HBT131 TRIACS LOGIC LEVEL Description Passivated, sensi

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HBT131 TRIACS LOGIC LEVEL Description Passivated, sensi

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Spec. HA200209 Issued Date 2002.04.01 Revised Date 2002.04.15 Page
HBT131
TRIACS LOGIC LEVEL
Description
Passivated, sensitive gate triacs plastic envelope, intended general purpose bidirectional switching phase control applications. These devices intended interfaced directly microcontrollers, logic integrated circuits other power gate trigger circuits.
TO-92
Quick Reference Data
Symbol VDRM, VRRM IT(RMS) ITSM Parameter Repetitive peak off-state voltages on-state current Non-repetitive peak on-state current Max. Unit
Configuration
Gate Main Terminal Description Main Terminal
Symbol
Limtiing Values
Symbol VDRM, VRRM IT(RMS) Parameter Repetitive peak off-state voltages on-state current (full sine wave; Tlead51°C) Non-repetitive peak on-state current (full sine wave; Tj=25°C prior surge, t=20ms) Non-repetitive peak on-state current (full sine wave; Tj=25°C prior surge, t=16.7ms) fusing (t=10ms) Repetitive rate rise on-state current after triggering (ITM=1.5A; IG=0.2A; dIG/dt=0.2A/us; (ITM=1.5A; IG=0.2A; dIG/dt=0.2A/us; (ITM=1.5A; IG=0.2A; dIG/dt=0.2A/us; (ITM=1.5A; IG=0.2A; dIG/dt=0.2A/us; Peak gate current Peak gate voltage Peak gate power Average gate power (over 20ms period) Storage temperature Operating junction temperature Min. Max. 17.6 1.28 Units A/us A/us A/us A/us
ITSM
dIT/dt
PG(AV) Tstg
HBT131
HSMC Product Specification
Thermal Resistances
Symbol Parameter Conditions full cycle half cycle mounted; lead length=4mm Min.
Spec. HA200209 Issued Date 2002.04.01 Revised Date 2002.04.15 Page
Typ.
Max.
Unit
j-lead Thermal resistance junction lead Thermal resistance junction ambient
Static Characteristics (Tj=25°C, unless otherwise stated)
Symbol Parameter Gate Trigger Current Conditions VD=12V, IT=0.1A, VD=12V, IT=0.1A, GVD=12V, IT=0.1A, GVD=12V, IT=0.1A, VD=12V, IGT=0.1A, VD=12V, IGT=0.1A, GVD=12V, IGT=0.1A, GVD=12V, IGT=0.1A, VD=12V, IGT=0.1A IT=2A VD=12V, IT=0.1A VD=400V, IT=0.1A, Tj=125°C VD=VDRM Tj=125°C Min. Typ. Max. Unit
Latching Current Holding Current On-state Voltage Gate Trigger Voltage Off-state Leakage Current
Dynamic Characteristics (Tj=25°C, unless otherwise stated)
Symbol dVD/dt Parameter Critical rate rise off-state voltage Conditions Min. Typ. Max. Unit V/us VDM=67% VDRM(max); Tj=125°C exponential waveform; RGK=1k Gate controlled turn-on ITM=1.5A; VD=VDRM(max) time IG=0.1A; dIG/dt=5A/us
HBT131
HSMC Product Specification
Characteristics Curve
Normalised Gate Trigger Current IGT(Ta)/IGT(25 Versus Temperature
T2+/G+ T2-/GT2+/GT2-/G2.5
Spec. HA200209 Issued Date 2002.04.01 Revised Date 2002.04.15 Page
Typical Maximum On-State Characteristic
IGT/IGT(25
IT/A
VT/V
Normalised Gate Trigger Voltage VGT(Ta)/VGT(25 Versus Temperature
Normalised Holding Current IH(Ta)/IH(25 Versus Temperature
T2+/G+
T2-/G-
VGT/VGT(25
IL/IL(25
Ta/(
Normalised Latching Current IL(Ta)/IL(25 Versus Temperature
Maximum On-State Dissipation, Ptot Versus On-State Current, a=conduction angle
IL/IL(25
Ptot/w
IT(RMS)/A
HBT131
HSMC Product Specification
TO-92 Dimension
Date Code
Spec. HA200209 Issued Date 2002.04.01 Revised Date 2002.04.15 Page
Marking:
Control Code
Style: 1.main terminal 2.Gate 3.main terminal
3-Lead TO-92 Plastic Package HSMC Package Code:
Typical
Inches Min. Max. 0.1704 0.1902 0.1704 0.1902 0.5000 0.0142 0.0220 *0.0500 0.1323 0.1480
Millimeters Min. Max. 4.33 4.83 4.33 4.83 12.70 0.36 0.56 *1.27 3.36 3.76
Inches Min. Max. 0.0142 0.0220 *0.1000 *0.0500
Millimeters Min. Max. 0.36 0.56 *2.54 *1.27
Notes: 1.Dimension tolerance based Spec. dated Apr. 25,1996.
2.Controlling dimension: millimeters. 3.Maximum lead thickness includes lead finish thickness, minimum lead thickness minimum thickness base material. 4.If there question with packing specification packing method, please contact your local HSMC sales office.
Material:
Lead: Alloy; solder plating Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
rights reserved. Reproduction whole part prohibited without prior written approval HSMC. HSMC reserves right make changes products without notice. HSMC semiconductor products warranted suitable Life-Support Applications, systems. HSMC assumes liability consequence customer product design, infringement patents, application assistance.
Head Office Factory:
Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. Sec. Chung-Shan Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 Factory Kuang Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931
HBT131
HSMC Product Specification

HBT131 TRIACS LOGIC LEVEL Description Passivated, sensi

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