500V 0.065 B2LL T-Max MOSFET Power generation loss
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APT50M65B2LL APT50M65LLL
500V 0.065
B2LL
T-Max
MOSFET
Power generation loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction switching losses addressed with Power significantly lowering RDS(ON) Power combines lower conduction switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. Lower Input Capacitance Lower Miller Capacitance Lower Gate Charge,
MAXIMUM RATINGS
Symbol VDSS VGSM TJ,TSTG Parameter Drain-Source Voltage Continuous Drain Current 25°C Pulsed Drain Current
TO-264
Increased Power Dissipation Easier Drive Popular T-MAXor TO-264 Package
Ratings: 25°C unless otherwise specified.
APT50M65B2LL_LLL UNIT Volts Amps
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation 25°C Linear Derating Factor Operating Storage Junction Temperature Range Lead Temperature: 0.063" from Case Sec. Avalanche Current
Volts Watts W/°C Amps
(Repetitive Non-Repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
3000
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic Test Conditions Drain-Source Breakdown Voltage (VGS 250µA) Drain-Source On-State Resistance
UNIT Volts
0.065 ±100
(VGS 10V, 33.5A)
Ohms Volts
12-2003 050-7012
Zero Gate Voltage Drain Current (VDS 500V, Zero Gate Voltage Drain Current (VDS 400V, 125°C) Gate-Source Leakage Current (VGS ±30V, Gate Threshold Voltage (VDS VGS, 2.5mA)
CAUTION: These Devices Sensitive Electrostatic Discharge. Proper Handling Procedures Should Followed.
Website http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol Ciss Coss Crss td(on) td(off) Eoff Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
APT50M65 B2LL
Test Conditions
250V 25°C RESISTIVE SWITCHING 250V 25°C INDUCTIVE SWITCHING 25°C 333V, 67A, INDUCTIVE SWITCHING 125°C 333V, 67A,
UNIT
7010 1390 1035 1556 1013
Gate-Source Charge Gate-Drain ("Miller Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy
SOURCE-DRAIN DIODE RATINGS CHARACTERISTICS
Symbol
Characteristic Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage
UNIT Amps Volts
17.0
(Body Diode) (VGS 67A)
Reverse Recovery Time -67A, S/dt 100A/µs) Reverse Recovery Charge -67A, S/dt 100A/µs) Peak Diode Recovery
V/ns
THERMAL CHARACTERISTICS
Symbol Characteristic Junction Case Junction Ambient UNIT °C/W
0.18
Repetitive Rating: Pulse width limited maximum junction temperature Pulse Test: Pulse width Duty Cycle MIL-STD-750 Method 3471
Starting +25°C, 1.34mH, Peak dv/dt numbers reflect limitations test circuit rather than device itself. -67A di/dt 700A/µs 500V 150°C includes diode reverse recovery. figures
Reserves right change, without notice, specifications information contained herein.
0.20
THERMAL IMPEDANCE (°C/W)
0.16 0.12 0.08 0.04 0.05 10-5 10-4 SINGLE PULSE Note:
Duty Factor t1/t2 Peak
050-7012
12-2003
10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE PULSE DURATION
Typical Performance Curves
MODEL
APT50M65B2LL
&10V
DRAIN CURRENT (AMPERES)
Junction temp. 0.0271 0.00899F
5.5V 6.5V
Power (Watts)
0.0656
0.0202F
0.0860 Case temperature
0.293F
FIGURE TRANSIENT THERMAL IMPEDANCE MODEL
DRAIN CURRENT (AMPERES) RDS(ON), DRAIN-TO-SOURCE RESISTANCE
VDS> (ON) (ON)MAX. 250µSEC. PULSE TEST <0.5 DUTY CYCLE
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE VOLTAGE OUTPUT CHARACTERISTICS
NORMALIZED 33.5A
1.00 0.90 0.80 VGS=10V VGS=20V
+125°C +25°C -55°C VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE TRANSFER CHARACTERISTICS
DRAIN CURRENT (AMPERES) FIGURE RDS(ON) DRAIN CURRENT
BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED)
1.15 1.10
DRAIN CURRENT (AMPERES)
1.05
1.00
0.95
0.90 0.85
CASE TEMPERATURE (°C) FIGURE MAXIMUM DRAIN CURRENT CASE TEMPERATURE
RDS(ON), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED)
JUNCTION TEMPERATURE (°C) FIGURE BREAKDOWN VOLTAGE TEMPERATURE
33.5A
VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
JUNCTION TEMPERATURE (°C) FIGURE ON-RESISTANCE TEMPERATURE
CASE TEMPERATURE (°C) FIGURE THRESHOLD VOLTAGE TEMPERATURE
050-7012
12-2003
APT50M65B2LL
DRAIN CURRENT (AMPERES)
OPERATION HERE LIMITED (ON)
30,000 10,000
CAPACITANCE (pF)
Ciss
100µS
1,000
Coss
=+25°C =+150°C SINGLE PULSE VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE MAXIMUM SAFE OPERATING AREA 10mS
Crss
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11,CAPACITANCE DRAIN-TO-SOURCE VOLTAGE
IDR, REVERSE DRAIN CURRENT (AMPERES)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
=+150°C =+25°C
VDS=100V VDS=250V
VDS=400V
TOTAL GATE CHARGE (nC) FIGURE GATE CHARGES GATE-TO-SOURCE VOLTAGE
td(on) td(off) (ns)
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE SOURCE-DRAIN DIODE FORWARD VOLTAGE
333V
td(off)
125°C
100µH
125°C
(ns)
333V
100µH
td(on)
FIGURE DELAY TIMES CURRENT 3000
FIGURE RISE FALL TIMES CURRENT 5000
333V
333V
2500
SWITCHING ENERGY (µJ)
125°C
Eoff
SWITCHING ENERGY (µJ)
100µH
4000
125°C 100µH includes diode reverse recovery.
2000
includes diode reverse recovery.
3000
1500
2000
12-2003
1000 Eoff
1000
050-7012
GATE RESISTANCE (Ohms) FIGURE SWITCHING ENERGY GATE RESISTANCE
FIGURE SWITCHING ENERGY CURRENT
Typical Performance Curves
Gate Voltage
APT50M65B2LL
Gate Voltage
td(on)
Drain Current
td(off)
Drain Voltage
Switching Energy Drain Voltage Switching Energy
Drain Current
Figure Turn-on Switching Waveforms Definitions
Figure Turn-off Switching Waveforms Definitions
APT60DF60
D.U.T.
Figure Inductive Switching Test Circuit
T-MAX® (B2) Package Outline
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
TO-264 Package Outline
4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 19.51 (.768) 20.50 (.807) 3.10 (.122) 3.48 (.137) 5.79 (.228) 6.20 (.244)
Drain
20.80 (.819) 21.46 (.845)
Drain
25.48 (1.003) 26.49 (1.043)
4.50 (.177) Max. 0.40 (.016) 0.79 (.031)
2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 2.29 (.090) 2.69 (.106) 19.81 (.780) 21.39 (.842)
2.29 (.090) 2.69 (.106)
1.01 (.040) 1.40 (.055)
Gate Drain Source
0.48 (.019) 0.84 (.033) 2.59 (.102) 3.00 (.118)
Gate Drain Source
2.21 (.087) 2.59 (.102)
5.45 (.215) 2-Plcs.
These dimensions equal TO-247 without mounting hole. Dimensions Millimeters (Inches)
5.45 (.215) 2-Plcs.
Dimensions Millimeters (Inches)
APT's products covered more U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 foreign patents. Foreign patents pending. Rights Reserved.
050-7012
0.76 (.030) 1.30 (.051) 2.79 (.110) 3.18 (.125)
12-2003
19.81 (.780) 20.32 (.800)
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