AOU456 uses advanced trench technology design provide excellent RDS(ON

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AOU456 uses advanced trench technology design provide excellent RDS(ON

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AOU456 N-Channel Enhancement Mode Field Effect Transistor
AOU456 uses advanced trench technology design provide excellent RDS(ON) with gate charge. This device suitable PWM, load switching general purpose applications. Standard Product AOU456 Pb-free (meets ROHS Sony specifications). AOU456L Green Product ordering option. AOU456 AOU456L electrically identical.
TO-251
Features
(VGS 10V) RDS(ON) (VGS 10V) RDS(ON) (VGS 4.5V)
View Drain Connected
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current
Maximum
Units
TC=25°C TC=100°C TSTG TC=25°C
Repetitive avalanche energy L=0.1mH Power Dissipation TC=100°C
Junction Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Case
Steady-State Steady-State
Symbol
Units °C/W °C/W
Alpha Omega Semiconductor, Ltd.
AOU456
Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions ID=250uA, VGS=0V VDS=20V, VGS=0V TJ=55°C VDS=0V, VGS=±20V VDS=VGS, ID=250µA VGS=10V, VDS=5V VGS=10V, ID=20A TJ=125°C VGS=4.5V, ID=20A Forward Transconductance VDS=5V, ID=20A Diode Forward Voltage IS=1A, VGS=0V Maximum Body-Diode Continuous Current 0.74 1850 VGS=0V, VDS=12.5V, f=1MHz VGS=0V, VDS=0V, f=1MHz 0.86 31.7 VGS=10V, VDS=12.5V, ID=20A 15.7 VGS=10V, VDS=12.5V, RL=0.625, RGEN=3 IF=20A, dI/dt=100A/µs 11.5 30.9 20.3 2220 1.74 0.01 Units
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage state drain current Static Drain-Source On-Resistance
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge tD(on) tD(off) Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs
value measured with device still environment with =25°C. power dissipation based J(MAX)=175°C, using junction-to-case thermal resistance, more useful setting upper dissipation limit cases where additional heatsinking used. Repetitive rating, pulse width limited junction temperature J(MAX)=175°C. thermal impedence from junction case case ambient. static characteristics Figures obtained using <300 pulses, duty cycle 0.5% max. These curves based junction-to-case thermal impedence which measured with device mounted large heatsink, assuming maximum junction temperature J(MAX)=175°C. maximum current rating limited bond-wires. Rev1: August 2005
THIS PRODUCT BEEN DESIGNED QUALIFIED CONSUMER MARKET. APPLICATIONS USES CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS AUTHORIZED. DOES ASSUME LIABILITY ARISING SUCH APPLICATIONS USES PRODUCTS. RESERVES RIGHT IMPROVE PRODUCT DESIGN, FUNCTIONS RELIABILITY WITHOUT NOTICE.
Alpha Omega Semiconductor, Ltd.
AOU456
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
4.5V (Volts) On-Region Characteristics VGS=3.5 VGS(Volts) Figure Transfer Characteristics ID(A) 4.0V 125°C 25°C VDS=5V
4.63
Normalized On-Resistance
RDS(ON) VGS=4.5V VGS=10V
VGS=10V,
VGS=4.5V,
Figure On-Resistance Drain Current Gate Voltage
Temperature (°C) Figure On-Resistance Junction Temperature
ID=20A RDS(ON)
0.01 125°C 0.001 0.0001 0.00001 25°C 125°C
25°C
THIS PRODUCT BEEN DESIGNED QUALIFIED CONSUMER MARKET. APPLICATIONS (Volts) Figure On-Resistance WITHOUT NOTICE. FUNCTIONS RELIABILITYvs. Gate-Source Voltage (Volts) Figure Body-Diode Characteristics
Alpha Omega Semiconductor, Ltd.
AOU456
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
(Volts) (nC) Figure Gate-Charge Characteristics VDS=12.5V ID=20A Capacitance (pF) 3000 2500 Ciss 2000 1500 1000 Crss (Volts) Figure Capacitance Characteristics Coss
4.63
1000 TJ(Max)=175°C, TA=25°C (Amps) RDS(ON) limited 10µs Power 100µs
0.0001
TJ(Max)=175°C TA=25°C
(Volts) Figure Maximum Forward Biased Safe Operating Area (Note
0.001
0.01
Pulse Width Figure Single Pulse Power Rating Junction-toCase (Note
Normalized Transient Thermal Resistance
D=Ton/T TJ,PK=TC+PDM.ZJC.RJC RJC=3°C/W
descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Single Pulse
THIS PRODUCT BEEN DESIGNED QUALIFIED CONSUMER MARKET. APPLICATIONS 0.01
0.00001 0.0001 0.001 0.01 Pulse Width FUNCTIONS RELIABILITY WITHOUT NOTICE. Figure Normalized Maximum Transient Thermal Impedance (Note
Alpha Omega Semiconductor, Ltd.
AOU456
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
ID(A), Peak Avalanche Current 0.000001 0.00001 0.0001 0.001 Time avalanche, Figure Single Pulse Avalanche capability Power Dissipation
4.63
TCASE (°C) Figure Power De-rating (Note
TA=25°C
Current rating ID(A) TCASE (°C) Figure Current De-rating (Note
Alpha Omega Semiconductor, Ltd.

AOU456 uses advanced trench technology design provide excellent RDS(ON

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