Advanced Power Technology Technology. Beginning 1984 with introdu

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Advanced Power Technology
Technology. Beginning 1984 with introduction Power IV®, maintained position forefront power semiconductor technology. focus high voltage, high power high performance segments this market. commitment maintain enhance this position technological leader controlled devices Diodes deliver products which contribute customers' success delivering higher performance power systems. Service. Outstanding technology only part story. global network stocking distributors, representatives, applications engineers, tools place support phases your product design, evaluation procurement activities. world which demands superior execution, we've numerous awards service leader. Quality. commitment excellence things Whether evaluating quality products, technical assistance, customer service quality internal communications systems, excellence standard. Continuous improvement fundamental business!
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CONTENTS
MIL-PRF-19500
HIGH VOLTAGE SMPS TRANSISTORS
Page
IGBTs (Insulated Gate Bipolar Transistors) Loss High Performance Power MOSFETs Standard Power MOSFETs 10-12 COOLMOSMOSFETs 12-13
DIODES
Fast Recovery Epitaxial Diodes (FREDs) 14-16 High Voltage Schottky Diodes
HIGH VOLTAGE LINEAR MOSFETs CUSTOM PRODUCTS HERMETIC HI-REL PRODUCTS PRODUCTS PACKAGE OUTLINE DRAWINGS
"COOLMOS" comprise family transistors developed Infineon Technologies "COOLMOS" trademark Infineon Technologies
Full Line-Up very best High Voltage, High Power, High Performance Transistors Your SMPS Applications
Product Type
Type IGBTs
Type IGBTs Fast
Conventional MOSFETs
Super Junction MOSFETs
Power
Best-in-class on-resistance, gate charge noise immunity Lowest specific on-resistance MOSFETs
Product Family
fastest IGBTs that replace MOSFETs many high frequency SMPS applications including soft switching 600, 900, 1200 Combi
Thunderbolt®
Short circuit rated IGBTs moderate high frequency SMPS applications
Description
Blocking Voltage, volts
600, 1200 Combi
100-1400 FREDFET
600, FRED series Schottky
Fast Anti-Parallel Diode Option
Metal Gate/Planar Stripe
Poly Gate/Planar Cell
Design Tools available www.advancedpower.com
Transistor Quick Pick tool choose right transistor your application Application Notes Examples Include: IGBT, MOSFET, Diode Tutorial Parallel Connection Power Electronic Devices Making Gate Charge Information MOSFET IGBT Data Sheets Optimizing MOSFET IGBT Gate Current Minimize dv/dt Induced Failures SMPS Circuits
Insulated Gate Bipolar Transistors (IGBTs)
IGBT combination MOSFET Bipolar Transistor within single chip such combines best attributes each transistor into single device. bipolar current conduction allows operation high on-state current densities with on-state voltage drop MOSFET structure allows ease gate control. IGBT advantage current density over MOSFETs facilitates higher output power, provides smaller lower cost components, allows smaller higher power density designs. size IGBT often sizes smaller than MOSFET solution which means lower cost than MOSFETs. characteristics IGBT determined technology used (materials, process, design). IGBTs generally classified into basic technologies (Punch Through) (Non-Punch Through). There Product Families IGBTs: Power IGBT Family. Designated "GP"in part number, these devices available 600, 900, 1200 volt operation hard switching. Thunderbolt® IGBT Family. volt only, designated "GT" part number, these devices capable operation 100kHz hard switching applications. Fast IGBT Family. 1200 volt devices,designated "GF" part number, these devices designed operation 100kHz hard switching applications. IGBT products offered utilize both technologies cover widest range applications design requirements. They used cost effective alternative MOSFETs many applications with high efficiency, improved power density, lower cost. On-State Voltage. conduction losses dramatically lower, especially high temperatures. Gate Charge. this reduces gate drive power losses enables fast switching. Thermal Resistance. this maximizes power dissipation capabilities lowers junction temperature improved reliability. Short Tail Current Ideal Soft Switching. Combis. POWER IGBTs available co-packaged with fast-recovery, antiparallel diode optimized reverse recovery charge, further enhancing performance power switching applications. Co-packaging POWER IGBTs with these rectifiers reduces EMI, switching losses, conduction losses, while reducing component count cost. Switching Energies. this enables very switching losses. combination with conduction losses thermal resistance, levels high frequency capability given current achieved. Data sheets include graph frequency current IGBT Combi. This graph comprehends both conduction switching losses allows designer properly select best device application.
THUNDERBOLT® FAST IGBTs
many applications these IGBTs used moderate high frequency SMPS applications. Also, technology some added benefits over type IGBTs. FEATURES BENEFITS Ruggedness. Technology more rugged wider base lower gain bipolar transistor. IGBTs short circuit, avalanche energy, RBSOA rated while POWER IGBTs with higher switching frequency capability RBSOA rated. Paralleling. This easier with technology positive temperature coefficient VCE(ON) similar MOSFET. POWER IGBTs from have slightly negative temperature coefficient paralleled require added precautions which considered good design practice paralleling IGBTs. High Temperature Operation. turn-off speed switching losses remain relatively constant over entire operating temperature range. turn-off speed switching losses increase with temperature, extremely short tail current.
POWER IGBTs
latest generation 600, 900, 1200 volt PT-Type IGBTs utilizing advanced proprietary POWER Technology. volt IGBTs designed replace 500v/600v MOSFETs, volt IGBTs replace volt MOSFETs, 1200 volt IGBTs designed replace 1000v/1200v MOSFETs switch mode power supply (SMPS), power factor correction (PFC), other high-power applications. gate-drive voltage requirement similar MOSFET. This allows larger size power MOSFETs, multiple MOSFETs parallel replaced with just POWER IGBT. FEATURES BENEFITS Metal Gate. these IGBTs utilize proprietary planar stripe metal gate design providing internal chip gate resistance orders magnitude lower than comparable industry standard polysilicon gate devices. This enables very uniform fast switching across entire chip with uniform heat distribution. metal gate minimizes chip gate resistance variation from batch batch providing user with more consistent switching performance. addition, chip gate resistance allows designer maximum range switching speed increases immunity dv/dt induced turn-on. Higher Threshold Voltage Reduced "Miller Capacitance". this provides increased noise spurious turn-on immunity eliminates need negative gate voltage supply turn-off. This eliminates need auxiliary power supply simplifies gate driver ICs.
NEW!
BVCES Volts VCE(ON) 25OC (Typ)
Insulated Gate Bipolar Transistors (IGBTs)
110o Part Number Package Style
SINGLE
POWER
Technology Ultralow Gate Resistance Charge Highest Frequency IGBTs
1200 1200
APT13GP120K APT15GP90K APT15GP60K APT13GP120B APT25GP120B APT35GP120B APT45GP120B APT15GP90B APT25GP90B APT40GP90B APT15GP60B APT30GP60B APT40GP60B APT50GP60B APT75GP120B2 APT65GP60B2 APT80GP60B2 APT35GP120J APT45GP120J APT75GP120J APT40GP90J APT40GP60J APT50GP60J APT65GP60J APT80GP60J APT25GP120BDF1 APT13GP120BDF1 APT15GP90BDF1 APT25GP90BDF1 APT15GP60BDF1 APT30GP60BDF1 APT35GP120B2DF2 APT45GP120B2DF2 APT40GP90B2DF2 APT40GP60B2DF2 APT50GP60B2DF2 APT65GP60L2DF2 APT35GP120JDF2 APT45GP120JDF2 APT75GP120JDF3 APT40GP90JDF2 APT30GP60JDF1 APT40GP60JDF1 APT50GP60JDF2 APT65GP60JDF2 APT80GP60JDF3 ISOTOP® 264-MAXT-MAXTO-247 ISOTOP® T-MAXTM[B2] T-MAXTO-247 TO-220 TO-220[K]
Ultralow Switching Losses Hard Soft Switching Cost Alternative MOSFETs Excellent Noise Immunity Single Supply Gate Drive Combi with High Speed Diode
TO-247[B]
1200 1200
Combi (IGBT Series" FRED)
1200 1200 1200
264-MAX TM[L2]
ISOTOP®[J] SOT-227
Insulated Gate Bipolar Transistors (IGBTs)
BVCES Volts VCE(ON) 25OC (Typ) 90-110o Part Number Package Style
SINGLE
THUNDERBOLT®
Technology Short Circuit Rated
1.75 2.15
APT8GT60KR APT12GT60KR APT15GT60KR APT20GT60KR APT30GT60KR APT12GT60BR APT15GT60BR APT20GT60BR APT30GT60BR APT40GT60BR APT60GT60BR APT60GT60JR APT15GT60BRD APT30GT60BRD APT60GT60JRD APT11GF120KR APT20GF120KR APT20GF120BR APT33GF120BR APT50GF60BR APT50GF120B2R APT100GF60B2R APT50GF120LR APT100GF60LR APT100GF60JR APT11GF120BRD1 APT20GF120BRD APT33GF120B2RD APT50GF60B2RD APT33GF120LRD APT50GF60LRD APT40GF120JRD APT50GF120JRD APT60GF120JRD APT100GF60JRD
TO-220 TO-220[K]
Moderate High Frequency Easy Paralleling Single Supply Gate Drive Combi with Diode
TO-247
ISOTOP® TO-247 ISOTOP® TO-220 TO-247[B]
Combi (IGBT Series FRED)
FAST
Technology Short Circuit Rated Moderate Frequency Lowest Conduction Loss Easy Paralleling Single Supply Gate Drive Combi with Diode
SINGLE
1200 1200 1200 1200 1200 1200 1200 1200
TO-247 T-MAXTM[B2]
T-MAX
TO-264
ISOTOP® TO-247 T-MAXTO-264[L] TO-264
Combi (IGBT Series FRED)
ISOTOP®
ISOTOP®[J] SOT-227
Power MOSFETs FREDFETs
latest generation conventional MOSFETs with lowest on-resistance, gate charge, total losses given footprint. Designed meet most advanced SMPS design requirements higher reliability, power density, efficiency, this generation MOSFETs dramatically lowers largest contributors power losses SMPS applications. CONDUCTION LOSSES. On-Resistance DS(ON)) been lowered thermal resistance lowered given chip size. SWITCHING LOSSES. Combining ultra gate charge proprietary aluminum metal gate structure results MOSFET capable extremely fast switching very switching losses. Total gate charge "Miller" gate charge (Qgd) have been reduced 60%. Like Power MOSFETs, Power utilizes resistance aluminum metal gate structure. This allows faster gate signal propagation than possible with conventional polysilicon gate structures. addition, Power employs gate design layouts extremely internal chip equivalent gate resistances (EGR) that order magnitude lower than competitive devices provides very uniform switching across entire chip. This provides faster switching speeds, faster than previous generation Power MOSFETs. RESULT. higher efficiency, more power less space. lowest power loss Figure Merit (FOM) conventional high power MOSFETs industry RDS(ON) addition, like Power MOSFETs, Power devices extremely rugged. AVALANCHE ENERGY RATED. Power MOSFETs 100% tested guaranteed avalanche energy. HIGH GATE RUPTURE VOLTAGE. Thick high quality gate oxide allows specification continuous operation transient operation gate voltage. Power provides industry leading spurious turn-on immunity. HIGH NOISE IMMUNITY. Higher Gate Threshold voltage Vgs(th), volts minimum. REDUCED SHOOT THROUGH SUSCEPTIBILITY. increased gate threshold voltage -Vgs(th), ultralow equivalent gate resistance (EGR) high input capacitance ratio (Qgs/Qgd) results Industry leading high figure Merit (FOM) Vgs(th) Qgs/Qgd
HIGH COMMUTATING dv/dt CAPABILITY. from defect tolerant linear cell design very parasitic bipolar base resistance. 1100 VOLT PRODUCTS added voltage headroom reduce failures minimize conduction loss tradeoff. Ideal higher power designs existing converter topologies where increased field failure rates concern existing topologies power levels where converter field failure rates need reduced. families POWER MOSFETs offered: MOSFETs applications utilizing intrinsic body drain diode FREDFETs applications utilizing intrinsic body drain diode. These MOSFETs have body drain diode optimized fast reverse recovery time (trr) improved commutating dv/dt capability special silicon lifetime control processes. POWER FREDFETs have improved features benefits POWER MOSFETs addition. Faster Intrinsic Diode Reverse Recovery.The reverse recovery time (trr) been reduced thereby eliminating external FRED Schottky rectifiers certain circuit configurations. Improved Ruggedness. ruggedness intrinsic diode also been improved, allowing improved commutating dv/dt ratings.
CUSTOM FREDFETS HIGH TEMPERATURE OPERATION. lifetime process utilized FREDFETs this catalog proven industry standard. some designs there requirements improved high temperature device performance this made available using proprietary platinum lifetime control process. platinum process provides high temperature advantages soft recovery, lower leakage current, more temperature independent performance.
APPLICATIONS FREDFETs. Power FREDFETs should specified under following conditions: Whenever intrinsic body drain diode MOSFET expected carry forward current.
soft switched circuits, where body diode carries current.
Power MOSFETs FREDFETs
BVDSS Volts 1200 1000 RDS(ON) Ohms 4.700 3.000 ID(Cont) Amps MOSFET FREDFET (low MOSFET) APT1204R7KFLL APT1003RKFLL TO-220[K] 1200 4.700 1.400 1.200 1.200 1.000 0.900 0.780 3.000 0.520 0.430 0.380 0.290 0.250 0.210 0.310 0.230 0.180 0.240 0.180 0.160 0.140 0.061 0.075 0.036 0.034 0.670 0.570 0.580 0.440 0.450 0.350 0.240 0.200 0.170 0.130 0.100 0.130 0.100 0.085 0.100 0.075 0.065 0.036 0.030 0.020 0.016 APT1204R7BLL APT1201R4BLL APT1201R2BLL -APT10090BLL APT10078BLL APT1003RBLL APT8052BLL APT8043BLL APT6038BLL APT6029BLL APT6025BLL APT6021BLL -APT5024BLL APT5018BLL APT5016BLL APT5014BLL APT30M61BLL APT30M75BLL APT20M36BLL APT20M34BLL APT12067B2LL APT12057B2LL -APT10045B2LL APT10035B2LL APT8024B2LL APT8020B2LL APT6017B2LL APT6013B2LL APT6010B2LL -APT5010B2LL APT50M75B2LL APT50M65B2LL APT30M36B2LL APT30M30B2LL APT20M20B2LL APT20M16B2LL APT1204R7BFLL APT1201R4BFLL APT1201R2BFLL APT1101R2BFLL APT1101RBFLL APT10090BFLL APT10078BFLL APT1003RBFLL APT8052BFLL APT8043BFLL APT6038BFLL APT6029BFLL APT6025BFLL APT6021BFLL APT5531BFLL APT5523BFLL APT5518BFLL APT5024BFLL APT5018BFLL APT5016BFLL APT5014BFLL APT30M61BFLL APT30M75BFLL APT20M36BFLL APT20M34BFLL APT12067B2FLL APT12057B2FLL APT11058B2FLL APT11044B2FLL APT10045B2FLL APT10035B2FLL APT8024B2FLL APT8020B2FLL APT6017B2FLL APT6013B2FLL APT6010B2FLL APT5513B2FLL APT5510B2FLL APT55M85B2FLL APT5010B2FLL APT50M75B2FLL APT50M65B2FLL APT30M36B2FLL APT30M30B2FLL APT20M20B2FLL APT20M16B2FLL
NEW! NEW! NEW! NEW!
Package Style
APT1204R7KLL APT1003RKLL
1100 1000
TO-247[B]
PAK[S] TO-268
1200 1100 1000
Part Numbers packages replace with part number
T-MAXTM[B2]
TO-264[L]
Part Numbers TO-264 packages replace"B2" with part number
Power MOSFETs FREDFETs
BVDSS Volts 1200 1000 1200 RDS(ON) Ohms 0.400 0.260 0.140 0.075 0.065 0.050 0.670 0.570 0.400 0.310 0.580 0.440 0.260 0.450 0.350 0.260 0.210 0.240 0.200 0.140 0.110 0.170 0.130 0.100 0.075 0.060 0.130 0.100 0.085 0.065 0.050 0.100 0.075 0.065 0.050 0.038 0.036 0.030 0.017 0.020 0.011 ID(Cont) Amps MOSFET FREDFET (low MOSFET) APT12040L2FLL APT10026L2FLL APT8014L2FLL APT60M75L2FLL APT55M65L2FLL APT50M50L2FLL APT12067JFLL APT12057JFLL APT12040JFLL APT12031JFLL APT11058JFLL APT11044JFLL APT11026JFLL APT10045JFLL APT10035JFLL APT10026JFLL APT10021JFLL APT8024JFLL APT8020JFLL APT8014JFLL APT8011JFLL APT6017JFLL APT6013JFLL APT6010JFLL APT60M75JFLL APT60M60JFLL APT5513JFLL APT5510JFLL APT55M85JFLL APT55M65JFLL APT55M50JFLL APT5010JFLL APT50M75JFLL APT50M65JFLL APT50M50JFLL APT50M38JFLL APT30M36JFLL APT30M30JFLL APT30M17JFLL APT20M20JFLL APT20M11JFLL
NEW!
Package Style
APT12040L2LL APT10026L2LL APT8014L2LL APT60M75L2LL -APT50M50L2LL APT12067JLL APT12057JLL APT12040JLL APT12031JLL -APT10045JLL APT10035JLL APT10026JLL APT10021JLL APT8024JLL APT8020JLL APT8014JLL APT8011JLL APT6017JLL APT6013JLL APT6010JLL APT60M75JLL APT60M60JLL -APT5010JLL APT50M75JLL APT50M65JLL APT50M50JLL APT50M38JLL APT30M36JLL APT30M30JLL APT30M17JLL APT20M20JLL APT20M11JLL
264-MAX TM[L2]
1100
1000
NEW!
ISOTOP®[J] SOT-227 (ISOLATED BASE)
MOSFET/FRED ("Combi Products")
BVDSS Volts RDS(ON) Ohms 0.100 0.075 ID(Cont) Amps MOSFET APT5010JLLU2 APT50M75JLLU2 BOOST CONFIGURATION
Power MOSFETs FREDFETs
Introduced 1997 designed meet most advanced SMPS design requirements higher reliability, power density, efficiency that time, Power still provide best trade-off between performance cost some applications. Like Power MOSFETs, Power utilizes resistance aluminum metal gate structure. This allows faster gate signal propagation than possible with conventional polysilicon gate structures. result extremely internal chip equivalent gate resistances (EGR) that order magnitude lower than competitive devices which enables uniform high speed switching across entire chip. families POWER MOSFETs offered: MOSFETs applications utilizing intrinsic body drain diode FREDFETs applications utilizing intrinsic body drain diode. These MOSFETs have body drain diode optimized fast reverse recovery time (trr) improved commutating dv/dt capability special silicon lifetime control processes. POWER FREDFETs have improved features benefits POWER MOSFETs addition. Faster Intrinsic Diode Reverse Recovery reverse recovery time (trr) been reduced thereby eliminating external FRED Schottky rectifiers certain circuit configurations. Improved Ruggedness. ruggedness intrinsic diode also been improved, allowing improved commutating dv/dt ratings. CUSTOM FREDFETS HIGH TEMPERATURE OPERATION. lifetime process utilized FREDFETs this catalog proven industry standard. some designs there requirements improved high temperature device performance this made available using proprietary platinum lifetime control process. platinum process provides high temperature advantages soft recovery, lower leakage current, more temperature independent performance. APPLICATIONS FREDFETS. Power FREDFETs should specified under following conditions: Whenever intrinsic body drain diode MOSFET expected carry forward current. soft switched circuits, where body diode carries current.
BVDSS Volts
RDS(ON) Ohms 9.000 9.000 9.000 9.000
ID(Cont) Amps
MOSFET
FREDFET (low MOSFET) APT809RKVFR APT609RKVFR APT809RK3VFR APT609RK3VFR
Package Style
APT809RKVR APT609RKVR APT809RK3VR APT609RK3VR
TO-220[K]
TO-220 ISOLATED [K3]
1200 1000
1.600 1.500 1.000 0.860 0.750 0.650 0.560 0.400 0.350 0.300 0.250 0.280 0.240 0.200 0.170 0.150
APT1201R6BVR APT1201R5BVR APT1001RBVR APT10086BVR APT8075BVR APT8065BVR APT8056BVR APT6040BVR APT6035BVR APT6030BVR APT6025BVR APT5028BVR APT5024BVR APT5020BVR APT5017BVR APT5015BVR
-APT1001RBVFR APT10086BVFR APT8075BVFR APT8065BVFR APT8056BVFR APT6045BVFR APT6035BVFR APT6030BVFR APT6025BVFR APT5028BVFR APT5024BVFR APT5020BVFR APT5017BVFR APT5015BVFR
TO-247[B]
PAK[S] TO-268
Part Numbers packages replace with part number
Power MOSFETs FREDFETs
BVDSS Volts RDS(ON) Ohms 0.200 0.160 0.140 0.120 0.085 0.070 0.045 0.040 0.038 0.025 0.019 0.800 0.600 0.500 0.400 0.300 0.240 0.200 0.150 0.110 0.140 0.100 0.085 0.080 0.070 0.040 0.022 0.018 0.011 0.009 0.450 0.300 0.180 0.080 0.060 0.500 0.800 0.400 0.500 0.430 0.250 0.300 0.280 0.150 0.150 0.130 0.075 0.100 0.085 0.060 0.050 ID(Cont) Amps MOSFET FREDFET (low MOSFET) APT4020BVFR APT4016BVFR APT4014BVFR APT4012BVFR APT30M85BVFR APT30M70BVFR APT20M45BVFR APT20M40BVFR APT20M38BVFR APT10M25BVFR APT10M19BVFR APT12080B2VFR APT12060B2VFR APT10050B2VFR APT10040B2VFR APT8030B2VFR APT8024B2VFR APT6020B2VFR APT6015B2VFR APT6011B2VFR APT5014B2VFR APT5010B2VFR APT50M85B2VFR APT50M80B2VFR APT40M70B2VFR APT30M40B2VFR APT20M22B2VFR APT20M18B2VFR APT10M11B2VFR APT10M11B2VFR APT12045L2VFR APT10030L2VFR APT8018L2VFR APT60M80L2VFR APT50M60L2VFR APT14050JVFR APT12080JVFR APT12040JVFR APT10050JVFR APT10043JVFR APT10025JVFR APT8030JVFR APT8028JVFR APT8015JVFR APT6015JVFR APT6013JVFR APT60M75JVFR APT5010JVFR APT50M85JVFR APT50M60JVFR APT50M50JVFR ISOTOP®[J] SOT-227 (ISOLATED BASE)
NEW!
Package Style
APT4020BVR APT4016BVR APT4014BVR APT4012BVR APT30M85BVR APT30M70BVR APT20M45BVR APT20M40BVR APT20M38BVR APT10M25BVR APT10M19BVR APT12080B2VR APT12060B2VR APT10050B2VR APT10040B2VR APT8030B2VR APT8024B2VR APT6020B2VR APT6015B2VR APT6011B2VR APT5014B2VR APT5010B2VR APT50M85B2VR APT50M80B2VR APT40M70B2VR APT30M40B2VR APT20M22B2VR APT20M18B2VR APT10M11B2VR APT10M09B2VR APT12045L2VR APT10030L2VR APT8018L2VR APT60M80L2VR APT50M60L2VR APT14050JVR APT12080JVR APT12040JVR APT10050JVR APT10043JVR APT10025JVR APT8030JVR APT8028JVR APT8015JVR APT6015JVR APT6013JVR APT60M75JVR APT5010JVR APT50M85JVR APT50M60JVR APT50M50JVR
TO-247[B]
PAK[S]
1200 1000
Part Numbers packages replace with part number
T-MAXTM[B2]
TO-264[L]
1200 1000 1400 1200 1000
Part Numbers TO-264 packages replace"B2" with part number
264-MAX TM[L2]
Power MOSFETs FREDFETs
BVDSS Volts RDS(ON) Ohms 0.070 0.035 0.040 0.019 0.022 0.019 0.011 0.011 0.007 ID(Cont) Amps MOSFET FREDFET (low MOSFET) APT40M70JVFR APT40M35JVFR APT30M40JVFR APT30M19JVFR APT20M22JVFR APT20M19JVFR APT20M11JVFR APT10M11JVFR APT10M07JVFR ISOTOP®[J] SOT-227 (ISOLATED BASE) Package Style
APT40M70JVR APT40M35JVR APT30M40JVR APT30M19JVR APT20M22JVR APT20M19JVR APT20M11JVR APT10M11JVR APT10M07JVR
MOSFET/FRED ("Combi Products")
BVDSS Volts RDS(ON) Ohms 0.100 0.100 ID(Cont) Amps MOSFET APT5010JVRU2 APT5010JVRU3 CONFIGURATION
Boost (U2) Buck (U3)
NEW!
COOLMOSMOSFETs
Superjunction VDMOS SMPS Type
volt offering Latest technology Lowest specific on-resistance (highest current density) MOSFET Reduced system size, weight, overall cost Largest range packaging options High current options reduce need paralleling
CoolMOS
Your Benefit Conduction Losses Small Package No/Less Heatsink Lower Driving Requirements Lowest Switching Losses Controllable EMI-Noise
Lowest Area Specific RDS(on)
Ultra Gate Charge
Internal Gate Resistance
Compatible Gate Control
Compatible With Kinds Driving
Outstanding Power Handling Capability
"COOLMOS" comprise family transistors developed Infineon Technologies "COOLMOS" trademark Infineon Technologies
Less System Cost, LessVolume
NEW!
Cross Section Standard MOSFET
COOLMOSMOSFETs
Cross Section COOLMOS
Conduction State 96.5% RDS(ON) high voltage standard MOSFET determined epitaxial resistance
nepi
Conduction State Higher doped columns like "short" across drift region
nepi
n+sub
n+sub
Benchmark Area Specific Rds(on) Device Concept
Standard MOSFET RonxA V(BR)DSS2,4.2,6
COOLMOS- third latest generation COOLMOS offering:
RonxA [mm2]
HIGHER Pulse Current STANDARD Threshold-Voltage HIGHER Transconductance LOWER Plateau-Voltage!!!
CoolMOS
1000
horizons high voltage applications
V(BR)DSS
"COOLMOS" comprise family transistors developed Infineon Technologies "COOLMOS" trademark Infineon Technologies
BVDSS Volts
RDS(ON) Ohms 0.450 0.190 0.450 0.290 0.190 0.095 0.070 0.290 0.190 0.095 0.070 0.145 0.145 0.145 0.035
ID(Cont) Amps
MOSFET APT11N80KCS APT20N60KC3 APT11N80BC3 APT17N80BC3 APT20N60BC3 APT40N60BC3 APT47N60BC3 APT17N80SC3 APT20N60SC3 APT40N60SC3 APT47N60SC3 APT34N80B2C3 APT34N80LC3 APT31N80JC3 APT77N60JC3
Package Style TO-220
TO-220[K] PAK[S] TO-268
TO-247
TO-247[B]
T-MAXTM[B2]
T-MAXTO-264 ISOTOP®
ISOTOP®[J] SOT-227 (ISOLATED BASE)
TO-264[L]
Fast Recovery Epitaxial Diodes (FREDs)
Figure
Figure below shows typical tradeoff between reverse recovery switching times (trr) forward voltage drop (VF) FRED lower switching times (faster switching speeds) result higher forward voltage drop. specific process design define curve. critical part manufacturing process lifetime control lower material lifetime lower switching times (move left curve). lifetime control technique proprietary platinum diffusion process more platinum faster switching times. reverse recovery times directly related reverse recovery charge. offers three families "series" high performance FRED products which represented specific points trade curve Figure
Current
Time (ns)
Figure
Forward Voltage Drop
Figure shows relative comparison reverse recovery waveforms each "series" products. proprietary platinum lifetime control process results performance advantages compared FREDs built with alternative processes lifetime control:
High Temperature Capability less degradation performance high temperatures allowing increased maximum junction temperature safe operation. Junction temperature maximum without concern excessively high Leakage currents thermal runaway. Softer Recovery minimize
Switching Time {reverse recovery charge}
Very Fast switching times (trr) along with extremely reverse recovery current (IRRM) reverse recovery charge (Qrr) given forward voltage (VF).
"DS" series FREDs currently offered discrete products. "DF" series FREDs only offered Power IGBT combis. Table below provides relative metrics "series" products.
Relative Metrics 600V Pricing
Target Applications
"DS" Series Die)
High Perf High freq where conduction losses important
"DF" Series 1.2X IGBT Combi
Series
Range Perf
Table
Series FREDs
Volts 1200 1000 Amps (volts) 25OC trr(ns) 25OC Part Number APT30D120B APT60D120B APT30D100B APT60D100B APT15D60B APT30D60B APT60D60B APT30D40B APT60D40B APT60D30B APT30D20B APT60D20B APT15D120K APT15D100K APT15D60K APT15D40K APT15D30K APT2X30D120J APT2X60D120J APT2X100D120J APT2X30D100J APT2X60D100J APT2X100D100J APT2X30D60J APT2X60D60J APT2X100D60J APT2X30D40J APT2X60D40J APT2X100D40J APT2X30D30J APT2X60D30J APT2X100D30J APT2X30D20J APT2X60D20J APT2X100D20J APT15D100BCT APT30D100BCT APT15D60BCT APT30D60BCT APT15D40BCT APT30D40BCT APT15D30BCT APT30D30BCT APT15D20BCT APT30D20BCT
TO-247[BCT] *Common Cathode
ISOTOP®[J] SOT-227 Antiparallel Configuration (ISOLATED BASE)
Package Style
TO-247[B]
PAK[S] TO-268
1200 1000 1200
Part Numbers packages replace with part number
TO-220[K]
1000
Part Numbers Parallel Configuration replace with 101. Example: 2X30D120J becomes 2X31D120J
1000
Current rating common cathode configuration
Series FREDs
Volts 1000 1000 1000 Amps (volts) 25OC trr(ns) 25OC Part Number APT60D100LCT APT60D60LCT APT60D40LCT APT60D30LCT APT60D20LCT APT15D100BHB APT30D100BHB APT30D60BHB APT30D100BCA APT15D60BCA APT30D60BCA APT30D20BCA TO-247[BCA] Common Anode TO-247[BHB] Half Bridge TO-264[LCT] *Common Cathode Package Style
"DS" Series FREDs
Volts Amps (volts) 25OC trr(ns) 25OC 12.5
300V FREDs Series
Part Number APT30DS60B APT15DS60B Package Style TO-247
Schottky Diodes
These Schottky Diodes offer several dramatic improvements over currently used Fast Recovery Epitaxial Diodes (FREDs):
lower forward voltage drop (VF) minimize conduction loss enabling higher power conversion efficiencies. softer reverse recovery characteristics resulting reduced avalanche energy rated (EAS) offering improved reliability.
Power supply designers these schottky diodes improve cost, power density, efficiency their designs. Designs with these schottky diodes experience 10-15% lower losses than FRED's with same voltage ratings. These cost effective Schottky Diodes replace FRED's output rectifiers high power volt telecom rectifiers DC-DC converters free wheeling anti-parallel diodes voltage converters.
Amps
(volts) 25OC "200V" 0.80 0.80 0.83 0.80 0.89 0.83 0.82 0.80 0.80 0.83 0.89 0.89 0.83 0.80
trr(ns) 25OC "200V"
Part Number APT15S20K APT15S20KCT APT60S20S APT30S20S APT100S20B APT60S20B APT30S20B APT30S20BCT APT15S20BCT APT60S20B2CT APT100S20LCT APT2X101S20J APT2X61S20J APT2X31S20J
Configuration
Package Style TO-220
*common cathode
TO-247
*common cathode *common cathode *common cathode *common cathode
T-MAXTO-264
ISOTOP®
Current rating common cathode configuration
Linear MOSFETs
What Linear MOSFET? MOSFET specifically designed more robust than standard MOSFET when operated with both high voltage high current near conditions (>100msecs). Problem with SMPS MOSFETs MOSFETs optimized high frequency SMPS applications have poor high voltage SOA. Most SMPS type MOSFETs overstate capability high voltage data sheets. Above ~30V conditions, drops faster than indicated limited operation. pulsed loads (t<10ms) there generally problem using standard MOSFET. Technology Innovation Introduced 1999, modified proprietary patented selfaligned metal gate MOSFET technology enhanced performance high voltage, linear applications. These Linear MOSFETs typically provide 1.5-2.0 times capability high voltage compared other MOSFET technologies optimized switching applications. Designers will need Linear MOSFETs when. High Current 200V >100msec Used variable power resistor Soft start application (limit surge currents) Linear amplifier circuit Typical Applications. Active loads above volts such dynamic loads testing power supplies, batteries, fuel cells, etc. High voltage, high current constant current sources.
BVDSS Volts 1000
RDS(ON) Ohms 0.125 0.090 0.600 0.125 0.090
ID(Cont) Amps
Watts
Part Number APL602B2 APL502B APL1001J APL602J APL502J
Package Style
T-MAXTM[B2]
TO-264[L]
ISOTOP®[J] SOT-227 (ISOLATED BASE)
Part Numbers TO-264 packages replace "B2" with part number
Custom Products
addition broad line leading edge products this catalog, dedicated providing innovative solutions customers. This means working with customers solve their procurement, manufacturing application problems. known supplier that provides solutions that others cannot, will not, provide. These include, limited Custom silicon packaging Supply chain management requirements Strategic inventories allow unexpected changes demand Special testing Thermal power management Hi-Rel Testing/Screening
Hermetic Hi-Rel
Advanced Power Technology manufactures broad range discrete power semiconductors industrial, military, space applications. focus high voltage, high power, high performance segment this market. APT's technology leadership allows offer latest high performance power MOSFETs, FREDFETs, IGBTs, Diodes. ISO9001 registered, MIL-PRF-19500 certified offer TXV, Space Level processing, Custom testing screening well Plastic Up-Screening. Contact your local representative directly copy current Hermetic Hi-Rel Power Semiconductor Product Catalog.
Products
Advanced Power Technology's products available form. information requested from website www.advancedpower.com contact directly copy current Product Catalog.
Package Outline Drawings
Revised 4/18/95
Revised 8/29/97
ISOTOP® registered trademark Thomson
Notes
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MARCH
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reserves right change without notice,the specifications information contained herin.
Asia Pacific Tel: +886-922-222-205 E-Mail: rsmasia@advancedpower.com

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