SILICON EPITAXIAL TRANSISTOR 2SA1020 designed power amplifier pow

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SILICON EPITAXIAL TRANSISTOR 2SA1020 designed power amplifier pow

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2SA1020
SILICON EPITAXIAL TRANSISTOR
2SA1020 designed power amplifier power switching applications.
FEATURES
*Low collector saturation voltage: VCE(sat)=-0.5V(max.) (IC=-1A) *High speed switching time: tstg=1.0µs(Typ.) *Complement 2SC2655
SOT-89
1:EMITTER
2:COLLECTOR
3:BASE
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
PARAMETER SYMBOL VALUE
+150
UNIT
Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Collector Current Collector Power Dissipation Collector Power Dissipation Junction Temperature Storage Temperature TSTG Mounted cermic substrate( 250mm2 0.8t
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
Collector cut-off current Emitter cut-off current Collector emitter breakdown voltage Current Gain Collector emitter saturation voltage Base emitter saturation voltage Transition frequency Collector output capacitance Switching time Turn-on time Storage time Fall time
SYMBOL
ICBO IEBO V(BR)CEO hFE1 hFE2 VCE(sat) VBE(sat) tstg
TEST CONDITIONS
VCB=-50V, IE=0 VEB=-5V, IC=0 Ic=-10mA, IB=0 VCE=-2V, IC=-0.5A VCE=-2V, IC=-1.5A Ic=-1A, IB=-0.05A Ic=-1A, IB=-0.05A VCE=-2V, Ic=-0.5A VCB=-10V, IE=0, f=1MHz
-1.0 -1.0
UNIT
-0.5 -1.2
UNISONIC TECHNOLOGIES
QW-R208-021,A
2SA1020
CLASSIFICATION hFE1
RANK RANGE
TYPICAL PERFORMANCE CHARACTERISTICS
VCE-IC Collector Emitter Voltage I(tot) -120 -160 -0.4 -0.2 -200 Collector Emitter Voltage -1.0 -0.8 -0.6 -1.0 -0.8 -0.6 -0.4 -0.2
VCE-IC
IB=-5mA
IB=-5mA
-40I(tot)
-120 -160 -180 -200
COMMON EMITTER Ta=25 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 -2.8 Collector Current Ic(A) VCE-IC
COMMON EMITTER Ta=100 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 -2.8 Collector Current Ic(A) hFE-Ic COMMON EMITTER VCE=-2V I(tot)
-1.0 Collector Emitter Voltage IB=-10mA -0.8 I(tot) -0.6 -0.4 -0.2 COMMON EMITTER Ta=-55 -0.8 -1.2 -1.6 -2.0 -2.4 -2.8 Collector Current Ic(A)
1000 Current Gain Ta=100
-120 -160 -200
-0.4
-0.005 -0.01
-0.3 -0.03 -0.1 Collector Current IC(A)
UNISONIC TECHNOLOGIES
QW-R208-021,A
2SA1020
Collector -Emitter Saturation Voltage VCE(sat) -0.5 -0.3
VCE(sat)-Ic Collector -Emitter Saturation Voltage VBE(sat) VCE(sat)-Ic COMMON EMITTER IC/IB=20 I(tot)
COMMON EMITTER IC/IB=20 I(tot) Ta=100
-0.1 -0.05 -0.03
-0.5 -0.3
Ta=100
-0.01 -0.005 -0.01
-0.3 -0.03 -0.1 Collector Current IC(A) -VBE
-0.1 -0.005 -0.01
-0.3 -0.03 -0.1 Collector Current IC(A) Pc-Ta
-2.0 Collector Current
Collector Power Dissipatoin Pc,(W)
COMMON EMITTER VCE=-2V I(tot)
Ambient Temperature 1.Mounted Ceramic Substrate (250mm2*0.8t) I(tot) 2.Ta=25
-1.5 Ta=100 -1.0
-0.5
-0.4 -1.6 -0.8 -1.2 Base Emitter Voltage VBE(V) Safe Operation Area
Collector Current -0.5 -0.3 -0.1 -0.05 -0.03 -0.01
max.(pulsed)* max.(pulsed)*
10ms* 1ms*
OPERATION Ta=25
*Single nonrepetitive pulse Ta=25 Curves must derated linearly with increase temperature
VCEO -100 -0.3 Collector Emitter Voltage
UNISONIC TECHNOLOGIES
QW-R208-021,A

SILICON EPITAXIAL TRANSISTOR 2SA1020 designed power amplifier pow

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