FREQUENCY AMPLIFIER TRANSISTOR *Collector-Emitter Voltage: BVCEO=
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2SA1015
FREQUENCY AMPLIFIER TRANSISTOR
*Collector-Emitter Voltage: BVCEO=-50V *Collector current 150mA *High linearity *Complement 2SC1815
TO-92
1:EMITTER 2:COLLECTOR BASE
ABSOLUTE MAXIMUM RATINGS Ta=25°C ,unless otherwise specified
PARAMETER
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector dissipation Collector current Base current Junction Temperature Storage Temperature
SYMBOL
VCBO VCEO VEBO TSTG
RATING
-150 +150
UNIT
ELECTRICAL CHARACTERISTICS(Ta=25°C,unless otherwise specified)
PARAMETER
Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current current gain(note) Collector-emitter saturation voltage Base-emitter saturation voltage Current gain bandwidth product Output capacitance Noise Figure
SYMBOL
BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat)
TEST CONDITIONS
Ic=-100µA,IE=0 Ic=-10mA,IB=0 IE=-10µA,Ic=0 VCB=-50V,IE=0 VEB=-5V,Ic=0 VCE=-6V,Ic=-2mA VCE=-6V,Ic=-150mA Ic=-100mA,IB=-10mA Ic=-100mA,IB=-10mA VCE=-10V,Ic=-1mA VCB=-10V,IE=0,f=1MHz Ic=-0.1mA,VCE=-6V RG=1k,f=100Hz
UNIT
-0.1
-100 -100 -0.3 -1.1
UNISONIC TECHNOLOGIES
QW-R201-004,B
2SA1015
RANK RANGE
120-240 200-400 350-700
CLASSIFICATION hFE1
TYPICAL CHARACTERISTIC CURVES
Fig.1 Static characteristics
Fig.2 current Gain
Fig.3 Base-Emitter Voltage
Ic,Collector current (mA)
Ic,Collector current (mA)
IB=-300
HFE, current Gain
VCE=-6V
VCE=-6V
IB=-250 IB=-200 IB=-150
IB=-100 IB=-50
-0.2 -0.4 -0.6 -0.8 -1.0
Collector-Emitter voltage
Ic,Collector current (mA)
Base-Emitter voltage
Fig.4 Saturation voltage
Fig.5 Current gain-bandwidth product
Fig.6 Collector output Capacitance
Cob,Capacitance (pF)
Ic=10*IB
Current Gain-bandwidth product,fT(MHz)
Saturation voltage
VCE=-6V
VBE(sat)
f=1MHz IE=0
VCE(sat)
Ic,Collector current (mA)
Ic,Collector current (mA)
Collector-Base voltage
UNISONIC TECHNOLOGIES
QW-R201-004,B
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