltage MESH OVERLAYprocess, STMicroelectronics designed advanced family power MOSFETs with outstanding performances. patent pending strip layout coupled with Company's proprietary edge termination structure, gives lowest RDS(on) area, exceptional avalanche dv/dt capabilities unrivalled gate charge switching characteristics. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING UNINTERRUPTIBLE POWER SUPPLY (UPS) DC-DC DC-AC CONVERTERS TELECOM, INDUSTRIAL CONSUMER ENVIRONMENT ABSOLUTE MAXIMUM RATINGS
Symbol dv/dt( March 1999 Parameter Drain-source Voltage (VGS Drain- gate Voltage ate-source Voltage Drain Current (continuous) Drain Current (continuous) Drain Current (pulsed) otal Dissipation Derating Factor Peak Diode Recovery voltage slope Insulation ithstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature
TO-220
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
Value STP16NB25 P16NB25F 1.12
16A, di/dt A/µs, V(BR)DSS, TJMAX
0.36 2000 V/ns
Pulse width limited safe operating area
STP16NB25/FP
THERMAL DATA
TO-220 -case -amb thc-sink Thermal Resistance Junction-case 62.5 O220FP 2.77
Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead Temperature Soldering Purpose
AVALANCHE CHARACTERISTICS
Symbo Parameter Avalanche Current, Repetitive Not-Repetitive (pulse width limited max) Single Pulse Avalanche Energy (starting Value Unit
ELECTRICAL CHARACTERISTICS (Tcase unless otherwise specified)
Symbo (BR)DSS IGSS Parameter Drain-source Breakdown Voltage Test ditions Min. Typ. Max. Unit
Rating Zero Gate Voltage Drain Current Rating Gate-body Leakage Current (VDS
Symbo GS(th) DS(on) Parameter Gate Threshold Voltage Static Drain-source Resistance State Drain Current Test ditions Min. Typ. 0.22 Max. 0.28 Unit
ID(o DS(on
DYNAMIC
Symbo Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test ditions ID(o DS(on Min. Typ. 1000 Max. Unit
STP16NB25/FP
ELECTRICAL CHARACTERISTICS (continued) SWITCHING
Symbo d(on) Parameter Turn-on Delay Rise Time Total Charge Gate-Source Charge Gate-Drain Charge Test ditions (Resistive Load, fig. Min. Typ. Max. Unit
SWITCHING
Symbo d(of (Voff) Parameter Turn-off Delay Fall Off-voltage Rise Fall Cross-over Time Test ditions (Resistive Load, fig. CLAMP (Induct Load, fig. Min. Typ. Max. Unit
SOURCE DRAIN DIODE
Symbo Parameter Source-drain Current Source-drain Current (pulsed) Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current di/dt A/µs (see test circuit, fig. Test ditions Min. Typ. Max. Unit
Pulsed: Pulse duration duty cycle Pulse width limited safe operating area
Safe Operating Area TO-220
Safe Operating Area TO-220FP
STP16NB25/FP
Thermal Impedance TO-220 Thermal Impedance forTO-220FP
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source Resistance
STP16NB25/FP
Gate Charge Gate-source Voltage Capacitance Variations
Normalized Gate Threshold Voltage Temperature
Normalized Resistance Temperature
Source-drain Diode Forward Characteristics
STP16NB25/FP
Fig. Unclamped Inductive Load Test Circuit Fig. Unclamped Inductive Waveform
Fig. Switching Times Test Circuits Resistive Load
Fig. Gate Charge test Circuit
Fig. Test Circuit Inductive Load Switching Diode Recovery Times
STP16NB25/FP
TO-220 MECHANICAL DATA
DIM. MIN. DIA. 13.0 2.65 15.25 3.75 0.49 0.61 1.14 1.14 4.95 10.0 16.4 14.0 2.95 15.75 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147
TYP. MAX. 4.60 1.32 2.72 1.27 0.70 0.88 1.70 1.70 5.15 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 MIN. 0.173 0.048 0.094 4.40 1.23 2.40
inch TYP. MAX. 0.181 0.051 0.107 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 0.645 0.551 0.116 0.620 0.260 0.154 0.151
Dia.
P011C
STP16NB25/FP
TO-220FP MECHANICAL DATA
DIM. MIN. 28.6 15.9 0.45 0.75 1.15 1.15 4.95 30.6 10.6 16.4 1.126 0.385 0.626 0.354 0.118 TYP. MAX. 2.75 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409
STP16NB25/FP
Information furnished believed accurate reliable. However, STMicroelect onics assumes responsibil consequences such information infringement patents other rights third partes which result from use. license granted implication otherwise under patent patent rights STMicroelectro nics. Specific ation mentioned this publication subjec change without notice. This publication supersedes replaces informaton previously supplied. STMicroelectronics products authorized critical components life support devices systems with express written approval STMicroelectronics. logo trademark STMicroelectronics 1999 STMicroelectronics Printed Italy Rights Reserved STMicroelectronics GROUP COMPANIES Australia Brazil Canada China France Germany Italy Japan Korea Malaysi Malta Mexico Morocco Netherlands Singapore Spain Sweden Switzerland Taiwan Thailand United Kingdom U.S.A. http://www.st.com

CHANNEL 250V 0.220 TO-220/TO-220FP PowerMESHMOSFET TYPE P16NB25 P

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