AOU413 uses advanced trench technology provide excellent RDS(ON), gate
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AOU413 P-Channel Enhancement Mode Field Effect Transistor
AOU413 uses advanced trench technology provide excellent RDS(ON), gate charge gate resistance. With excellent thermal resistance DPAK package, this device well suited high current load applications. Standard Product AOU413 Pb-free (meets ROHS Sony specifications). AOU413L Green Product ordering option. AOU413 AOU413L electrically identical.
TO-251
Features
-40V -12A (VGS -10V) RDS(ON) (VGS -10V) RDS(ON) (VGS -4.5V)
View Drain Connected
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current Repetitive avalanche energy L=0.1mH TC=25°C Power Dissipation TC=100°C Junction Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Case Steady-State Steady-State
Maximum
Units
TA=25°C
TA=100°C
TSTG
Symbol
Units °C/W °C/W
Alpha Omega Semiconductor, Ltd.
AOU413
Electrical Characteristics J=25°C unless otherwise noted) Symbol Parameter Conditions ID=-250µA, VGS=0V VDS=-32V, VGS=0V TJ=55°C VDS=0V, VGS=±20V VDS=VGS ID=-250µA VGS=-10V, VDS=-5V VGS=-10V, ID=-12A RDS(ON) Static Drain-Source On-Resistance VGS=-4.5V, D=-8A Forward Transconductance VDS=-5V, ID=-12A Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current TJ=125°C -0.75 VGS=0V, VDS=-20V, f=1MHz VGS=0V, VDS=0V, f=1MHz 14.1 VGS=-10V, VDS=-20V, ID=-12A VGS=-10V, VDS=-20V, RL=1.7, RGEN=3 IF=-12A, dI/dt=100A/µs 12.2 12.5 23.2 18.2 -1.9 ±100 Units
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage state drain current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg(10V) Total Gate Charge (10V) Qg(4.5V) Total Gate Charge (4.5V) tD(on) tD(off) Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=-12A, dI/dt=100A/µs
value measured with device still environment with =25°C. power dissipation based TJ(MAX)=175°C, using junction-to-case thermal resistance, more useful setting upper dissipation limit cases where additional heatsinking used. Repetitive rating, pulse width limited junction temperature TJ(MAX)=175°C. thermal impedence from junction case case ambient. static characteristics Figures obtained using <300 pulses, duty cycle 0.5% max. These curves based junction-to-case thermal impedence which measured with device mounted large heatsink, assuming maximum junction temperature TJ(MAX)=175°C. maximum current rating limited bond-wires. 2005
THIS PRODUCT BEEN DESIGNED QUALIFIED CONSUMER MARKET. APPLICATIONS USES CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS AUTHORIZED. DOES ASSUME LIABILITY ARISING SUCH APPLICATIONS USES PRODUCTS. RESERVES RIGHT IMPROVE PRODUCT DESIGN, FUNCTIONS RELIABILITY WITHOUT NOTICE.
Alpha Omega Semiconductor, Ltd.
AOU413
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
-10V -3.5V VGS=-3V -VDS (Volts) On-Region Characteristics Normalized On-Resistance RDS(ON) Figure On-Resistance Drain Current Gate Voltage RDS(ON) -VGS (Volts) Figure On-Resistance Gate-Source Voltage 25°C 1.0E-04 25°C 1.0E-05 1.0E-06 -VSD (Volts) Figure Body-Diode Characteristics 125°C 1.0E-02 1.0E-03 ID=-12A 1.0E-01 1.0E+01 1.0E+00 VGS=-10V VGS=-4.5V 1.80 1.60 1.40 1.20 1.00 0.80 Temperature (°C) Figure On-Resistance Junction Temperature VGS=-10V ID=-12A 25°C -VGS(Volts) Figure Transfer Characteristics -ID(A) -4.5V VDS=-5V
125°C
VGS=-4.5V ID=-8A
125°C
Alpha Omega Semiconductor, Ltd.
AOU413
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
VDS=-15V ID=-12A Capacitance (pF) 1000
-VGS (Volts)
Ciss
Coss Crss
-VDS (Volts) Figure Capacitance Characteristics
(nC) Figure Gate-Charge Characteristics 100.0 TJ(Max)=175°C, TA=25°C RDS(ON) limited 10µs Power -VDS (Volts) Figure Maximum Forward Biased Safe Operating Area (Note 100µs 10ms
TJ(Max)=175°C TA=25°C
(Amps)
10.0
0.0001
0.001
0.01
Pulse Width Figure Single Pulse Power Rating Junction-toCase (Note
Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJC.RJC RJC=3°C/W descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Single Pulse 0.01 0.00001
0.0001
0.001
0.01
1000
Pulse Width Figure Normalized Maximum Transient Thermal Impedance (Note
Alpha Omega Semiconductor, Ltd.
AOU413
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
-ID(A), Peak Avalanche Current
Power Dissipation
TA=25°C
0.00001
0.0001
0.001
Time avalanche, Figure Single Pulse Avalanche capability
TCASE (°C) Figure Power De-rating (Note
Current rating -ID(A) TCASE (°C) Figure Current De-rating (Note
Alpha Omega Semiconductor, Ltd.
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