HIGH CURRENT SWITCHIG APPLICATION 2SD1624 applies voltage regulat
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2SD1624 EPITAXIAL PLANAR SILICON TRANSISTOR
HIGH CURRENT SWITCHIG APPLICATION
2SD1624 applies voltage regulators, relay drivers, lamp drivers, electrical equipment.
FEATURES
*Adoption FBET, MBIT processes *Low collector-to-emitter saturation voltage *Fast switching speed. *Large current capacity wide ASO.
SOT-89
MARKING
1:EMITTER
COLLECTOR
BASE
ABSOLUTE MAXIMUM RATINGS Ta=25°C ,unless otherwise specified
PARAMETER
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Power Dissipation( Tc=25°C) Collector Current(DC) Collector Current(PULSE) Junction Temperature Storage Temperature
SYMBOL
VCBO VCEO VEBO TSTG
VALUE
+150
UNIT
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
Collector Cutoff Current Emitter Cutoff Current Current Gain (note) Gain-Bandwidth Product Output Capacitance Saturation Voltage Saturation Voltage Breakdown Voltage Breakdown Voltage Breakdown Voltage Turn-on Time
SYMBOL
ICBO IEBO VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO
TEST CONDITIONS
VCB=40V,IE=0 VEB=4V,IC=0 VCE=2V, Ic=100mA VCE=10V, IC=50mA VCE=10V,f=1MHz IC=2A,IB=100mA IC=2A,IB=100mA IC=10µA,IE=0 IC=1mA,RBE= IE=10µA,IC=0 test circuit
UNIT
0.19 0.94
UNISONIC TECHNOLOGIES
QW-R208-005,A
2SD1624 EPITAXIAL PLANAR SILICON TRANSISTOR
PARAMETER
Storage Time Fall Time
SYMBOL
tstg
TEST CONDITIONS
test circuit test circuit
UNIT
CLASSIFICATION
RANK RANGE 100-200 140-280 200-400 280-560
TEST CIRCUIT (Unit (resistance capacitance
UNISONIC TECHNOLOGIES
QW-R208-005,A
2SD1624 EPITAXIAL PLANAR SILICON TRANSISTOR
UNISONIC TECHNOLOGIES
QW-R208-005,A
2SD1624 EPITAXIAL PLANAR SILICON TRANSISTOR
UNISONIC TECHNOLOGIES
QW-R208-005,A
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