AOU436 uses advanced trench technology provide excellent RDS(ON) gate
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AOU436 N-Channel Enhancement Mode Field Effect Transistor
AOU436 uses advanced trench technology provide excellent RDS(ON) gate charge. This device suitable load switch applications. Standard Product AOU436 Pb-free (meets ROHS Sony specifications). AOU436L Green Product ordering option. AOU436 AOU436L electrically identical.
(VGS 10V) RDS(ON) 8.5m (VGS 10V) RDS(ON) (VGS 4.5V)
TO-251
View Drain Connected
Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current Repetitive avalanche energy L=0.1mH Power Dissipation TC=25°C TC=100°C TC=25°C TC=100°C
Maximum
Units
TSTG
Junction Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Lead
Steady-State Steady-State
Symbol
Units °C/W °C/W
Alpha Omega Semiconductor, Ltd.
AOU436
Electrical Characteristics J=25°C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=24V, VGS=0V TJ=55°C VDS=0V, VGS= ±20V VDS=VGS ID=250µA VGS=10V, VDS=5V VGS=10V, ID=20A RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=20A Forward Transconductance VDS=5V, ID=20A IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current TJ=125°C 0.71 1520 VGS=0V, VDS=15V, f=100kHz VGS=0V, VDS=0V, f=1MHz 0.47 31.9 VGS=4.5V, VDS=15V, ID=20A 16.2 VGS=10V, VDS=15V, RL=0.75, RGEN=3 IF=20A, dI/dt=100A/µs 11.6 24.2 23.8 15.7 1825 Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage state drain current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge tD(on) tD(off) Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs
value measured with device still environment with =25°C. power dissipation based TJ(MAX)=175°C, using junction-to-case thermal resistance, more useful setting upper dissipation limit cases where additional heatsinking used. Repetitive rating, pulse width limited junction temperature TJ(MAX)=175°C. thermal impedence from junction case case ambient. static characteristics Figures obtained using <300 pulses, duty cycle 0.5% max. These curves based junction-to-case thermal impedence which measured with device mounted large heatsink, assuming maximum junction temperature TJ(MAX)=175°C. maximum current rating limited bond-wires. Rev3: August 2005 THIS PRODUCT BEEN DESIGNED QUALIFIED CONSUMER MARKET. APPLICATIONS USES CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS AUTHORIZED. DOES ASSUME LIABILITY ARISING SUCH APPLICATIONS USES PRODUCTS. RESERVES RIGHT IMPROVE PRODUCT DESIGN, FUNCTIONS RELIABILITY WITHOUT NOTICE
Alpha Omega Semiconductor, Ltd.
AOU436
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
3.5V ID(A) 25°C VGS=3V (Volts) On-Region Characteristics VGS(Volts) Figure Transfer Characteristics VDS=5V 125°C
VGS=4.5V RDS(ON) VGS=10V Normalized On-Resistance
ID=20A VGS=10V VGS=4.5V
Temperature (°C) Figure On-Resistance Junction Temperature
Figure On-Resistance Drain Current Gate Voltage
ID=20A
1.0E+02 1.0E+01 125°C 1.0E+00 125°C 1.0E-01 1.0E-02 1.0E-03 25°C 1.0E-04 1.0E-05 (Volts) Figure Body-Diode Characteristics 25°C
RDS(ON)
(Volts) Figure On-Resistance Gate-Source Voltage
Alpha Omega Semiconductor, Ltd.
AOU436
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
(Volts) (nC) Figure Gate-Charge Characteristics VDS=30V ID=20A Capacitance (pF) 2500
2000
Ciss
1500
1000
Coss Crss
(Volts) Figure Capacitance Characteristics
1000.0 RDS(ON) limited 100.0 (Amps)
10µs Power 100µs TJ(Max)=175°C TA=25°C
10.0 TJ(Max)=175°C TA=25°C
(Volts) Figure Maximum Forward Biased Safe Operating Area (Note
0.0001
0.001
0.01
Pulse Width Figure Single Pulse Power Rating Junction-toAmbient (Note
Normalized Transient Thermal Resistance
D=Ton/T TJ,PK=Tc+PDM.ZJc.RJc RJC=3°C/W
descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Single Pulse 0.01 0.00001 0.0001 0.001 0.01
Pulse Width Figure Normalized Maximum Transient Thermal Impedance (Note
Alpha Omega Semiconductor, Ltd.
AOU436
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
ID(A), Peak Avalanche Current 0.00001 TA=25°C
Power Dissipation 0.01
0.0001 0.001 TCASE (°C) Figure Power De-rating (Note
Time avalanche, Figure Single Pulse Avalanche capability
Current rating ID(A)
TCASE (°C) Figure Current De-rating (Note
Alpha Omega Semiconductor, Ltd.
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