amHop Microelectronics orp. Augus 2002 hannel nhancement Mode Fie

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amHop Microelectronics orp. Augus 2002 hannel nhancement Mode Fie

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DU/D3055L2
amHop Microelectronics orp. Augus 2002
hannel nhancement Mode Field ffect Trans
(ON)
uper high dense cell design
4.5V 2.5V
ugged reliable. TO-252 TO-251 ackage.
TO-252AA(D-P
TO-251(l-P
MAXIMUM ATINGS
arameter Drain-S ource Voltage Gate-S ource Voltage Drain urrent-C ontinuous =125 ulsed (300ms Pulse Width) Drain-S ource Diode Forward urrent Maximum ower Dissipation Operating Junction torage Temperature ange
unles otherwis noted)
ymbol Limit Unit
Thermal esistance, Junction-to-C Thermal esistance, Junction-to-Ambient
DU/D3055L2
ICAL CHAR ACTE TICS unless otherwise noted)
Parameter CHAR ACTE TICS
Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage (th) (ON) ID(ON) CRSS
ymbol
Condition
250uA 20V, 250uA =4.5V, 6.0A =2.5V, 5.2A 4.5V 10V, 6.0A
Unit
m-ohm m-ohm
CHAR ACTE TICS
Gate Threshold Voltage Drain-S ource On-S tate esistance On-S tate Drain Current Forward Transconductance
DYNAMIC CHAR ACTE TICS
Input Capacitance Output Capacitance everse Transfer Capacitance =8V, =1.0MH
WITCHING CHAR ACTE TICS
Turn-On Delay Time Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-S ource Charge Gate-Drain Charge
tD(ON) tD(OFF)
10V, 4.5V, =10V,ID =6A,V =10V =10V,ID =6A,V =4.5V =10V, =10V
11.5
DU/D3055L
ICAL CHAR ACTE TICS unles otherwis
Parameter
Diode Forward Voltage
ymbol
Condition
=1.7A
Unit
0.72
AIN-SOUR DIODE CHAR ACTER ISTICS
Notes urface Mounted Board, 10sec. b.Pulse Test:Pulse Width <=300us, Duty Cycle<= c.Guaranteed design, subject production testing.
3,4,10V
Drain urrent(A)
Drain urrent
j=125
Drain-to-S ource Voltage
ate-to-S ource Voltage
igure Output acter istics
(ON) On-R tance(Ohms (Normalized)
3000 2500
igure ansfer acter istics
=4.5V
apacitance
2000 1500 1000
Drain-to ource Voltage
unction emperature
igure apacitance
igure On-R esistance iation with Temper ature
DU/D3055L
1.06 1.03 1.00 0.97 0.94 0.91 =250uA
Normalized Drain-S ource reakdown oltage
Normalized ate-S ource hres hold oltage
1.09
1.15 1.10 1.05 1.00 0.95 0.90 0.85 =250uA
unction emperature
unction emperature
igur eshold iation with emper atur
igur down oltage iation with emper atur
rans conductance
=10V
ource-drain current
Drain-S ource urrent
Diode orward oltage
igur ansconductance iation with
Drain urrent
igur Diode oltage iation with Sour
ource oltage
=10V
0.03
=4.5V ingle ulse c=25
otal harge
Drain-S ource oltage
igur
igur aximum Safe ating
DU/D3055L
toff
td(on)
td(off)
INVE
WIDTH
igur Switching cuit
igur Switching avefor
r(t),Normalized ffective ransient hermal Impedance
Duty ycle=0.5
0.05 0.02 ingle 0.01
(t)=r Datas heet Duty ycle, D=t1/t2
quare Wave Duration
igur malized ansient mpedance

amHop Microelectronics orp. Augus 2002 hannel nhancement Mode Fie

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