These logic level N-Channel enhancement mode power field effect transi

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NDP7052L NDB7052L N-Channel Logic Level Enhancement Mode Field Effect Transistor
These logic level N-Channel enhancement mode power field effect transistors produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process been especially tailored minimize on-state resistance, provide superior switching performance, withstand high energy pulses avalanche commutation modes. These devices particularly suited voltage applications such automotive, DC/DC converters, motor controls, other battery powered circuits where fast switching, in-line power loss, resistance transients needed.
Features
RDS(ON) 0.010 VGS= RDS(ON) 0.0075 VGS= drive requirements allowing operation directly from logic drivers. VGS(TH) 2.0V. Rugged internal source-drain diode eliminate need external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design extremely RDS(ON). TO-220 TO-263 (D2PAK) package both through hole surface mount applications.
Absolute Maximum Ratings
Symbol VDSS VDGR VGSS Parameter Drain-Source Voltage
25°C unless otherwise noted
NDP7052L
NDB7052L
Units
Drain-Gate Voltage (RGS Gate-Source Voltage Continuous Nonrepetitive Drain Current Continuous Pulsed
Maximum Power Dissipation 25°C Derate above 25°C
W/°C
TJ,TSTG
Operating Storage Temperature Range
THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 62.5 °C/W °C/W
1997 Fairchild Semiconductor Corporation
NDP7052L Rev.B1
Electrical Characteristics 25°C unless otherwise noted)
Symbol Parameter Conditions Unit DRAIN-SOURCE AVALANCHE RATINGS (Note) BVDSS Single Pulse Drain-Source Avalanche Energy Maximum Drain-Source Avalanche Current
CHARACTERISTICS Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Zero Gate Voltage Drain Current Referenced 125°C IGSSF IGSSR Gate Body Leakage, Forward Gate Body Leakage, Reverse
(Note)
0.075 -100
V/oC V/oC 0.01 0.018 0.0075
BVDSS/TJ
IDSS
Referenced VGS, 125°C 37.5 150°C 37.5 -0.005 0.85 0.0085 0.014 0.0065
CHARACTERISTICS
VGS(th)/TJ
VGS(th) RDS(ON)
Gate Threshold VoltageTemp.Coefficient Gate Threshold Voltage
Static Drain-Source On-Resistance
ID(on)
On-State Drain Current Forward Transconductance
37.5
DYNAMIC CHARACTERISTICS
Ciss Coss Crss
tD(on) tD(off)
Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note)
4030 1260
SWITCHING CHARACTERISTICS
Turn Delay Time Turn Rise Time Turn Delay Time Turn Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
37.5 RGEN
VDS=
DRAIN-SOURCE DIODE CHARACTERISTICS Maximum Continuos Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Current 37.5 37.5 dIF/dt A/µs
(Note)
Note: Pulse Test: Pulse Width Duty Cycle 2.0%.
NDP7052L Rev.B1
Typical Electrical Characteristics
DRAIN-SOURCE ON-RESISTANCE
DRAIN-SOURCE CURRENT
DS(on) NORMALIZED
3.0V
DRAIN-SOURCE VOLTAGE
DRAIN CURRENT
Figure On-Region Characteristics.
Figure On-Resistance Variation with Drain Current Gate Voltage.
0.08
DRAIN-SOURCE ON-RESISTANCE
37.5A
1.75
25°C
DS(on) ON-RESISTANCE (OHM)
0.06
ID=37.5A 125°C
DS(ON), NORMALIZED
1.25
0.04
0.02
0.75
JUNCTION TEMPERATURE (°C)
GATE SOURCE VOLTAGE
Figure On-Resistance Variation with Temperature.
Figure Resistance Variation with Gate-To- Source Voltage.
25°C 125°C
REVERSE DRAIN CURRENT
DRAIN CURRENT
-55°C
125°C
25°C
-55°C
0.01
0.001
0.0001 GATE SOURCE VOLTAGE BODY DIODE FORWARD VOLTAGE
Figure Transfer Characteristics.
Figure Body Diode Forward Voltage Variation with Source Current Temperature.
NDP7052L Rev.B1
Typical Electrical Characteristics (continued)
8000
GATE-SOURCE VOLTAGE
CAPACITANCE (pF)
4000
Ciss
2000 1500 1000
Coss
Crss
DRAIN SOURCE VOLTAGE
GATE CHARGE (nC)
Figure Gate Charge Characteristics.
Figure 8.Capacitance Characteristics.
2000
1500
POWER
DRAIN CURRENT
SINGLE PULSE 25°C
1000
SINGLE PULSE
DRAIN-SOURCE VOLTAGE (V))
1,000
SINGLE PULSE TIME (SEC)
Figure Maximum Safe Operating Area.
Figure Single Pulse Maximum Power Dissipation.
TRANSIENT THERMAL RESISTANCE
r(t), NORMALIZED EFFECTIVE
r(t) °C/W
0.05 P(pk)
0.05 0.03 0.02
0.02 0.01 Single Pulse
Duty Cycle,
1000
0.01 0.01
0.05
,TIME (ms)
Figure Transient Thermal Response Curve.
NDP7052L Rev.B1

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