amHop Microelectronics orp. Augus 2002 hannel nhancement Mode Fie

The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers.

amHop Microelectronics orp. Augus 2002 hannel nhancement Mode Fie

Datasheet Thumbnail

Top Searches for this datasheet

DU/D9916
amHop Microelectronics orp. Augus 2002
hannel nhancement Mode Field ffect Transistor
(ON)
uper high dense cell design
4.5V 2.7V
ugged reliable. TO-252 TO-251 ackage.
TO-252AA(D-P
TO-251(l-P
OLUTE MAXIMUM ATINGS A=25 unless otherwise noted)
arameter Drain-S ource Voltage Gate-S ource Voltage Drain urrent-C ontinuous ulsed
ymbol TJ=125
Limit
Unit
Drain-S ource Diode Forward urrent Maximum ower Dissipation Tc=25 Derate above Operating torage Temperature ange
Thermal esistance, Junction-to-C Thermal esistance, Junction-to-Ambient
DU/D9916
ICAL CHAR ACTE TICS unless otherwise noted)
Parameter CHAR ACTE TICS
Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage (th) (ON) ID(ON)
ymbol
Condition
250uA 20V, 250uA =4.5V, 6.0A =2.5V, 5.2A 4.5V 10V, 6.0A
Unit
CHAR ACTE TICS
Gate Threshold Voltage Drain-S ource On-S tate esistance On-S tate Drain Current Forward Transconductance
DYNAMIC CHAR ACTE TICS
Input Capacitance Output Capacitance everse Transfer Capacitance
CRSS
=10V, =1.0MH
WITCHING CHAR ACTE TICS
Turn-On Delay Time Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-S ource Charge Gate-Drain Charge
tD(ON) tD(OFF)
10V, 4.5V, =10V, =4.5V
11.5
DU/D9916
ICAL CHAR ACTE TICS A=25 unless otherwise noted)
Parameter
Diode Forward Voltage
ymbol
Condition
=1.7A
Unit
0.72
AIN-S DIODE CHAR ACTE TICS
Notes urface Mounted Board, 10sec. b.Pulse Test:Pulse Width 300us, Duty Cycle c.Guaranteed design, subject production testing.
=10,9,8,7,6,5,4V
Drain urrent(A)
Drain urrent
j=125
Drain-to-S ource Voltage
ate-to-S ource Voltage
igure Output haracteris tics
(ON) On-R tance(Ohms (Normalized)
1800 1500
igure Trans haracteris tics
=4.5V
apacitance
1200
Drain-to ource Voltage
unction emperature
igure apacitance
igure On-R tance Variation with Temperature
DU/D9916
1.06 1.03 1.00 0.97 0.94 0.91 =250uA
Normalized Drain-S ource reakdown oltage
Normalized ate-S ource hres hold oltage
1.09
1.15 1.10 1.05 1.00 0.95 0.90 0.85 =250uA
unction emperature
unction emperature
igure hres hold ariation with emperature
igure reakdown oltage ariation with emperature
rans conductance
=10V
ource-drain current
Drain-S ource urrent
Diode orward oltage
igure rans conductance ariation with Drain urrent
Drain urrent
igure Diode orward oltage ariation with ource urrent
ource oltage
=10V =10A
=4.5V ingle ulse c=25
otal harge
Drain-S ource oltage
igure harge
igure Maximum perating Area
DU/D9916
toff
td(on)
td(off)
INVE
WIDTH
igure witching ircuit
igure witching Waveforms
r(t),Normalized ffective ransient hermal Impedance
D=0.5
0.05 0.02 0.01 0.01
(t)=r Datas heet Duty ycle, D=t1/t2
quare Wave Duration
igure Normalized hermal rans ient Impedance urve

amHop Microelectronics orp. Augus 2002 hannel nhancement Mode Fie

Top Searches for this datasheet

Other recent searches