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Current Gain Plastic High Power Silicon Transistor designed
Top Searches for this datasheet*Pulse Test: Pulse Width Duty Cycle 2.0. Current Gain Plastic High Power Silicon Transistor designed Watt audio amplifiers utilizing complementary quasi complementary circuits. ELECTRICAL CHARACTERISTICS 25_C unless otherwise noted) THERMAL CHARACTERISTICS MAXIMUM RATINGS Semiconductort March, 2001 Rev. Semiconductor Components Industries, LLC, 2001 Current-Gain Bandwidth Product 0.25 Adc, Vdc, MHz) Base-Emitter Voltage* Adc, Vdc) Collector-Emitter Saturation Voltage* Adc, Adc) Current Gain Emitter Cutoff Current (VBE Vdc, Collector Cutoff Current (VCB Vdc, Collector-Emitter Sustaining Voltage* 0.05 Adc, Thermal Resistance, Junction Case Operating Storage Junction Temperature Range Total Device Dissipation 25_C Derate above 25_C Base Current Collector Current Emitter-Base Voltage Collector-Base Voltage Collector-Emitter Voltage (Min) BD802 complementary with 795, 797, 799, Characteristic Rating Characteristic Symbol Tstg Symbol VCBO VCEO VEBO +150 Value 1.92 Symbol VCE(sat) VBE(on) BVCEO ICBO IEBO Watts mW/_C Unit _C/W Unit AMPERE POWER TRANSISTORS SILICON VOLTS WATTS Publication Order Number: BD802/D BD802 CASE 221A-09 TO-220AB mAdc mAdc Unit BD802 150°C COLLECTOR CURRENT (AMP) Safe Operating Area Curves indicate limits below which device will enter secondary breakdown. Collector load lines specific circuits must fall within applicable Safe Area avoid causing catastrophic failure. insure operation below maximum power-temperature derating must observed both steady state pulse power conditions. 0.05 BD802 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure Active Region Safe Operating Area COLLECTOR-EMITTER VOLTAGE (VOLTS) 0.05 0.07 25°C BASE CURRENT (mA) Figure Collector Saturation Region NORMALIZED CURRENT GAIN 0.01 0.02 0.03 0.05 COLLECTOR CURRENT (AMPS) 150°C -55°C VOLTAGE (VOLTS) VBE(sat) IC/IB 25°C VCE(sat) IC/IB 0.01 0.02 0.03 COLLECTOR CURRENT (AMPS) Figure Normalized Current Gain Figure "On" Voltage http://onsemi.com BD802 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 0.05 0.01 (SINGLE PULSE) 0.03 0.02 0.01 0.01 0.02 0.03 0.05 0.07 TIME PULSE WIDTH (ms) 1000 Figure Thermal Response http://onsemi.com BD802 PACKAGE DIMENSIONS TO-220AB CASE 221A-09 ISSUE NOTES: DIMENSIONING TOLERANCING ANSI Y14.5M, 1982. CONTROLLING DIMENSION: INCH. DIMENSION DEFINES ZONE WHERE BODY LEAD IRREGULARITIES ALLOWED. INCHES 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 -0.080 MILLIMETERS 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 -2.04 SEATING PLANE Semiconductor trademarks Semiconductor Components Industries, (SCILLC). SCILLC reserves right make changes without further notice products herein. SCILLC makes warranty, representation guarantee regarding suitability products particular purpose, does SCILLC assume liability arising application product circuit, specifically disclaims liability, including without limitation special, consequential incidental damages. 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