AOU460 uses advanced trench technology design provide excellent RDS(ON

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AOU460 uses advanced trench technology design provide excellent RDS(ON

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AOU460 N-Channel Enhancement Mode Field Effect Transistor
AOU460 uses advanced trench technology design provide excellent RDS(ON) with gate charge. This device suitable PWM, load switching general purpose applications. Standard Product AOU460 Pb-free (meets ROHS Sony specifications). AOU460L Green Product ordering option. AOU460 AOU460L electrically identical.
TO-251
Features
(VGS 10V) RDS(ON) (VGS 10V) RDS(ON) (VGS 4.5V)
View Drain Connected
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current
Maximum
Units
TC=25°C TC=100°C TSTG TC=25°C
Repetitive avalanche energy 0.1mH Power Dissipation TC=100°C
Junction Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Case
Steady-State Steady-State
Symbol
Units °C/W °C/W
Alpha Omega Semiconductor, Ltd.
AOU460
Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions ID=250uA, VGS=0V VDS=20V, VGS=0V TJ=55°C VDS=0V, VGS=±20V VDS=VGS, ID=250µA VGS=10V, VDS=5V VGS=10V, ID=20A RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=20A Forward Transconductance VDS=5V, ID=20A IS=1A, VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current TJ=125°C 17.7 18.9 0.74 VGS=0V, VDS=12.5V, f=1MHz VGS=0V, VDS=0V, f=1MHz 0.93 15.3 VGS=10V, VDS=12.5V, ID=20A VGS=10V, VDS=12.5V, RL=0.625, RGEN=3 IF=20A, dI/dt=100A/µs 11.7 23.5 12.8 1000 0.01 Units
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage state drain current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge tD(on) tD(off) Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time
Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs
value measured with device still environment with =25°C. power dissipation based J(MAX)=175°C, using junction-to-case thermal resistance, more useful setting upper dissipation limit cases where additional heatsinking used. Repetitive rating, pulse width limited junction temperature J(MAX)=175°C. thermal impedence from junction case case ambient. static characteristics Figures obtained using <300 pulses, duty cycle 0.5% max. These curves based junction-to-case thermal impedence which measured with device mounted large heatsink, assuming maximum junction temperature J(MAX)=175°C. maximum current rating limited bond-wires.
THIS PRODUCT BEEN DESIGNED QUALIFIED CONSUMER MARKET. APPLICATIONS USES CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS AUTHORIZED. DOES ASSUME LIABILITY ARISING SUCH APPLICATIONS USES PRODUCTS. RESERVES RIGHT IMPROVE PRODUCT DESIGN, FUNCTIONS RELIABILITY WITHOUT NOTICE Rev0:July2005
Alpha Omega Semiconductor, Ltd.
AOU460
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
4.5V ID(A) 25°C VGS=3V (Volts) On-Region Characteristics VGS(Volts) Figure Transfer Characteristics 125°C VDS=5V
VGS=4.5V RDS(ON)
Normalized On-Resistance VGS=10V,
VGS=4.5V,20A
VGS=10V
Temperature (°C) Figure On-Resistance Junction Temperature Figure On-Resistance Drain Current Gate Voltage
25°C 2.00 4.00 6.00 8.00 10.00 (Volts) Figure On-Resistance Gate-Source Voltage ID=20A
1.0E+02 1.0E+01 1.0E+00 125°C
RDS(ON)
1.0E-01 1.0E-02 25°C 1.0E-03 1.0E-04 1.0E-05 (Volts) Figure Body-Diode Characteristics
125°C
Alpha Omega Semiconductor, Ltd.
AOU460
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
VDS=12.5V ID=20A 1400 1200 Capacitance (pF) 1000 Crss (nC) Figure Gate-Charge Characteristics RDS(ON) limited (Amps) 10µs 100µs Power TJ(Max)=175°C, TA=25°C (Volts) Figure Maximum Forward Biased Safe Operating Area (Note 0.0001 0.001 0.01 Pulse Width Figure Single Pulse Power Rating Junction-toCase (Note TJ(Max)=175°C TA=25°C (Volts) Figure Capacitance Characteristics Coss Ciss
(Volts)
Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TC+PDM.ZJC.RJC RJC=5°C/W
descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.01
Single Pulse 0.00001 0.0001
0.001
0.01
Pulse Width Figure Normalized Maximum Transient Thermal Impedance (Note
Alpha Omega Semiconductor, Ltd.
AOU460
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
ID(A), Peak Avalanche Current 0.00001 0.0001 0.001 Time avalanche, Figure Single Pulse Avalanche capability TA=25°C
Power Dissipation
TCASE (°C) Figure Power De-rating (Note
Current rating ID(A) TCASE (°C) Figure Current De-rating (Note
Alpha Omega Semiconductor, Ltd.

AOU460 uses advanced trench technology design provide excellent RDS(ON

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