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AOU454 N-Channel Enhancement Mode Field Effect Transistor

TO-251 D

AOU454 N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOU454 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard Product AOU454 is Pb-free (meets ROHS & Sony 259 specifications). AOU454L is a Green Product ordering option. AOU454 and AOU454L are electrically identical.
TO-251 D
Features
Top View Drain Connected to Tab
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Case B
Steady-State Steady-State
Symbol RJA RJC
Max 60 7.5
Alpha & Omega Semiconductor, Ltd.
AOU454
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AOU454
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1.0E+01 1.0E+00 1.0E-01 1.0E-02 1.0E-03 1.0E-04 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics 25°C 125°C
Alpha & Omega Semiconductor, Ltd.
AOU454
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
8 VGS (Volts)
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
PD Ton Single Pulse
0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
AOU454
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
Power Dissipation (W) 175
14 12 Current rating ID(A) 10 8 6 4 2 0 0 25 50 75 100 125 150 TCASE (°C) Figure 14: Current De-rating (Note B)
Alpha & Omega Semiconductor, Ltd.