500V 0.050 FREDFET TO-264 Power generation loss, high v

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500V 0.050 FREDFET TO-264 Power generation loss, high v

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APT50M50L2FLL
500V 0.050
FREDFET
TO-264
Power generation loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction switching losses addressed with Power significantly lowering RDS(ON) Power combines lower conduction switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. Lower Input Capacitance Lower Miller Capacitance Lower Gate Charge,
MAXIMUM RATINGS
Symbol VDSS VGSM TJ,TSTG Parameter Drain-Source Voltage Continuous Drain Current 25°C Pulsed Drain Current
Increased Power Dissipation Easier Drive Popular TO-264 Package FAST RECOVERY BODY DIODE
Ratings: 25°C unless otherwise specified.
APT50M50L2LL UNIT Volts Amps
7.14
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation 25°C Linear Derating Factor Operating Storage Junction Temperature Range Lead Temperature: 0.063" from Case Sec. Avalanche Current
Volts Watts W/°C Amps
(Repetitive Non-Repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
3200
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic Test Conditions Drain-Source Breakdown Voltage (VGS 250µA) Drain-Source On-State Resistance
UNIT Volts
0.050 1000 ±100
(VGS 10V, 44.5A)
Ohms Volts
050-7115 2-2004
Zero Gate Voltage Drain Current (VDS 500V, Zero Gate Voltage Drain Current (VDS 400V, 125°C) Gate-Source Leakage Current (VGS ±30V, Gate Threshold Voltage (VDS VGS, 5mA)
CAUTION: These Devices Sensitive Electrostatic Discharge. Proper Handling Procedures Should Followed.
Website http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol Ciss Coss td(on) td(off) Eoff Eoff Symbol
APT50M50L2FLL
Test Conditions
250V 25°C RESISTIVE SWITCHING 250V 25°C INDUCTIVE SWITCHING 25°C 333V, 89A, INDUCTIVE SWITCHING 125°C 333V 89A,
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
UNIT
10550 2060 1490 1650 2105 1835
Gate-Source Charge Gate-Drain ("Miller Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Characteristic Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage Peak Diode Recovery
SOURCE-DRAIN DIODE RATINGS CHARACTERISTICS
UNIT Amps Volts V/ns
25°C 125°C 25°C 125°C 25°C 125°C
(Body Diode) (VGS -89A)
Reverse Recovery Time -89A, di/dt 100A/µs) Reverse Recovery Charge -89A, di/dt 100A/µs) Peak Recovery Current -89A, di/dt 100A/µs) Characteristic Junction Case Junction Ambient
IRRM
Amps
THERMAL CHARACTERISTICS
Symbol UNIT °C/W
0.14
Starting +25°C, 0.81mH, Peak dv/dt numbers reflect limitations test circuit rather than device itself. -89A di/dt 700A/µs 500V 150°C includes diode reverse recovery. figures
Repetitive Rating: Pulse width limited maximum junction temperature Pulse Test: Pulse width Duty Cycle MIL-STD-750 Method 3471
0.16
THERMAL IMPEDANCE (°C/W)
Reserves right change, without notice, specifications information contained herein.
0.14 0.12 0.10 0.08 0.06 0.04 0.02 10-5 0.05 10-4 SINGLE PULSE
Note:
Duty Factor t1/t2 Peak
050-7115 2-2004
10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE PULSE DURATION
Typical Performance Curves
DRAIN CURRENT (AMPERES)
APT50M50L2FLL
&10V 7.5V
MODEL Junction temp. (°C) 0.0622 Power (watts) 0.0778 Case temperature. (°C) 0.209F 0.0191F
6.5V
5.5V
RDS(ON), DRAIN-TO-SOURCE RESISTANCE
FIGURE TRANSIENT THERMAL IMPEDANCE MODEL
DRAIN CURRENT (AMPERES)
VDS> (ON) RDS(ON) MAX. 250µSEC. PULSE TEST <0.5 DUTY CYCLE
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE VOLTAGE OUTPUT CHARACTERISTICS
NORMALIZED 44.5A
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE TRANSFER CHARACTERISTICS -55°C +125°C +25°C
VGS=10V VGS=20V DRAIN CURRENT (AMPERES) FIGURE RDS(ON) DRAIN CURRENT
1.15
BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED)
DRAIN CURRENT (AMPERES)
1.10
1.05
1.00
0.95
0.90 0.85
RDS(ON), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED)
CASE TEMPERATURE (°C) FIGURE MAXIMUM DRAIN CURRENT CASE TEMPERATURE
44.5A
JUNCTION TEMPERATURE (°C) FIGURE BREAKDOWN VOLTAGE TEMPERATURE
VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
050-7115 2-2004
JUNCTION TEMPERATURE (°C) FIGURE RDS(ON) TEMPERATURE
CASE TEMPERATURE (°C) FIGURE THRESHOLD VOLTAGE TEMPERATURE
APT50M50L2FLL
OPERATION HERE LIMITED (ON)
30,000 10,000
CAPACITANCE (pF)
Ciss
DRAIN CURRENT (AMPERES)
100µS Coss 1,000
10mS
Crss
=+25°C =+150°C SINGLE PULSE
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE MAXIMUM SAFE OPERATING AREA
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11,CAPACITANCE DRAIN-TO-SOURCE VOLTAGE
IDR, REVERSE DRAIN CURRENT (AMPERES)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
=+150°C =+25°C
VDS=100V VDS=250V VDS=400V
TOTAL GATE CHARGE (nC) FIGURE GATE CHARGE GATE-TO-SOURCE VOLTAGE
td(on) td(off) (ns)
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE SOURCE-DRAIN DIODE FORWARD VOLTAGE
333V
td(off)
125°C
100µH
333V
(ns)
125°C
100µH
td(on)
FIGURE RISE FALL TIMES CURRENT 9000
FIGURE DELAY TIMES CURRENT
4000 3500
SWITCHING ENERGY (µJ)
333V
333V
8000
SWITCHING ENERGY (µJ)
125°C
125°C
3000 2500 2000 1500 1000
100µH includes diode reverse recovery.
7000 6000 5000 4000 3000 2000 1000
Eoff
100µH includes diode reverse recovery.
050-7115 2-2004
Eoff
FIGURE SWITCHING ENERGY CURRENT
GATE RESISTANCE (Ohms) FIGURE SWITCHING ENERGY GATE RESISTANCE
Typical Performance Curves
APT50M50L2FLL
Gate Voltage
Gate Voltage
td(on)
d(off)
Drain Voltage
Drain Current
Drain Voltage
Switching Energy Drain Current
Switching Energy
Figure Turn-on Switching Waveforms Definitions
Figure Turn-off Switching Waveforms Definitions
APT60DF60
D.U.T.
Figure Inductive Switching Test Circuit
TO-264 MAXTM(L2) Package Outline
4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 19.51 (.768) 20.50 (.807)
5.79 (.228) 6.20 (.244)
Drain
25.48 (1.003) 26.49 (1.043)
2.29 (.090) 2.69 (.106) 19.81 (.780) 21.39 (.842)
2.29 (.090) 2.69 (.106)
0.48 (.019) 0.84 (.033) 2.59 (.102) 3.00 (.118)
0.76 (.030) 1.30 (.051) 2.79 (.110) 3.18 (.125) 5.45 (.215) 2-Plcs.
Dimensions Millimeters (Inches)
APT's products covered more U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 foreign patents. Foreign patents pending. Rights Reserved.
050-7115 2-2004
Gate Drain Source

500V 0.050 FREDFET TO-264 Power generation loss, high v

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