AOU412 uses advanced trench technology provide excellent RDS(ON), gate

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AOU412 uses advanced trench technology provide excellent RDS(ON), gate

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AOU412 N-Channel Enhancement Mode Field Effect Transistor
AOU412 uses advanced trench technology provide excellent RDS(ON), gate chargeand gate resistance. This device ideally suited high side switch core power conversion. Standard Product AOU412 Pb-free (meets ROHS Sony specifications). AOU412L Green Product ordering option. AOU412 AOU412L electrically identical.
TO-251 View Drain Connected
Features
(VGS 10V) RDS(ON) 7.5m (VGS 10V) RDS(ON) (VGS 4.5V)
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current Repetitive avalanche energy L=0.1mH TC=25°C Power Dissipation
Maximum
Units
TC=25°C
TC=100°C
TSTG
TC=100°C
Junction Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Lead
Steady-State Steady-State
Symbol
Units °C/W °C/W
Alpha Omega Semiconductor, Ltd.
AOU412
Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage state drain current Static Drain-Source On-Resistance VGS=4.5V, ID=20A Forward Transconductance VDS=5V, ID=20A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current Conditions ID=250µA, VGS=0V VDS=24V, VGS=0V TJ=55°C VDS=0V, VGS= ±20V VDS=VGS ID=250µA VGS=10V, VDS=5V VGS=10V, ID=20A TJ=125°C 0.72 1600 2.15 0.005 Units
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Gate Source Charge tD(on) tD(off) Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time
VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz
1320 0.95
16.2
VGS=4.5V, VDS=15V, ID=20A
13.3 12.5 29.7
VGS=10V, VDS=15V, RL=0.75, RGEN=3
IF=20A, dI/dt=100A/µs Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs
value measured with device still environment with =25°C. power dissipation based TJ(MAX)=175°C, using junction-to-case thermal resistance, more useful setting upper dissipation limit cases where additional heatsinking used. Repetitive rating, pulse width limited junction temperature J(MAX)=175°C. thermal impedence from junction case case ambient. static characteristics Figures obtained using <300 pulses, duty cycle 0.5% max. These curves based junction-to-case thermal impedence which measured with device mounted large heatsink, assuming maximum junction temperature TJ(MAX)=175°C. maximum current rating limited bond-wires. Rev3: August 2005 THIS PRODUCT BEEN DESIGNED QUALIFIED CONSUMER MARKET. APPLICATIONS USES CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS AUTHORIZED. DOES ASSUME LIABILITY ARISING SUCH APPLICATIONS USES PRODUCTS. RESERVES RIGHT IMPROVE PRODUCT DESIGN, FUNCTIONS RELIABILITY WITHOUT NOTICE
Alpha Omega Semiconductor, Ltd.
AOU412
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
3.5V (Volts) On-Region Characteristics Normalized On-Resistance RDS(ON) VGS=4.5V Figure On-Resistance Drain Current Gate Voltage VGS=10V VGS=4.5V Temperature (°C) Figure On-Resistance Junction Temperature ID=20A VGS=10V ID(A) 4.0V 125°C 25°C VGS(Volts) Figure Transfer Characteristics VDS=5V
VGS=3V
1.0E+02 1.0E+01 125°C
ID=20A RDS(ON) 125°C 25°C (Volts) Figure On-Resistance Gate-Source Voltage
1.0E+00 1.0E-01 25°C 1.0E-02 1.0E-03 1.0E-04 1.0E-05 (Volts) Figure Body-Diode Characteristics
Alpha Omega Semiconductor, Ltd.
AOU412
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
(Volts) (nC) Figure Gate-Charge Characteristics VDS=15V ID=20A Capacitance (pF) 2400 2000 1600 1200 Coss (Volts) Figure Capacitance Characteristics Crss
Ciss
1000 RDS(ON) limited 10ms TJ(Max)=175°C TA=25°C 100µs Power 10µs
1000 1E-05 1E-04 0.001 0.01 TJ(Max)=175°C TA=25°C
(Amps)
(Volts) Figure Maximum Forward Biased Safe Operating Area (Note
Pulse Width Figure Single Pulse Power Rating Junction-toAmbient (Note
Normalized Transient Thermal Resistance
D=Ton/T TJ,PK=TA+PDM.ZJC.RJA RJC=1.5°C/W
descending order D=0.5, 0.3, 0.1, 0.05, 0.02, single pulse
Single Pulse
0.01 0.00001
0.0001
0.001
0.01
Pulse Width Figure Normalized Maximum Transient Thermal Impedance (Note
Alpha Omega Semiconductor, Ltd.
AOU412
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
ID(A), Peak Avalanche Current TA=25°C Power Dissipation 0.001 0.01 0.00001 0.0001 TCASE (°C) Figure Power De-rating (Note
Time avalanche, Figure Single Pulse Avalanche capability
Current rating ID(A) TCASE (°C) Figure Current De-rating (Note
Alpha Omega Semiconductor, Ltd.

AOU412 uses advanced trench technology provide excellent RDS(ON), gate

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