AOU438 uses advanced trench technology provide excellent RDS(ON), gate
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AOU438 N-Channel Enhancement Mode Field Effect Transistor
AOU438 uses advanced trench technology provide excellent RDS(ON), gate charge gate resistance. This device ideally suited side switch core power conversion. Standard Product AOU438 Pb-free (meets ROHS Sony specifications). AOU438L Green Product ordering option. AOU438 AOU438L electrically identical
(VGS 10V) RDS(ON) 4.5m (VGS 10V) RDS(ON) 6.5m (VGS 4.5V)
TO-251
View Drain Connected
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current Repetitive avalanche energy L=0.1mH TC=25°C Power Dissipation
Maximum
Units
TC=25°C
TC=100°C
TSTG
TC=100°C
Junction Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Case
Steady-State Steady-State
Symbol
Units °C/W °C/W
Alpha Omega Semiconductor, Ltd.
AOU438
Electrical Characteristics J=25°C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=24V, VGS=0V TJ=55°C VDS=0V, VGS= ±20V VDS=VGS ID=250µA VGS=10V, VDS=5V VGS=10V, ID=20A RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=20A Forward Transconductance VDS=5V, ID=20A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current TJ=125°C 0.72 3200 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 0.54 VGS=4.5V, VDS=15V, ID=20A 17.6 VGS=10V, VDS=15V, RL=0.75, RGEN=3 IF=20A, dI/dt=100A/µs 15.5 3840 Units
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage state drain current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge tD(on) tD(off) Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs
value measured with device still environment with =25°C. power dissipation based TJ(MAX)=175°C, using junction-to-case thermal resistance, more useful setting upper dissipation limit cases where additional heatsinking used. Repetitive rating, pulse width limited junction temperature TJ(MAX)=175°C. thermal impedence from junction case case ambient. static characteristics Figures obtained using <300 pulses, duty cycle 0.5% max. These curves based junction-to-case thermal impedence which measured with device mounted large heatsink, assuming maximum junction temperature TJ(MAX)=175°C. maximum current rating limited bond-wires. Rev1: August 2005 THIS PRODUCT BEEN DESIGNED QUALIFIED CONSUMER MARKET. APPLICATIONS USES CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS AUTHORIZED. DOES ASSUME LIABILITY ARISING SUCH APPLICATIONS USES PRODUCTS. RESERVES RIGHT IMPROVE PRODUCT DESIGN, FUNCTIONS RELIABILITY WITHOUT NOTICE
Alpha Omega Semiconductor, Ltd.
AOU438
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
4.0V ID(A) 3.5V (Volts) On-Region Characteristics VGS=3V VGS(Volts) Figure Transfer Characteristics VDS=5V 125°C
25°C
Normalized On-Resistance RDS(ON) VGS=10V VGS=4.5V
ID=20A VGS=10V VGS=4.5V
Temperature (°C) Figure On-Resistance Junction Temperature
Figure On-Resistance Drain Current Gate Voltage
1.0E+02 1.0E+01 125°C
RDS(ON)
125°C
1.0E+00 1.0E-01 25°C 1.0E-02 1.0E-03 1.0E-04
ID=20A 25°C
(Volts) Figure On-Resistance Gate-Source Voltage
1.0E-05 (Volts) Figure Body-Diode Characteristics
Alpha Omega Semiconductor, Ltd.
AOU438
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
(Volts) (nC) Figure Gate-Charge Characteristics VDS=15V ID=20A Capacitance (pF) 5000
4000 Ciss 3000
2000 Coss 1000 Crss (Volts) Figure Capacitance Characteristics
1000 RDS(ON) limited Power 100µs 10ms TJ(Max)=150°C TA=25°C
1000 1E-05 1E-04 0.001 TJ(Max)=150°C TA=25°C
(Amps)
10µs
(Volts) Figure Maximum Forward Biased Safe Operating Area (Note
0.01
Pulse Width Figure Single Pulse Power Rating Junction-toAmbient (Note
Normalized Transient Thermal Resistance on/T TJ,PK=T A+PDM.ZJC.RJC RJC=1.5°C/W
descending order D=0.5, 0.3, 0.1, 0.05, 0.02, single pulse
Single Pulse 0.01 0.00001
0.0001
0.001
0.01
Pulse Width Figure Normalized Maximum Transient Thermal Impedance (Note
Alpha Omega Semiconductor, Ltd.
AOU438
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
ID(A), Peak Avalanche Current TA=25°C Power Dissipation 0.001 0.01 0.00001 0.0001 TCASE (°C) Figure Power De-rating (Note
Time avalanche, Figure Single Pulse Avalanche capability
Current rating ID(A)
TCASE (°C) Figure Current De-rating (Note
Alpha Omega Semiconductor, Ltd.
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