HIGH CURRENT SWITCHING APPLICATION 2SD1802 applies voltage regula
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2SD1802 EPITAXIAL PLANAR SILICON TRANSISTOR
HIGH CURRENT SWITCHING APPLICATION
2SD1802 applies voltage regulators, relay drivers, lamp drivers, electrical equipment.
FEATURES
*Adoption FBET, MBIT processes *Large current capacity wide *Low collector-to-emitter saturation voltage *Fast switching speed
TO-252
BASE
COLLECTOR
EMITTER
ABSOLUTE MAXIMUM RATINGS Ta=25°C ,unless otherwise specified
PARAMETER
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Power Dissipation Tc=25°C Collector Current(DC) Collector Current(PULSE) Junction Temperature Storage Temperature
SYMBOL
VCBO VCEO VEBO TSTG
VALUE
+150
UNIT
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
Collector Cutoff Current Emitter Cutoff Current Current Gain (note) Gain-Bandwidth Product Output Capacitance Saturation Voltage Saturation Voltage Breakdown Voltage Breakdown Voltage Breakdown Voltage Turn-on Time
SYMBOL
ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO
TEST CONDITIONS
VCB=40V,IE=0 VEB=4V,IC=0 VCE=2V, Ic=100mA VCE=2V, Ic=3A VCE=10V,IC=50mA VCB=10V,f=1MHz IC=2A,IB=100mA IC=2A,IB=100mA IC=10µA,IE=0 IC=1mA,RBE= IE=10µA,IC=0 test circuit
UNIT
0.19 0.94
UNISONIC TECHNOLOGIES
QW-R209-001,A
2SD1802 EPITAXIAL PLANAR SILICON TRANSISTOR
PARAMETER
Storage Time Fall Time
SYMBOL
tstg
TEST CONDITIONS
test circuit test circuit
UNIT
CLASSIFICATION hFE1
RANK RANGE 100-200 140-280 200-400 280-560
TEST CIRCUIT (Unit resistance capacitance
UNISONIC TECHNOLOGIES
QW-R209-001,A
2SD1802 EPITAXIAL PLANAR SILICON TRANSISTOR
UNISONIC TECHNOLOGIES
QW-R209-001,A
2SD1802 EPITAXIAL PLANAR SILICON TRANSISTOR
UNISONIC TECHNOLOGIES
QW-R209-001,A
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