CHANNEL 200V TO-251/TO-252 POWER TRANSISTOR TYPE STD5N20 DS(

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CHANNEL 200V TO-251/TO-252 POWER TRANSISTOR TYPE STD5N20 DS(

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STD5N20
CHANNEL 200V TO-251/TO-252 POWER TRANSISTOR
TYPE STD5N20
DS(on)
TYPICAL RDS(on) AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA 100oC GATE CHARGE HIGH CURRENT CAPABILITY 150oC OPERATING TEMPERATURE APPLICATION ORIENTED CHARACTERIZATION THROUGH-HOLE IPAK (TO-251) POWER PACKAGE TUBE (SUFFIX "-1") SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE TAPE REEL (SUFFIX "T4")
IPAK TO-251 (Suffix "-1")
DPAK TO-252
(Suffix "T4")
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SOLENOID RELAY DRIVERS DC-DC CONVERTERS DC-AC INVERTERS TELECOMMUNICATION POWER SUPPLIES INDUSTRIAL MOTOR DRIVES
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb Parameter Drain-source Voltage Drain- gate Voltage ate-source Voltage Drain Current (continuous) Drain Current (continuous) Drain Current (pulsed) otal Dissipation Derating Factor Storage emperature Max. Operating Junction Temperature
Value 0.36
Pulse width limited safe operating area
March 1999
1/10
STD5N20
THERMAL DATA
-case -amb thc-sink Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead Temperature Soldering Purpose 2.77
AVALANCHE CHARACTERISTICS
Symbo Parameter Avalanche Current, Repetitive Not-Repetitive (pulse width limited max,) Single Pulse Avalanche Energy (starting Value Unit
ELECTRICAL CHARACTERISTICS (Tcase unless otherwise specified)
Symbo (BR)DSS IGSS Parameter Drain-source Breakdown Voltage Test ditions Min. Typ. Max. Unit
Rating Zero Gate Voltage Drain Current Rating Gate-body Leakage Current (VDS
=125
Symbo GS(th) DS(on) Parameter Gate Threshold Voltage Static Drain-source Resistance State Drain Current Test ditions Min. Typ. Max. Unit
ID(o DS(on
DYNAMIC
Symbo Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test ditions ID(o DS(on Min. Typ. Max. Unit
2/10
STD5N20
ELECTRICAL CHARACTERISTICS (continued) SWITCHING
Symbo d(on) (di/dt) Parameter Turn-on Time Rise Time Turn-on Current Slope Test ditions (see test circuit, figure (see test circuit, figure Min. Typ. Max. Unit A/µs
Total Charge Gate-Source Charge Gate-Drain Charge
SWITCHING
Symbo (Voff) Parameter Off-voltage Rise Fall Cross-over Time Test ditions (see test circuit, figure Min. Typ. Max. Unit
SOURCE DRAIN DIODE
Symbo Parameter Source-drain Current Source-drain Current (pulsed) Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current 1125 12.5 di/dt A/µs (see test circuit, figure Test ditions Min. Typ. Max. Unit
Pulsed: Pulse duration duty cycle Pulse width limited safe operating area
Safe Operating Area
Thermal Impedance
3/10
STD5N20
Derating Curve Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source Resistance
Gate Charge Gate-source Voltage
4/10
STD5N20
Capacitance Variations Normalized Gate Threshold Voltage Temperature
Normalized Resistance Temperature
Turn-on Current Slope
Turn-off Drain-source Voltage Slope
Cross-over Time
5/10
STD5N20
Switching Safe Operating Area Accidental Overload Area
Source-drain Diode Forward Characteristics
Fig. Unclamped Inductive Load Test Circuit
Fig. Unclamped Inductive Waveform
6/10
STD5N20
Fig. Switching Times Test Circuits Resistive Load Fig. Gate Charge test Circuit
Fig. Test Circuit Inductive Load Switching DIode Recovery Times
7/10
STD5N20
TO-251 (IPAK) MECHANICAL DATA
DIM. MIN. 0.45 0.48 15.9 0.95 16.3 0.017 0.019 0.236 0.252 0.173 0.626 0.354 0.031 0.031 0.64 TYP. MAX. 0.85 0.012 0.037 0.023 0.023 0.244 0.260 0.181 0.641 0.370 0.047 0.039 MIN. 0.086 0.035 0.027 0.025 0.204 inch TYP. MAX. 0.094 0.043 0.051 0.031 0.212 0.033
0068771-E
8/10
STD5N20
TO-252 (DPAK) MECHANICAL DATA
MIN. 0.03 0.64 0.45 0.48 9.35 0.023 TYP. MAX. 0.23 10.1 MIN. 0.086 0.035 0.001 0.025 0.204 0.017 0.019 0.236 0.252 0.173 0.368 0.031 0.039 inch TYP. MAX. 0.094 0.043 0.009 0.035 0.212 0.023 0.023 0.244 0.260 0.181 0.397
DIM.
DETAIL
DETAIL
0068772-B
9/10
STD5N20
Information furnished believed accurate reliable. However, STMicroelect onics assumes responsibil consequences such information infringement patents other rights third partes which result from use. license granted implication otherwise under patent patent rights STMicroelectro nics. Specific ation mentioned this publication subjec change without notice. This publication supersedes replaces informaton previously supplied. STMicroelectronics products authorized critical components life support devices systems with express written approval STMicroelectronics. logo trademark STMicroelectronics 1999 STMicroelectronics Printed Italy Rights Reserved STMicroelectronics GROUP COMPANIES Australia Brazil Canada China France Germany Italy Japan Korea Malaysi Malta Mexico Morocco Netherlands Singapore Spain Sweden Switzerland Taiwan Thailand United Kingdom U.S.A.
10/10
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CHANNEL 200V TO-251/TO-252 POWER TRANSISTOR TYPE STD5N20 DS(

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