Technology. Beginning 1984 with introduction Power IV®, maintained pos

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Advanced Power Technology
Technology. Beginning 1984 with introduction Power IV®, maintained position forefront power semiconductor technology. focus high voltage, high power high performance segments this market. commitment maintain enhance this position technological leader controlled devices Diodes deliver products which contribute customers' success delivering higher performance power systems. Service. Outstanding technology only part story. global network stocking distributors, representatives, applications engineers, tools place support phases your product design, evaluation procurement activities. world which demands superior execution, we've numerous awards service leader. Quality. commitment excellence things Whether evaluating quality products, technical assistance, customer service quality internal communications systems, excellence standard. Continuous improvement fundamental business!
HIGH VOLTAGE SMPS TRANSISTORS Page
IGBTs (Insulated Gate Bipolar Transistors) .4-6 Loss High Performance Power MOSFETs .7-9 Standard Power MOSFETs 10-12 COOLMOSMOSFETs
DIODES
Silicon Carbide (SiC) Schottky Diodes Fast Recovery Epitaxial Diodes (FREDs) .14-16 High Voltage Schottky Diodes
HIGH VOLTAGE LINEAR MOSFETs CUSTOM PRODUCTS HERMETIC HI-REL PRODUCTS PRODUCTS POWER MODULES
IGBTs (Insulated Gate Bipolar Transistors) .19-25 MOSFETs 26-31 Diodes Custom
PACKAGE OUTLINE DRAWINGS .33-35
"COOLMOS" comprise family transistors developed Infineon Technologies "COOLMOS" trademark Infineon Technologies
Full Line-Up very best High Voltage, High Power, High Performance Transistors Your SMPS Applications
Product Type
Type IGBTs
Type IGBTs
Conventional MOSFETs
Super Junction MOSFETs
Fast-50 Product Family
fastest IGBTs that replace MOSFETs many high frequency SMPS applications including soft switching
300, 600, 900, 1200
Power
Best-in-class on-resistance, gate charge noise immunity
Thunderbolt®
-100
COOLMOS
Description
Short circuit rated IGBTs moderate high frequency SMPS, UPS, motor drive applications
Lowest specific onresitance MOSFETs
Blocking Voltage, volts
600, 1200 Combi
100-1400 FREDFET
600, FRED series Schottky
Fast Anti-Parallel Diode Operation
Metal Gate/Planar Stripe
Combi
Poly Gate/Planar Cell
Design Tools available www.advancedpower.com
Transistor Quick Pick tool choose right transistor your application Application Notes Examples Include: IGBT, MOSFET, Diode Tutorial Parallel Connection Power Electronic Devices Making Gate Charge Information MOSFET IGBT Data Sheets Optimizing MOSFET IGBT Gate Current Minimize dv/dt Induced Failures SMPS Circuits
Insulated Gate Bipolar Transistors (IGBTs)
IGBT (Insulated Gate Bipolar Transistor) combination MOSFET Bipolar Transistor single chip such combines best attributes each type transistor. Bipolar Transistor attributes portion allows operation high on-state current densities with on-state voltage drop MOSFET structure attributes allows ease gate control. IGBT advantage current density over MOSFETs facilitates higher output power equal chip size, provides smaller lower cost components, allows smaller more compact higher power density designs. size IGBT often sizes smaller than MOSFET equal current solution which means lower cost than MOSFETs. characteristics IGBT determined technology used (materials, process, design). IGBTs generally classified into basic technologies (Punch Through) (NonPunch Through). There Product Families IGBTs: Power IGBT Family. These devices available 300, 600, 900, 1200 volt operation hard switching. Thunderbolt® IGBT Family. volt only, these devices capable operation hard switching applications. Fast IGBT Family. 1200 volt devices, designed operation hard switching applications. soft switching topologies these maximum operating frequencies will higher. IGBT products offered utilize offers both technologies cover widest range applications design requirements. They IGBTs used cost effective alternative MOSFETs many applications with high efficiency, improved power density, lower cost. Higher Threshold Voltage Reduced "Miller Capacitance". this provides increased noise spurious turn-on immunity eliminates need negative gate voltage supply turn-off. This eliminates need auxiliary power supply simplifies gate driver ICs. On-State Voltage. conduction losses dramatically lower, especially high temperatures high currents. Conduction losses operating currents temperatures ~1/8 that conventional MOSFET ~1/3 that superjunction MOSFET. Gate Charge. this reduces gate drive power losses enables fast switching. Thermal Resistance. this maximizes power dissipation capabilities lowers junction temperature improved reliability. Short Tail Current Ideal Soft Switching. Combis. POWER IGBTs available co-packaged with fast-recovery, antiparallel diode optimized reverse recovery charge, further enhancing performance power switching applications. Co-packaging POWER IGBTs with these rectifiers reduces EMI, switching losses, conduction losses, while reducing component count cost. Switching Energies. this enables very switching losses. combination with conduction losses thermal resistance, levels high frequency capability given current achieved. Data sheets include graph frequency current IGBT Combi. This graph comprehends both conduction switching losses allows designer properly select best device application. Combi's. Power IGBTs available co-packaged with schottky diodes ultimate performance. Switching energies lower SiC/IGBT combi than those parts using conventional diodes. many applications these IGBTs used moderate high frequency SMPS applications. Also, technology some added benefits over type IGBTs.
POWER IGBTs
latest generation 300, 600, 900, 1200 volt PTType IGBTs utilizing advanced proprietary POWER Technology. 300V parts designed replace 200-300V MOSFETs alternative energy inverters. volt IGBTs designed replace 500V/600V MOSFETs, volt IGBTs replace volt MOSFETs, 1200 volt IGBTs designed replace 1000V/1200V MOSFETs switch mode power supply (SMPS), power factor correction (PFC), other high-power applications. IGBT's, gate-drive voltage requirement similar MOSFET. This allows larger size power MOSFETs, multiple MOSFETs parallel replaced with just POWER IGBT. Features Benefits POWER Technology IGBTs Metal Gate. these IGBTs utilize proprietary planar stripe metal gate design providing internal chip gate resistance orders magnitude lower than comparable industry standard polysilicon gate devices. This enables very uniform fast switching across entire chip with uniform heat distribution. metal gate minimizes chip gate resistance variation from batch batch providing user with more consistent switching performance. addition, chip gate resistance allows designer maximum range switching speed increases immunity dv/dt induced turn-on.
THUNDERBOLT® FAST IGBTs
Features Benefits IGBTs Ruggedness. Technology more rugged wider base lower gain bipolar transistor. IGBTs short circuit, avalanche energy, RBSOA rated while POWER IGBTs with higher switching frequency capability RBSOA rated. Paralleling. This easier with technology positive temperature coefficient VCE(ON) similar MOSFET. POWER IGBTs from have slightly negative temperature coefficient paralleled require added precautions, such careful thermal matching VCE(ON) sorting. High Temperature Operation. turn-off speed switching losses remain relatively constant over entire operating temperature range. turn-off speed switching losses increase with temperature, extremely short tail current.
NEW!
POWER
Technology Ultralow Gate Resistance Charge Highest Frequency IGBTs Ultralow Switching Losses Hard Soft Switching Cost Alternative MOSFETs Excellent Noise Immunity Single Supply Gate Drive Combi with High Speed Diode
BVCES Volts
SINGLE
Insulated Gate Bipolar Transistors (IGBTs)
110o Part Number Package Style
VCE(ON) 25OC (Typ)
1200 1200
APT13GP120K APT15GP90K APT15GP60K APT11GP60K APT32GU30K APT13GP120B APT25GP120B APT35GP120B APT45GP120B APT15GP90B APT25GP90B APT40GP90B APT15GP60B APT30GP60B APT40GP60B APT50GP60B APT32GU30B APT60GU30B APT83GU30B APT75GP120B2 APT65GP60B2 APT80GP60B2 APT35GP120J APT45GP120J APT75GP120J APT40GP90J APT40GP60J APT50GP60J APT65GP60J APT80GP60J APT13GP120BDF1 APT25GP120BDF1 APT15GP90BDF1 APT25GP90BDF1 APT15GP60BDF1 APT30GP60BDF1 APT35GP120B2DF2 APT45GP120B2DF2 APT40GP90B2DF2 APT40GP60B2DF2 APT50GP60B2DF2 APT65GP60L2DF2 APT35GP120JDF2 APT45GP120JDF2 APT75GP120JDF3 APT40GP90JDF2 APT30GP60JDF1 APT40GP60JDF1 APT50GP60JDF2 APT65GP60JDF2 APT80GP60JDF3 APT13GP120BSC APT15GT60BSC APT15GP60BSC APT30GP60BSC
TO-220 TO-220[K]
TO-247
TO-247[B]
1200 1200
T-MAX
ISOTOP®
T-MAXTM[B2]
Combi (IGBT Series" FRED)
1200 1200 1200
TO-247
T-MAX
264-MAX TM[L2]
264-MAX
ISOTOP®
ISOTOP®[J] SOT-227
COMBI (IGBT SILICON CARBIDE SCHOTTKY DIODE
TO-247
1200
Insulated Gate Bipolar Transistors (IGBTs)
BVCES Volts VCE(ON) 25OC (Typ) 90-110o Part Number Package Style
THUNDERBOLT®
SINGLE
Technology Short Circuit Rated Moderate High Frequency Easy Paralleling Single Supply Gate Drive Combi with Diode
SINGLE
1.75 2.15
APT8GT60KR APT12GT60KR APT15GT60KR APT20GT60KR APT30GT60KR APT12GT60BR APT15GT60BR APT20GT60BR APT30GT60BR APT40GT60BR APT60GT60BR APT60GT60JR APT15GT60BRD APT30GT60BRD APT60GT60JRD APT11GF120KR APT20GF120KR APT20GF120BR APT33GF120BR APT50GF60BR APT50GF120B2R APT100GF60B2R APT50GF120LR APT100GF60LR APT100GF60JR APT11GF120BRD1 APT20GF120BRD APT33GF120B2RD APT50GF60B2RD APT33GF120LRD APT50GF60LRD APT40GF120JRD APT50GF120JRD APT60GF120JRD APT100GF60JRD
TO-220 TO-220[K]
TO-247
ISOTOP® TO-247 ISOTOP® TO-220 TO-247[B]
Combi (IGBT Series FRED)
FAST
1200
Technology Short Circuit Rated Moderate Frequency Lowest Conduction Loss Easy Paralleling Single Supply Gate Drive Combi with Diode
1200 1200 1200 1200 1200 1200 1200
TO-247 T-MAXTM[B2]
T-MAX
TO-264
ISOTOP® TO-247 T-MAXTO-264[L] TO-264
Combi (IGBT Series FRED)
ISOTOP®
ISOTOP®[J] SOT-227
Power MOSFETs FREDFETs
latest generation conventional MOSFETs with lowest on-resistance, gate charge, total losses given footprint. Designed meet most advanced SMPS design requirements higher reliability, power density, efficiency, this generation MOSFETs dramatically lowers largest contributors power losses SMPS applications. CONDUCTION LOSSES. On-Resistance (RDS(ON)) been lowered thermal resistance lowered given chip size. SWITCHING LOSSES. Combining ultra gate charge proprietary aluminum metal gate structure results MOSFET capable extremely fast switching very switching losses. Total gate charge (Qg) "Miller" gate charge (Qgd) have been reduced 60%. Like Power MOSFETs, Power utilizes resistance aluminum metal gate structure. This allows faster gate signal propagation than possible with conventional polysilicon gate structures. addition, Power employs gate design layouts extremely internal chip equivalent gate resistances (EGR) that order magnitude lower than competitive devices provides very uniform switching across entire chip. This provides faster switching speeds, faster than previous generation Power MOSFETs. RESULT. higher efficiency, more power less space. lowest power loss Figure Merit (FOM) conventional high power MOSFETs industry RDS(ON) addition, like Power MOSFETs, Power devices extremely rugged. AVALANCHE ENERGY RATED. Power MOSFETs 100% tested guaranteed avalanche energy. HIGH GATE RUPTURE VOLTAGE. Thick high quality gate oxide allows specification continuous operation transient operation gate voltage. Power provides industry leading spurious turn-on immunity. HIGH NOISE IMMUNITY. Higher Gate Threshold voltage Vgs(th), volts minimum. REDUCED SHOOT THROUGH SUSCEPTIBILITY. equivalent gate resistance (EGR) high input capacitance ratio results Industry leading high figure Merit (FOM) Vgs(th) Qgs/Qgd HIGH COMMUTATING dv/dt CAPABILITY. from defect tolerant linear cell design very parasitic bipolar base resistance. 1100 VOLT PRODUCTS added voltage headroom reduce failures minimize conduction loss tradeoff. Ideal higher power designs existing converter topologies where increased field failure rates concern existing topologies power levels where converter field failure rates need reduced. families POWER MOSFETs offered: MOSFETs-for applications utilizing intrinsic body drain diode FREDFETs-for applications utilizing intrinsic body drain diode. These MOSFETs have body drain diode optimized fast reverse recovery time (trr) improved commutating dv/dt capability special silicon lifetime control processes. POWER FREDFETs have improved features benefits POWER MOSFETs addition. Faster Intrinsic Diode Reverse Recovery.The reverse recovery time (trr) been reduced thereby eliminating external FRED Schottky rectifiers certain circuit configurations. Improved Ruggedness. ruggedness intrinsic diode also been improved, allowing improved commutating dv/dt ratings.
CUSTOM FREDFETS HIGH TEMPERATURE OPERATION. lifetime process utilized FREDFETs this catalog proven industry standard. some designs there requirements improved high temperature device performance this made available using proprietary platinum lifetime control process. platinum process provides high temperature advantages soft recovery, lower leakage current, more temperature independent performance.
APPLICATIONS FREDFETs. Power FREDFETs should specified under following conditions: Whenever intrinsic body drain diode MOSFET expected carry forward current. soft switched circuits, where body diode carries current.
Power MOSFETs FREDFETs
BVDSS Volts 1200 1000 RDS(ON) Ohms 4.700 3.000 ID(Cont) Amps MOSFET FREDFET (low MOSFET) APT1204R7KFLL APT1003RKFLL TO-220[K] 1200 4.700 1.400 1.200 1.200 1.000 3.000 1.600 0.900 0.780 0.520 0.430 0.380 0.290 0.250 0.210 0.310 0.230 0.180 0.240 0.180 0.160 0.140 0.061 0.075 0.036 0.034 0.670 0.570 0.580 0.440 0.450 0.350 0.240 0.200 0.170 0.130 0.100 0.130 0.100 0.085 0.100 0.075 0.065 0.036 0.030 0.020 0.016 -APT1003RBLL -APT10090BLL APT10078BLL APT8052BLL APT8043BLL APT6038BLL APT6029BLL APT6025BLL APT6021BLL -APT5024BLL APT5018BLL APT5016BLL APT5014BLL APT30M61BLL APT30M75BLL APT20M36BLL APT20M34BLL -APT10045B2LL APT10035B2LL APT8024B2LL APT8020B2LL APT6017B2LL APT6013B2LL APT6010B2LL -APT5010B2LL APT50M75B2LL APT50M65B2LL APT30M36B2LL APT30M30B2LL APT20M20B2LL APT20M16B2LL APT1204R7BFLL APT1201R4BFLL APT1201R2BFLL APT1101R2BFLL APT1101RBFLL APT1003RBFLL APT1001R6BFLL APT10090BFLL APT10078BFLL APT8052BFLL APT8043BFLL APT6038BFLL APT6029BFLL APT6025BFLL APT6021BFLL APT5531BFLL APT5523BFLL APT5518BFLL APT5024BFLL APT5018BFLL APT5016BFLL APT5014BFLL APT30M61BFLL APT30M75BFLL APT20M36BFLL APT20M34BFLL APT12067B2FLL APT12057B2FLL APT11058B2FLL APT11044B2FLL APT10045B2FLL APT10035B2FLL APT8024B2FLL APT8020B2FLL APT6017B2FLL APT6013B2FLL APT6010B2FLL APT5513B2FLL APT5510B2FLL APT55M85B2FLL APT5010B2FLL APT50M75B2FLL APT50M65B2FLL APT30M36B2FLL APT30M30B2FLL APT20M20B2FLL APT20M16B2FLL T-MAXTM[B2] PAK[S] TO-268 Package Style -APT1003RKLL
1100 1000
TO-247[B]
1200 1100 1000
Part Numbers packages replace with part number
TO-264[L]
Part Numbers TO-264 packages replace"B2" with part number
Power MOSFETs FREDFETs
BVDSS Volts 1200 1000 1200 RDS(ON) Ohms 0.400 0.260 0.140 0.075 0.065 0.050 0.670 0.570 0.400 0.310 0.580 0.440 0.260 0.450 0.350 0.260 0.210 0.240 0.200 0.140 0.110 0.170 0.130 0.100 0.075 0.060 0.130 0.100 0.085 0.065 0.050 0.100 0.075 0.065 0.050 0.038 0.036 0.030 0.017 0.020 0.011 ID(Cont) Amps MOSFET FREDFET (low MOSFET) APT12040L2FLL APT10026L2FLL APT8014L2FLL APT60M75L2FLL APT55M65L2FLL APT50M50L2FLL APT12067JFLL APT12057JFLL APT12040JFLL APT12031JFLL APT11058JFLL APT11044JFLL APT11026JFLL APT10045JFLL APT10035JFLL APT10026JFLL APT10021JFLL APT8024JFLL APT8020JFLL APT8014JFLL APT8011JFLL APT6017JFLL APT6013JFLL APT6010JFLL APT60M75JFLL APT60M60JFLL APT5513JFLL APT5510JFLL APT55M85JFLL APT55M65JFLL APT55M50JFLL APT5010JFLL APT50M75JFLL APT50M65JFLL APT50M50JFLL APT50M38JFLL APT30M36JFLL APT30M30JFLL APT30M17JFLL APT20M20JFLL APT20M11JFLL 264-MAX TM[L2] Package Style -APT10026L2LL APT8014L2LL APT60M75L2LL -APT50M50L2LL -APT10045JLL APT10035JLL APT10026JLL APT10021JLL APT8024JLL APT8020JLL APT8014JLL APT8011JLL APT6017JLL APT6013JLL APT6010JLL APT60M75JLL APT60M60JLL -APT5010JLL APT50M75JLL APT50M65JLL APT50M50JLL APT50M38JLL APT30M36JLL APT30M30JLL APT30M17JLL APT20M20JLL APT20M11JLL
1100
1000
ISOTOP®[J] SOT-227 (ISOLATED BASE)
MOSFET/FRED ("Combi Products")
BVDSS Volts RDS(ON) Ohms 0.100 0.075 ID(Cont) Amps MOSFET APT5010JLLU2 APT50M75JLLU2 BOOST CONFIGURATION
Power MOSFETs FREDFETs
Introduced 1997 designed meet most advanced SMPS design requirements higher reliability, power density, efficiency that time, Power still provide best trade-off between performance cost some applications. Like Power MOSFETs, Power utilizes resistance aluminum metal gate structure. This allows faster gate signal propagation than possible with conventional polysilicon gate structures. result extremely internal chip equivalent gate resistances (EGR) that order magnitude lower than competitive devices which enables uniform high speed switching across entire chip. families POWER MOSFETs offered: MOSFETs applications utilizing intrinsic body drain diode FREDFETs applications utilizing intrinsic body drain diode. These MOSFETs have body drain diode optimized fast reverse recovery time (trr) improved commutating dv/dt capability special silicon lifetime control processes. POWER FREDFETs have improved features benefits POWER MOSFETs addition. Faster Intrinsic Diode Reverse Recovery reverse recovery time (trr) been reduced thereby eliminating external FRED Schottky rectifiers certain circuit configurations. Improved Ruggedness. ruggedness intrinsic diode also been improved, allowing improved commutating dv/dt ratings. CUSTOM FREDFETS HIGH TEMPERATURE OPERATION. lifetime process utilized FREDFETs this catalog proven industry standard. some designs there requirements improved high temperature device performance this made available using proprietary platinum lifetime control process. platinum process provides high temperature advantages soft recovery, lower leakage current, more temperature independent performance. APPLICATIONS FREDFETS. Power FREDFETs should specified under following conditions: Whenever intrinsic body drain diode MOSFET expected carry forward current. soft switched circuits, where body diode carries current.
BVDSS Volts 1200 1000
RDS(ON) Ohms 1.600 1.500 1.000 0.860 0.750 0.650 0.560 0.400 0.350 0.300 0.250 0.280 0.240 0.200 0.170 0.150
ID(Cont) Amps
MOSFET
FREDFET (low MOSFET) APT1201R6BVFR APT1201R5BVFR APT1001RBVFR APT10086BVFR APT8075BVFR APT8065BVFR APT8056BVFR APT6040BVFR APT6035BVFR APT6030BVFR APT6025BVFR APT5028BVFR APT5024BVFR APT5020BVFR APT5017BVFR APT5015BVFR
Package Style
-APT1001RBVR APT10086BVR APT8075BVR APT8065BVR APT8056BVR APT6040BVR APT6035BVR APT6030BVR APT6025BVR APT5028BVR APT5024BVR APT5020BVR APT5017BVR APT5015BVR
TO-247[B]
PAK[S] TO-268
Part Numbers packages replace with part number
Power MOSFETs FREDFETs
BVDSS Volts RDS(ON) Ohms 0.200 0.160 0.140 0.120 0.085 0.070 0.045 0.040 0.038 0.025 0.019 0.800 0.600 0.500 0.400 0.300 0.240 0.200 0.150 0.110 0.140 0.100 0.085 0.080 0.070 0.040 0.022 0.018 0.011 0.009 0.450 0.300 0.180 0.080 0.060 0.500 0.800 0.400 0.500 0.430 0.250 0.300 0.280 0.150 0.150 0.130 0.075 0.100 0.085 0.060 0.050 ID(Cont) Amps MOSFET FREDFET (low MOSFET) APT4020BVFR APT4016BVFR APT4014BVFR APT4012BVFR APT30M85BVFR APT30M70BVFR APT20M45BVFR APT20M40BVFR APT20M38BVFR APT10M25BVFR APT10M19BVFR APT12080B2VFR APT12060B2VFR APT10050B2VFR APT10040B2VFR APT8030B2VFR APT8024B2VFR APT6020B2VFR APT6015B2VFR APT6011B2VFR APT5014B2VFR APT5010B2VFR APT50M85B2VFR APT50M80B2VFR APT40M70B2VFR APT30M40B2VFR APT20M22B2VFR APT20M18B2VFR APT10M11B2VFR APT10M11B2VFR APT12045L2VFR APT10030L2VFR APT8018L2VFR APT60M80L2VFR APT50M60L2VFR APT14050JVFR APT12080JVFR APT12040JVFR APT10050JVFR APT10043JVFR APT10025JVFR APT8030JVFR APT8028JVFR APT8015JVFR APT6015JVFR APT6013JVFR APT60M75JVFR APT5010JVFR APT50M85JVFR APT50M60JVFR APT50M50JVFR ISOTOP®[J] SOT-227 (ISOLATED BASE) 264-MAX TM[L2] TO-247[B] PAK[S] Package Style -APT30M85BVR APT30M70BVR APT20M45BVR APT20M40BVR APT20M38BVR APT10M25BVR APT10M19BVR -APT10050B2VR APT10040B2VR APT8030B2VR APT8024B2VR APT6020B2VR APT6015B2VR APT6011B2VR APT5014B2VR APT5010B2VR APT50M85B2VR APT50M80B2VR -APT30M40B2VR APT20M22B2VR APT20M18B2VR -APT10030L2VR APT8018L2VR APT60M80L2VR APT50M60L2VR -APT10050JVR APT10043JVR APT10025JVR APT8030JVR APT8028JVR APT8015JVR APT6015JVR APT6013JVR APT60M75JVR APT5010JVR APT50M85JVR APT50M60JVR APT50M50JVR
1200 1000
Part Numbers packages replace with part number
T-MAXTM[B2]
TO-264[L]
1200 1000 1400 1200 1000
Part Numbers TO-264 packages replace"B2" with part number
Power MOSFETs FREDFETs
BVDSS Volts RDS(ON) Ohms 0.070 0.035 0.040 0.019 0.022 0.019 0.011 0.011 0.007 ID(Cont) Amps MOSFET FREDFET (low MOSFET) APT40M70JVFR APT40M35JVFR APT30M40JVFR APT30M19JVFR APT20M22JVFR APT20M19JVFR APT20M11JVFR APT10M11JVFR APT10M07JVFR ISOTOP®[J] SOT-227 (ISOLATED BASE) CONFIGURATION Package Style -APT30M40JVR APT30M19JVR APT20M22JVR APT20M19JVR APT20M11JVR
MOSFET/FRED ("Combi Products")
BVDSS Volts RDS(ON) Ohms 0.100 0.100 ID(Cont) Amps MOSFET APT5010JVRU2 APT5010JVRU3
Boost (U2) Buck (U3)
COOLMOS MOSFETs
BVDSS Volts
RDS(ON) Ohms 0.450 0.450 0.290 0.190 0.095 0.070 0.290 0.190 0.070 0.145 0.145 0.145 0.035
ID(Cont) Amps
MOSFET APT11N80KC3 APT11N80BC3 APT17N80BC3 APT20N60BC3 APT40N60BC3 APT47N60BC3 APT17N80SC3 APT20N60SC3 APT47N60SC3 APT34N80B2C3 APT34N80LC3 APT31N80JC3 APT77N60JC3
Package Style TO-220
TO-220[K] PAK[S] TO-268
TO-247
T-MAXTO-264 ISOTOP®
TO-247[B]
T-MAXTM[B2]
TO-264[L]
"COOLMOS" comprise family transistors developed Infineon Technologies "COOLMOS" trademark Infineon Technologies
ISOTOP®[J] SOT-227 (ISOLATED BASE)
NEW!
Silicon Carbide Schottky Diodes
Reverse Recovery
APPLICATIONS Forward Topologies Hard Soft Switched Topologies High Frequency, High Performance FEATURES Time
Current
Silicon Carbide (SiC) Schottky Diodes latest development high power diode technology. offers superior dynamic thermal performance over conventional silicon power diodes. essentially reverse recovery stable switching characteristics over wide temperature range. With 175oC rating, positive temperature coefficient, extremely fast switching, enables designs with superior efficiencies reduced size. When co-packaged with APT's Power MOS7® IGBTs switching energies lower than those parts using diodes.
ZERO RECOVERY
BENEFITS
Switching Losses Nearly Eliminated -ZERO RECOVERYGreatly Reduced Turn-On Loss Switch Improved Overall Efficiency Enables Higher Frequency Operation Simplify Eliminate Snubber Circuits
Schottky Barrier-Majority Carrier Only
Wide Energy
High Temperature Operation Leakage Current Radiation Hardness Resistance-High Power Density
High Breakdown Electric Field High Termal Conductivity High Pulse Capability Positive Temperature Coefficient
Reliable High Power Operation
Thermally Stable Paralleling
ZERO RECOVERYis trademark Cree Inc.
Volts Silicon Carbide
Custom Configurations Available Hermetic Packages Available Page Combi's
Amps
(volts) 25OC
Part Number APT5SC120K APT10SC120KCT APT5SC120K APT6SC60K APT6SC60KCT APT10SC60K APT10SC60KCT APT20SC60K APT6SC60SA APT10SC60SA
Configuration Single Center Single Single Center Single Center Single Single Single
Package Style
1200
TO-220
TO-220
Fast Recovery Epitaxial Diodes (FREDs)
Figure below shows typical tradeoff between reverse recovery switching times (trr) forward voltage drop (VF) FRED lower switching times (faster switching speeds) result higher forward voltage drop. specific process design define curve. critical part manufacturing process lifetime control lower material lifetime lower switching times (move left curve). lifetime control technique proprietary platinum diffusion process more platinum faster switching times. reverse recovery times directly related reverse recovery charge. offers three families "series" high performance FRED products which represented specific points trade curve Figure
Figure
Current
Time (ns)
Figure
Forward Voltage Drop
Figure shows relative comparison reverse recovery waveforms each "series" products. proprietary platinum lifetime control process results performance advantages compared FREDs built with alternative processes lifetime control:
High Temperature Capability less degradation performance high temperatures allowing increased maximum junction temperature safe operation. Junction temperature maximum without concern excessively high leakage currents thermal runaway. Softer Recovery minimize Very Fast switching times (trr) along with extremely reverse recovery current (IRRM) reverse recovery charge (Qrr) given forward voltage (VF).
Switching Time {reverse recovery charge}
"DS" series FREDs currently offered discrete products. "DF" series FREDs only offered Power IGBT combis.
NEW!
Coming Half 2004: Series FREDs pleased announce next step forward FRED technology. series products optimized continuous conduction mode other hard switched high performance power supplies. Ultra reverse recovery charge circumvents high power loss switch, enabling higher frequency operation lower system cost. well balanced tradeoff between forward voltage reverse characteristics result power loss diode well. series diodes have very soft recovery under operating conditions, greatly reducing losses cost associated with filters snubbers required with snappy diodes. High leakage current that plagues some recovery charge diodes eliminated with APT's proprietary platinum minority carrier life time control. APT's proprietary platinum processing results superior temperature stability, enabling easy paralleling safe operation rated maximum junction temperature. first series products available will Volt followed other voltages. current ratings Amperes. These products will available standard package configurations APT's existing series FRED products.
Series FREDs
Volts 1200 1000 Amps (volts) 25OC trr(ns) 25OC Part Number APT30D120B APT60D120B APT30D100B APT60D100B APT15D60B APT30D60B APT60D60B APT30D40B APT60D40B APT60D30B APT30D20B APT60D20B APT15D120K APT15D100K APT15D60K APT15D40K APT15D30K APT2X30D120J APT2X60D120J APT2X100D120J APT2X30D100J APT2X60D100J APT2X100D100J APT2X30D60J APT2X60D60J APT2X100D60J APT2X30D40J APT2X60D40J APT2X100D40J APT2X30D30J APT2X60D30J APT2X100D30J APT2X30D20J APT2X60D20J APT2X100D20J APT15D120BCT APT30D120BCT APT15D100BCT APT30D100BCT APT15D60BCT APT30D60BCT APT15D40BCT APT30D40BCT APT15D30BCT APT30D30BCT APT15D20BCT APT30D20BCT
TO-247[BCT] *Common Cathode
ISOTOP®[J] SOT-227 Antiparallel Configuration (ISOLATED BASE)
Package Style
TO-247[B]
1200 1000 1200
PAK[S] TO-268
Part Numbers packages replace with part number
TO-220[K]
1000
Part Numbers Parallel Configuration replace with 101. Example: 2X30D120J becomes 2X31D120J
1200 1000
Current rating common cathode configuration
Series FREDs
Volts 1000 1000 1000 Amps (volts) 25OC trr(ns) 25OC Part Number APT60D100LCT APT60D60LCT APT60D40LCT APT60D30LCT APT60D20LCT APT15D100BHB APT30D100BHB APT30D60BHB APT30D100BCA APT15D60BCA APT30D60BCA APT30D20BCA TO-247[BCA] Common Anode TO-247[BHB] Half Bridge TO-264[LCT] *Common Cathode Package Style
"DS" Series FREDs
Volts Amps (volts) 25OC trr(ns) 25OC 12.5
300V FREDs Series
Part Number APT30DS60B APT15DS60B Package Style TO-247
Schottky Diodes
These Schottky Diodes offer several dramatic improvements over currently used Fast Recovery Epitaxial Diodes (FREDs):
lower forward voltage drop (VF) minimize conduction loss enabling higher power conversion efficiencies. softer reverse recovery characteristics resulting reduced avalanche energy rated (EAS) offering improved reliability.
Power supply designers these schottky diodes improve cost, power density, efficiency their designs. Designs with these schottky diodes experience 10-15% lower losses than FRED's with same voltage ratings. These cost effective Schottky Diodes replace FRED's output rectifiers high power volt telecom rectifiers DC-DC converters free wheeling anti-parallel diodes voltage converters.
Amps
(volts) 25OC "200V" 0.80 0.80 0.83 0.80 0.89 0.83 0.83 0.80 0.80 0.83 0.89 0.89 0.83 0.80
trr(ns) 25OC "200V"
Part Number APT15S20K APT15S20KCT APT60S20S APT30S20S APT100S20B APT60S20B APT30S20B APT30S20BCT APT15S20BCT APT60S20B2CT APT100S20LCT APT2X101S20J APT2X61S20J APT2X31S20J
Configuration
Package Style TO-220
*common cathode
TO-247
*common cathode *common cathode *common cathode *common cathode
T-MAXTO-264
ISOTOP®
Current rating common cathode configuration
Linear MOSFETs
What Linear MOSFET? MOSFET specifically designed more robust than standard MOSFET when operated with both high voltage high current near conditions (>100msecs). Problem with SMPS MOSFETs MOSFETs optimized high frequency SMPS applications have poor high voltage SOA. Most SMPS type MOSFETs overstate capability high voltage data sheets. Above ~30V conditions, drops faster than indicated limited operation. pulsed loads (t<10ms) there generally problem using standard MOSFET. Technology Innovation Introduced 1999, modified proprietary patented selfaligned metal gate MOSFET technology enhanced performance high voltage, linear applications. These Linear MOSFETs typically provide 1.5-2.0 times capability high voltage compared other MOSFET technologies optimized switching applications. Designers will need Linear MOSFETs when. High Current 200V >100msec Used variable power resistor Soft start application (limit surge currents) Linear amplifier circuit Typical Applications. Active loads above volts such dynamic loads testing power supplies, batteries, fuel cells, etc. High voltage, high current constant current sources.
BVDSS Volts 1000
RDS(ON) Ohms 0.125 0.090 0.600 0.125 0.090
ID(Cont) Amps
Watts
Part Number APL602B2 APL502B APL1001J APL602J APL502J
Package Style
T-MAXTM[B2]
TO-264[L]
ISOTOP®[J] SOT-227 (ISOLATED BASE)
Part Numbers TO-264 packages replace "B2" with part number
Custom Products
addition broad line leading edge products this catalog, dedicated providing innovative solutions customers. This means working with customers solve their procurement, manufacturing application problems. known supplier that provides solutions that others cannot, will not, provide. These include, limited Custom silicon packaging Supply chain management requirements Strategic inventories allow unexpected changes demand Special testing Thermal power management Hi-Rel Testing/Screening
Hermetic Hi-Rel
Advanced Power Technology manufactures broad range discrete power semiconductors industrial, military, space applications. focus high voltage, high power, high performance segment this market. APT's technology leadership allows offer latest high performance power MOSFETs, FREDFETs, IGBTs, Diodes. products listed this catalog provided hermetic packages. ISO9001-2000 registered, MIL-PRF-19500 certified offer TXV, Space Level processing, Custom testing screening well Plastic Up-Screening. Contact your local representative directly copy current Hi-Rel Capabilities Brochure.
Products
Advanced Power Technology's products available form. information requested from website www.advancedpower.com contact directly copy current Product Catalog.
Power Modules
Advanced Power Technology offers comprehensive line standard shelf module products well custom Application Specific Power Modules (ASPM®) designed specifically meet your special needs using state assembly techniques, materials silicon. modules used wide variety markets applications similar discrete products where their benefits provide customers with superior value. Those benefits include: bare dice results high degree integration facilitates close spacing between devices. such highly integrated power structures number external connections kept bare minimum, four only case full bridge (+Vbus, 0Vbus, VOut1, VOut2). other connections internal very short minimum parasitic resistance inductance. parasitics permit safe operation high frequencies improving efficiency reducing voltage overshoots device turn off. Lower overshoots also equate less EMI/RFI easier filtering. Thanks compact nature ASPM® modules, decoupling capacitors situated close power bus, thereby nullifying effects stray inductance between module. attachment bare dice onto substrate results excellent thermal management with full galvanic isolation base plate. substrate (Insulated Metal Substrate ceramic either alumina Al2O3 aluminium nitride AlN) type number semiconductor chips carefully chosen based required electrical thermal performance well cost. Kelvin connections gates sources implemented directly on-chip, thereby separating control signals from power paths optimum noise immunity. special applications like linear, Hi-Rel, power semiconductor chips pre-sorted into narrow bands VGS(th) leakage current, improve system performance through parameter matching. Circuit functions that generate substantial losses integrated onto substrates external cooling, while drivers protection elements dissipating little power assembled form onto PCBs inside housing. Galvanic isolation input signals realized internal optocouplers transformers with integrated DC-DC converter furnishing isolated power. Such module driven low-level ground-referenced signals. snubber networks also integrated into ASPM® module, their close proximity power semiconductors guaranteeing effectiveness. Because internal power connections mask defined during substrate manufacture, reproducibility both thermal electrical characteristics near perfect, both within given batch from lot. Summarizing, better voltage safety margins together with first class reproducible thermal electrical performance lead improved reliability ASPM® modules compared discrete assemblies. thermal cycling capability module dramatically extended replacing copper base plate with engineered materials such AlSiC closely matched Temperature Coefficients Expansion compared internal ceramic substrates. Both size weight power function shrunk drastically result integration. Most wiring internal little hardware needed assemble module onto heat sink connect electrically. Depending circuit complexity power dissipated sometimes possible dispense entirely with costly heavy base plate. larger modules where base plate nonetheless obligatory, advantageous specify Metal-Matrix-Composite material (AlSiC). Such baseplate permits significant weight reduction (AlSiC density Copper density 8.6). Using power module greatly reduces amount required external hardware busbars, screws, wire, etc. Procurement costs complete circuit function much less, only single macro-component sourced instead multitude parts needed discrete solution. Labor costs system assembly customer much lower. Time market shortened, thereby benefiting customer's Returnon-Investment. Europe provides engineering complete power function, allowing customer concentrate system packaging considerations. Customer-Specific-Module approach offers great flexibility. ASPM® module easily upgradeable through design improvements, substitution more advanced semiconductors, better manufacturing techniques order maintain state-of-the-art performance competitive costs. Modules compatible with standard industry, easy market price competitive. Full product range offered including Trench gate IGBTs, Power Power MOSFETs FREDFETs, Coolmosand diodes comprehensive range electrical configurations. profile modules combined with state devices permit enhanced electrical, thermal mechanical ratings. ASPM® modules integrate exact customer electrical configuration (power driver) including device part number (mix silicon sources possible). Specific silicon (sorted specific parameters), specific material assembly processes, dedicated shape connectors package combined with implementation screening procedures make ASPM® module meet thermal, electrical, quality reliability requirements customer. ASPM® module designed meet 100% customer needs. provides customer with unique solution. development, design engineering competencies, analytical modeling tools, manufacturing technologies, multisite infrastructure satisfy your requirements power integration, providing design manufacturability, improvement performance reliability.
IGBT Power Modules
PHASE BRIDGE
VCES IC(A) VCE(ON) Tf(Ic)(ns) TC=80 rated rated IGBT Type TRENCH TRENCH TRENCH TRENCH TRENCH TRENCH Package Style
Part Number APTGF20X60E2 APTGF30X60E2 APTGF50X60E2 APTGF10X120E2 APTGF15X120E2 APTGF25X120E2 APTGF50X120E2 APTGS50X170E2 APTGF20X60P2 APTGF20X60TP2 APTGF30X60P2 APTGF30X60TP2 APTGF50X60P2 APTGF50X60TP2 APTGF90X60E3 APTGF90X60TE3 APTGF125X60E3 APTGF125X60TE3 APTGF150X60E3 APTGF150X60TE3 APTGF10X120P2 APTGF10X120TP2 APTGF15X120P2 APTGF15X120TP2 APTGF25X120P2 APTGF25X120TP2 APTGF50X120P2 APTGF50X120TP2 APTGF50X120E3 APTGF50X120TE3 APTGT75X120E3 APTGT75X120TE3 APTGT100X120E3 APTGT100X120TE3 APTGT150X120E3 APTGT150X120TE3 APTGS50X170E3 APTGS50X170TE3 APTGS75X170E3 APTGS75X170TE3
Long package
1200
1700
Short package
1200
1700
Note: reference built full bridge configuration instead phase bridge
optional: APTG (w/o NTC) APTG .TE3 (with NTC)
(for detailed ratings pin-out location, refer product datasheet www.advancedpower.com)
IGBT Power Modules
PHASE BRIDGE RECTIFIER
VCES IC(A) VCE(ON) Tf(Ic)(ns) TC=80o rated rated IGBT Type TRENCH TRENCH TRENCH TRENCH TRENCH TRENCH TRENCH TRENCH Package Style
Part Number APTGF10X60RTP2 APTGF10X60BTP2 APTGF15X60RTP2 APTGF15X60BTP2 APTGF20X60RTP2 APTGF20X60BTP2 APTGF30X60RTP2 APTGF30X60BTP2 APTGF50X60RTP3 APTGF50X60BTP3 APTGS10X120RTP2 APTGS10X120BTP2 APTGS15X120RTP2 APTGS15X120BTP2 APTGS25X120RTP2 APTGS25X120BTP2 APTGT35X120RTP3 APTGT35X120BTP3 APTGT50X120RTP3 APTGT50X120BTP3 APTGT75X120RTP3 APTGT75X120BTP3 APTGT50X170RTP3 APTGT50X170BTP3
1200
1700
QCR10 CR12 CR14
Brake switch optional: APTG RTP2 (w/o brake) APTG BTP2 (with brake)
CR11 CR13 CR15
Note: reference built full bridge configuration instead phase bridge
(for detailed ratings pin-out location, refer product datasheet www.advancedpower.com)
IGBT Power Modules
ASYMMETRICAL BRIDGE
VCES IC(A) VCE(ON) TC=80 rated Tf(Ic)(ns) rated IGBT Type Package Style VBUS VBUS SENSE
Part Number APTGU40DH60T APTGU70DH60T APTGF90DH60T APTGU100DH60 APTGF180DH60 APTGU30DH120T APTGF50DH120T APTGU60DH120T APTGU90DH120 APTGF150DH120
EOUT1 OUT2
0/VBUS SENSE
0/VBUS
NTC2
1200
FULL BRIDGE
VCES IC(A) VCE(ON) Tf(Ic)(ns) TC=80o rated rated IGBT Type Package Style Part Number APTGU40H60T APTGU70H60T APTGF90H60T APTGU100H60 APTGF180H60 APTGU30H120T APTGF50H120T APTGU60H120T APTGU90H120 APTGF150H120
VBUS
OUT1 OUT2
1200
NTC0/VBUS NTC2
DUAL COMMON SOURCE
VCES IC(A) VCE(ON) Tf(Ic)(ns) TC=80 rated rated IGBT Type Package Style
Part Number
1200
APTGU70DU60T APTGF90DU60T APTGU140DU60T APTGF180DU60T APTGU200DU60 APTGF350DU60 APTGF50DU120T APTGU60DU120T APTGF100DU120T APTGU120DU120T APTGU180DU120 APTGF300DU120
NTC2
(for detailed ratings pin-out location, refer product datasheet www.advancedpower.com)
IGBT Power Modules
BOOST CHOPPER
VCES IC(A) VCE(ON) Tf(Ic)(ns) TC=80o rated rated IGBT Type Trench Trench Trench Trench Trench Trench Trench Trench Trench Trench Trench Trench Trench Trench Trench Trench Trench Package Style Part Number APTGF50DA60D1 APTGU70DA60T APTGF75DA60D1 APTGF90DA60D1 APTGF90DA60T APTGF125DA60D1 APTGU140DA60T APTGF165DA60D1 APTGF180DA60D3 APTGF180DA60T APTGU200DA60 APTGF250DA60D3 APTGF330DA60D3 APTGF350DA60 APTGT25DA120D1 APTGT35DA120D1 APTGT50DA120D1 APTGF50DA120T APTGU60DA120T APTGT75DA120D1 APTGT100DA120D1 APTGF100DA120T APTGU120DA120T APTGT150DA120D1 APTGT150DA120D3 APTGU180DA120 APTGT200DA120D3 APTGT300DA120D3 APTGF300DA120 APTGT30DA170D1 APTGT50DA170D1 APTGT75DA170D1 APTGT100DA170D1 APTGT150DA170D1 APTGT150DA170D3 APTGT200DA170D3 APTGT300DA170D3
VBUS SENSE
VBUS
NTC2
0/VBUS
1200
1700
(for detailed ratings pin-out location, refer product datasheet www.advancedpower.com)
IGBT Power Modules
BUCK CHOPPER
VCES IC(A) VCE(ON) Tf(Ic)(ns) TC=80o rated rated IGBT Type Trench Trench Trench Trench Trench Trench Trench Trench Trench Trench Trench Trench Trench Trench Trench Trench Trench Package Style Part Number APTGF50SK60D1 APTGU70SK60T APTGF75SK60D1 APTGF90SK60D1 APTGF90SK60T APTGF125SK60D1 APTGU140SK60T APTGF165SK60D1 APTGF180SK60D3 APTGF180SK60T APTGU200SK60 APTGF250SK60D3 APTGF330SK60D3 APTGF350SK60 APTGT25SK120D1 APTGT35SK120D1 APTGT50SK120D1 APTGF50SK120T APTGU60SK120T APTGT75SK120D1 APTGT100SK120D1 APTGF100SK120T APTGU120SK120T APTGT150SK120D1 APTGT150SK120D3 APTGU180SK120 APTGT200SK120D3 APTGT300SK120D3 APTGF300SK120 APTGT30SK170D1 APTGT50SK170D1 APTGT75SK170D1 APTGT100SK170D1 APTGT150SK170D1 APTGT150SK170D3 APTGT200SK170D3 APTGT300SK170D3
VBUS
NTC2
0/VBUS SENSE
0/VBUS
1200
1700
(for detailed ratings pin-out location, refer product datasheet www.advancedpower.com)
IGBT Power Modules
PHASE
VCES IC(A) VCE(ON) Tf(Ic)(ns) TC=80o rated rated IGBT Type Trench Trench Trench Trench Trench Trench Trench Trench Trench Trench Trench Trench Trench Trench Trench Trench Trench Package Style Part Number APTGF50A60D1 APTGU70A60T APTGF75A60D1 APTGF90A60D1 APTGF90A60T APTGF125A60D1 APTGU140A60T APTGF165A60D1 APTGF180A60D3 APTGF180A60T APTGU200A60 APTGF250A60D3 APTGF330A60D3 APTGF350A60 APTGT25A120D1 APTGT35A120D1 APTGT50A120D1 APTGF50A120T APTGU60A120T APTGT75A120D1 APTGT100A120D1 APTGF100A120T APTGU120A120T APTGT150A120D1 APTGT150A120D3 APTGU180A120 APTGT200A120D3 APTGT300A120D3 APTGF300A120 APTGT30A170D1 APTGT50A170D1 APTGT75A170D1 APTGT100A170D1 APTGT150A170D1 APTGT150A170D3 APTGT200A170D3 APTGT300A170D3
VBUS
NTC2
0/VBUS
1200
1700
(for detailed ratings pin-out location, refer product datasheet www.advancedpower.com)
IGBT Power Modules
SINGLE SWITCH
VCES IC(A) VCE(ON) Tf(Ic)(ns) TC=80o rated rated IGBT Type Trench Trench Trench Trench Trench Trench Trench Trench Package Style
Part Number APTGF200U60D4 APTGF300U60D4 APTGF360U60D4 APTGF500U60D4 APTGF660U60D4 APTGT200U120D4 APTGT300U120D4 APTGT400U120D4 APTGT600U120D4 APTGT200U170D4 APTGT300U170D4 APTGT400U170D4 APTGT600U170D4
1200
1700
SINGLE SWITCH, INTELLIGENT POWER MODULE
VCES IC(A) VCE(ON) Tf(Ic)(ns) TC=80o rated rated IGBT Type Package Style Part Number
APTLGF70U120T APTLGF75U120T* APTLGF140U120T APTLGF150U120T* APTLGF210U120T APTLGF225U120T* APTLGF280U120T APTLGF300U120T*
1200
AlSiC base plate extended reliability substrate improved thermal performance
+12V
UNDERVOLTAGE
LOCKOUT
SIGNAL
PROCESSING
HIGH
FREQUENCY
CIRCUIT
TRANSFORMER
DRIVER
HIGH
FREQUENCY TRANSFORMER
FORCED START CIRCUIT
ISOLATED AUXILIARY POWER SUPPLY
Single switch IGBT module with integrated driver isolated power supplies dedicated operate (zero voltage switching) operation KHz.
NTC2
(for detailed ratings pin-out location, refer product datasheet www.advancedpower.com)
MOSFET Power Modules
BOOST CHOPPER
VDSS RDS(ON) Ohms ID(A) TC=80o Tf(Id)(ns) MOSFET Package rated Type Style VBUS SENSE
VBUS
NTC2
Part Number
APTM20DAM10T APTM20DAM08T APTM20DAM05 APTM20DAM04 APTM50DAM38T APTM50DAM35T APTM50DAM19 APTM50DAM17
0/VBUS
BUCK CHOPPER
VDSS RDS(ON) Ohms ID(A) TC=80o Tf(Id)(ns) MOSFET Package rated Type Style VBUS NTC2
Part Number
APTM20SKM10T APTM20SKM08T APTM20SKM05 APTM20SKM04 APTM50SKM38T APTM50SKM35T APTM50SKM19 APTM50SKM17
EOUT
0/VBUS SENSE
0/VBUS
FULL BRIDGE
VDSS RDS(ON) Ohms ID(A) Tf(Id)(ns) TC=80o rated MOSFET Type FREDFET FREDFET FREDFET FREDFET FREDFET FREDFET FREDFET FREDFET Package Style VBUS
Part Number APTM20HM20FT APTM20HM16FT APTM20HM10F APTM20HM08F APTM50HM75FT APTM50HM65FT APTM50HM38F APTM50HM35F
OUT2
NTC1 0/VBUS
NTC2
(for detailed ratings pin-out location, refer product datasheet www.advancedpower.com)
MOSFET Power Modules
FULL BRIDGE SERIES PARALLEL DIODES
VDSS 1000 RDS(ON) Ohms ID(A) TC=80o Tf(Id)(ns) MOSFET Package rated Type Style
CR1A
Part Number APTM20HM20ST APTM50HM75ST APTM100H45ST
VBUS CR3A
CR1B CR3B
CR2A OUT1 OUT2
CR4A
CR2B CR4B
NTC0/VBUS
NTC2
FULL BRIDGE RECTIFIER BRIDGE
VDSS RDS(ON) ID(A) Tf(Id)(ns) Ohms TC=80o rated
MOSFET Type FREDFET
VBUS
Package Style
Part Number APTM50HM75FRT
VBUS2
CRLA
OUT1A
OUT2A
OUT1B
OUT2B
RCR2
NTC2
0/VBUS
FULL BRIDGE, INTELLIGENT POWER MODULE
VDSS RDS(ON) ID(A) Tf(Id)(ns) Ohms TC=80 rated
MOSFET Type FREDFET FREDFET
CTNV1
Package Style LP8W LP8W
Part Number APTLM50H10FRT APTLM50HM75FRT
LP8W
+BUS
DRIVER
DRIVER
DRIVER
OUT2
DRIVER
DRIVER
0/VBUS
VSHVSH+
(for detailed ratings pin-out location, refer product datasheet www.advancedpower.com)
CTN2
0/V5
MOSFET Power Modules
PHASE
VDSS RDS(ON) ID(A) Tf(Id)(ns) Ohms TC=80 rated MOSFET Type FREDFET FREDFET FREDFET FREDFET FREDFET FREDFET FREDFET FREDFET FREDFET FREDFET Package Style VBUS
NTC2
Part Number
APTM20AM10FT APTM20AM08FT APTM20AM05F APTM20AM05FT APTM20AM04F APTM50AM38FT APTM50AM35FT APTM50AM25FT APTM50AM19F APTM50AM17F
0/VBUS
PHASE SERIES PARALLEL DIODES
VDSS RDS(ON) ID(A) Tf(Id)(ns) Ohms TC=80 rated MOSFET Type Package Style LP8W LP8W
VBUS
NTC2
Part Number APTM20AM10ST APTM20AM06S APTM50AM38ST APTM50AM24S APTM50AM19ST APTM100A23ST APTM100A13S APTM100A12ST
1000
0/VBUS
LP8W
(for detailed ratings pin-out location, refer product datasheet www.advancedpower.com)
MOSFET Power Modules
ASYMMETRICAL BRIDGE
VDSS RDS(ON) ID(A) Tf(Id)(ns) Ohms TC=80 rated MOSFET Type Package Style Part Number APTM20DHM20T APTM20DHM16T APTM20DHM10 APTM20DHM08 APTM50DHM75T APTM50DHM65T APTM50DHM38 APTM50DHM35
OUT1 OUT2
VBUS
VBUS SENSE
QCR3
0/VBUS SENSE
0/VBUS
NTC2
DUAL COMMON SOURCE
VDSS RDS(ON) ID(A) Tf(Id)(ns) Ohms TC=80 rated MOSFET Type Package Style Part Number
APTM20DUM10T APTM20DUM08T APTM20DUM05 APTM20DUM05T APTM20DUM04 APTM50DUM38T APTM50DUM35T APTM50DUM25T APTM50DUM19 APTM50DUM17
NTCNTC2
(for detailed ratings pin-out location, refer product datasheet www.advancedpower.com)
MOSFET Power Modules
SINGLE SWITCH SERIES PARALLEL DIODES
VDSS 1000 RDS(ON) ID(A) Tf(Id)(ns) Ohms TC=80o rated MOSFET Type Package Style Part Number APTM20UM09S APTM20UM05S APTM50UM25S APTM50UM19S APTM100U13S
MOSFET with Diodes Power Modules
BOOST CHOPPER W/SILICON CARBIDE PARALLEL DIODES
VDSS RDS(ON) ID(A) Tf(Id)(ns) Ohms TC=80 rated MOSFET Type Package Style Part Number
VBUS NTC2
VBUS SENSE
APTM50DAM38CT
0/VBUS
PHASE SERIES W/SILICON CARBIDE PARALLEL DIODES
VDSS 1000 RDS(ON) ID(A) Tf(Id)(ns) Ohms TC=80o rated MOSFET Type Package Style VBUS
NTC2
Part Number
APTM50AM38SCT APTM50AM24SC APTM100A23SCT APTM100A13SC
0/VBUS
FULL BRIDGE SERIES W/SILICON CARBIDE PARALLEL DIODES
VDSS 1000 RDS(ON) ID(A) Tf(Id)(ns) Ohms TC=80 rated MOSFET Type Package Style
CR1A
VBUS
CR3A
CR1B CR3B
Part Number APTM50HM75SCT APTM100H45SCT
CR2A OUT1 OUT2
CR4A
CR2B CR4B
NTC0/VBUS
NTC2
(for detailed ratings pin-out location, refer product datasheet www.advancedpower.com)
COOLMOS with Diodes Power Modules
BOOST CHOPPER W/SILICON CARBIDE PARALLEL DIODES
VDSS RDS(ON) ID(A) Tf(Id)(ns) Ohms TC=80o rated MOSFET Type COOLMOS Package Style Part Number
VBUS SENSE
VBUS
NTC2
APTC60DAM18CT
0/VBUS
PHASE SERIES W/SILICON CARBIDE PARALLEL DIODES
VDSS RDS(ON) ID(A) Tf(Id)(ns) Ohms TC=80o rated MOSFET Type COOLMOS COOLMOS COOLMOS COOLMOS COOLMOS Package Style VBUS
NTC2
Part Number
APTC60AM35SCT APTC60AM18SC APTC80A15SCT APTC80A10SCT APTC80AM75SC
0/VBUS
VBUS
FULL BRIDGE SERIES W/SILICON CARBIDE PARALLEL DIODES
VDSS RDS(ON) ID(A) Tf(Id)(ns) Ohms TC=80o rated MOSFET Type COOLMOS COOLMOS Package Style
CR1A
CR3A
CR1B CR3B
Part Number APTC60HM70SCT APTC80H29SCT
CR2A OUT1 OUT2
CR4A
CR2B CR4B
NTC0/VBUS
NTC2
"CoolMOSTM" comprise family transistors developed Infineon Technologies "CoolMOSTM" trademark Infineon Technologies AG".
DIODE Power Modules
SINGLE DIODE
VRRM 1000 1200 VF(V) Tj=25o IF(A) TC80o DIODE Type FRED FRED FRED FRED FRED Package Style
Part Number APTDF500U20 APTDF500U40 APTDF450U60 APTDF430U100 APTDF400U120
(for detailed ratings pin-out location, refer product datasheet www.advancedpower.com)
Application Specific Power Modules (ASPM®)
Whatever your application needs including Power Supplies Medical Imaging Solid State Relays Lighting Control Induction Heating Battery Charger Linear Amplifiers Welding Systems Laser Control Amplifiers Inverters/Speed Controllers
custom approach provides with fully integrated solution designed meet your specific requirements with optimized balance between performance cost without compromising quality reliability. work closely with using latest technologies innovative circuit mechanical design provide competitive advantage need.
FEATURES BENEFITS
latest silicon packaging technologies combined with innovative circuit design enables deliver high performance products that meet exceed customer requirements terms POWER DENSITY SIZE REDUCTION
High level integration -Power Stage (H-Bridge, Phase Bridge, etc.) -Control protection functions located internal -Opto coupler, fiber optic transformer isolation driver circuits Minimum number external connections Reduced overall system size weight Short internal connections minimize parasitic resistance inductance -Allows high oprating frequencies -Reduced voltage overshoot -Low -Improved efficiency Decoupling capacitors nullify effects stray inductance pre-sorted enhance performance Power devices mounted directly thermally conductive substrates Choice substrates optimum performance cost Full isolation baseplate Engineered materials such AlSiC, Cu/W, Cu/Mo extend thermal cycling capability
ELECTRICAL CHARACTERISTICS ENHANCEMENT:
THERMAL MANAGEMENT:
PACKAGES MATERIALS Standard Custom Package Outlines Wide Variety Materials Baseplates, Substrates, Terminals, Connectors Leading Edge Silicon Other Chip/Component Suppliers Integrated Liquid Cooling Option PROCESS CAPABILITES
Thick Film
Copper Silver Resistors Multi-Layer Coat Potting Compounds Hard Resins/Epoxies
Solder Reflow
Vacuum Furnace N2/Forming Gas/H2 Furnace Various Solder Alloys
Surface Mount
Auto Placement Through Hole Insertion
Encapsulation
Wire Bond
Auto Manual Heavy Gauge Wire
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ASPM® registered trademark Advanced Power Technology
Power Module Outlines
location depends module configuration. Please refer product datasheet pins assignment. dimensions millimeter
Power Module Outlines
location depends module configuration. Please refer product datasheet pins assignment. dimensions millimeter
outputs
outputs
LP8W
Package Outline Drawings
Revised 4/18/95
Revised 8/29/97
ISOTOP® registered trademark Thomson
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reserves right change, without notice, specifications information contained herein.
March 2004

Technology. Beginning 1984 with introduction Power IV®, maintained pos

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