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S DU / D3055L2

S amHop Microelectronics C orp. Augus t , 2002

S DU / D3055L2
S amHop Microelectronics C orp. Augus t , 2002
N-C hannel E nhancement Mode Field E ffect Trans is tor
R DS (ON)
S uper high dense cell design for low R DS (ON ).
R ugged and reliable. TO-252 and TO-251 P ackage.
S DU S E R IE S TO-252AA(D-P AK)
S DD S E R IE S TO-251(l-P AK)
AB S OL UTE MAXIMUM R ATINGS
Thermal R esistance, Junction-to-C ase Thermal R esistance, Junction-to-Ambient
S DU / D3055L2
Parameter OFF CHAR ACTE R IS TICS
Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS
S ymbol
Condition
Min Typ C Max Unit
20 1 100 0.7 34 45 20 17 705 280 65 60 70 V uA nA V
m-ohm m-ohm
ON CHAR ACTE R IS TICS b
Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance
DYNAMIC CHAR ACTE R IS TICS c
S WITCHING CHAR ACTE R IS TICS
Turn-On Delay Time R ise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-S ource Charge Gate-Drain Charge
tD(ON) tr tD(OFF) tf Qg Q gs Q gd
S DU / D3055L 2
Parameter
Diode Forward Voltage
S ymbol
Condition
Min Typ Max Unit
0.72 1.2 V
DR AIN-SOUR CE DIODE CHAR ACTER ISTICS b
ID , Drain C urrent(A)
I D , Drain C urrent (A)
V DS , Drain-to-S ource Voltage (V )
V G S , G ate-to-S ource Voltage (V )
F igure 1. Output C har acter istics
R DS (ON) , On-R es is tance(Ohms ) (Normalized)
F igure 2. Tr ansfer C har acter istics
C , C apacitance (pF )
V DS , Drain-to S ource Voltage (V )
T j, J unction T emperature ( C )
F igure 3. C apacitance
F igure 4. On-R esistance Var iation with Temper ature
S DU / D3055L 2
B V DS S , Normalized Drain-S ource B reakdown V oltage
V th, Normalized G ate-S ource T hres hold V oltage
T j, J unction T emperature ( C )
F igur e 5. G ate T hr eshold V ar iation with T emper atur e
F igur e 6. B r eak down V oltage V ar iation with T emper atur e
gF S , T rans conductance (S )
Is , S ource-drain current (A)
I DS , Drain-S ource C urrent (A)
V S D , B ody Diode F orward V oltage (V )
F igur e 7. T r ansconductance V ar iation with Dr ain C ur r ent
I D , Drain C urrent (A)
F igur e 8. B ody Diode F or war d V oltage V ar iation with Sour ce C ur r ent
Qg, T otal G ate C harge (nC )
V DS , Drain-S ource V oltage (V )
F igur e 10. M aximum Safe O per ating A r ea
S DU / D3055L 2
V DD ton toff tr
td(on) V OUT
td(off)
P ULS E WIDTH
F igur e 11. Switching T est C ir cuit
F igur e 12. Switching W avefor ms
r(t), Normalized E ffective T ransient T hermal Impedance
0.2 0.1 0.1 0.05 0.02 S ingle P uls e 0.01 10
S quare Wave P uls e Duration (s ec)
F igur e 13. Nor malized T her mal T r ansient I mpedance C ur ve