AOU452 uses advanced trench technology design provide excellent RDS(ON

The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers.

AOU452 uses advanced trench technology design provide excellent RDS(ON

Datasheet Thumbnail

Top Searches for this datasheet

AOU452 N-Channel Enhancement Mode Field Effect Transistor
AOU452 uses advanced trench technology design provide excellent RDS(ON) with gate charge. This device suitable PWM, load switching general purpose applications. Standard Product AOU452 Pb-free (meets ROHS Sony specifications). AOU452L Green Product ordering option. AOU452 AOU452L electrically identical.
TO-251
Features
=25V (VGS 10V) RDS(ON) (VGS 10V) RDS(ON) (VGS 4.5V)
View Drain Connected
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current
Maximum
Units
TC=25°C TC=100°C TSTG TC=25°C
Repetitive avalanche energy L=0.1mH Power Dissipation TC=100°C
Junction Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Case
Steady-State Steady-State
Symbol
Units °C/W °C/W
Alpha Omega Semiconductor, Ltd.
AOU452
Electrical Characteristics J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage state drain current Static Drain-Source On-Resistance VGS=4.5V, ID=20A Forward Transconductance VDS=5V, ID=10A Diode Forward Voltage IS=1A, VGS=0V Maximum Body-Diode Continuous Current Conditions ID=250uA, VGS=0V VDS=20V, VGS=0V TJ=55°C VDS=0V, VGS=±20V VDS=VGS, ID=250µA VGS=10V, VDS=5V VGS=10V, ID=20A TJ=125°C 0.72 1230 VGS=0V, VDS=12.5V, f=1MHz VGS=0V, VDS=0V, f=1MHz 26.4 VGS=10V, VDS=12.5V, ID=20A 13.5 7.75 VGS=10V, VDS=12.5V, RL=0.6, RGEN=3 IF=20A, dI/dt=100A/µs 22.7 23.06 15.25 27.5 1.45 1476 Units
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge tD(on) tD(off) Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs
value measured with device still environment with =25°C. power dissipation based TJ(MAX)=175°C, using junction-to-case thermal resistance, more useful setting upper dissipation limit cases where additional heatsinking used. Repetitive rating, pulse width limited junction temperature TJ(MAX)=175°C. thermal impedence from junction case case ambient. static characteristics Figures obtained using <300 pulses, duty cycle 0.5% max. These curves based junction-to-case thermal impedence which measured with device mounted large heatsink, assuming maximum junction temperature TJ(MAX)=175°C. maximum current rating limited bond-wires. Rev2: August 2005 THIS PRODUCT BEEN DESIGNED QUALIFIED CONSUMER MARKET. APPLICATIONS USES CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS AUTHORIZED. DOES ASSUME LIABILITY ARISING SUCH APPLICATIONS USES PRODUCTS. RESERVES RIGHT IMPROVE PRODUCT DESIGN, FUNCTIONS RELIABILITY WITHOUT NOTICE
Alpha Omega Semiconductor, Ltd.
AOU452
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
VGS=4V 3.5V (Volts) On-Region Characteristics VGS=4.5V Normalized On-Resistance RDS(ON) VGS=10V Figure On-Resistance Drain Current Gate Voltage Temperature (°C) Figure On-Resistance Junction Temperature VGS(Volts) Figure Transfer Characteristics 25°C ID(A) 125°C 4.5V VDS=5V
VGS=10V,
VGS=4.5V,
ID=20A (Volts) Figure On-Resistance Gate-Source Voltage 25°C 125°C
1.0E+02 1.0E+01 1.0E+00
RDS(ON)
1.0E-01 1.0E-02 1.0E-03 1.0E-04 1.0E-05
125°C
25°C
(Volts) Figure Body-Diode Characteristics
Alpha Omega Semiconductor, Ltd.
AOU452
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
VDS=12.5V ID=20A Capacitance (pF) 2000 1800 1600 1400 1200 1000 (nC) Figure Gate-Charge Characteristics (Volts) Figure Capacitance Characteristics Crss Coss Ciss
(Volts)
1000.0 RDS(ON) limited 100.0 (Amps) 10.0 10ms 100µs Power TJ(Max)=175°C, TA=25°C 10µs
0.0001
TJ(Max)=175°C TA=25°C
(Volts) Figure Maximum Forward Biased Safe Operating Area (Note Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TC+PDM.ZJC.RJC RJC=3°C/W
0.001
0.01
Pulse Width Figure Single Pulse Power Rating Junction-toCase (Note
descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Single Pulse
0.01 0.00001
0.0001
0.001
0.01
Pulse Width Figure Normalized Maximum Transient Thermal Impedance (Note
Alpha Omega Semiconductor, Ltd.
AOU452
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
ID(A), Peak Avalanche Current 0.00001
TA=25°C
Power Dissipation
0.0001
0.001
Time avalanche, Figure Single Pulse Avalanche capability
TCASE (°C) Figure Power De-rating (Note
Current rating ID(A) TCASE (°C) Figure Current De-rating (Note
Alpha Omega Semiconductor, Ltd.

AOU452 uses advanced trench technology design provide excellent RDS(ON

Top Searches for this datasheet

Other recent searches