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AOU412 N-Channel Enhancement Mode Field Effect Transistor

TO-251 D Top View Drain Connected to Tab

AOU412 N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOU412 uses advanced trench technology to provide excellent RDS(ON), low gate chargeand low gate resistance. This device is ideally suited for use as a high side switch in CPU core power conversion. Standard Product AOU412 is Pb-free (meets ROHS & Sony 259 specifications). AOU412L is a Green Product ordering option. AOU412 and AOU412L are electrically identical.
TO-251 D Top View Drain Connected to Tab
Features
ID IDM IAR EAR PD TJ, TSTG
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Lead C
Steady-State Steady-State
Symbol RJA RJL
Typ 105 1
Max 125 1.5
Alpha & Omega Semiconductor, Ltd.
AOU412
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time
Alpha & Omega Semiconductor, Ltd.
AOU412
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1.0E+02 1.0E+01 125°C
1.0E+00 1.0E-01 25°C 1.0E-02 1.0E-03 1.0E-04 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd.
AOU412
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100 ID (Amps)
0.1 0.1 1 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 100
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F)
10 ZJC Normalized Transient Thermal Resistance
PD Ton Single Pulse
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
AOU412
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
Time in avalanche, t A (s) Figure 12: Single Pulse Avalanche capability
100 80 Current rating ID(A) 60 40 20 0 0 25 50 75 100 125 150 175 TCASE (°C) Figure 14: Current De-rating (Note B)
Alpha & Omega Semiconductor, Ltd.