AOU408 uses advanced trench technology design provide excellent RDS(ON
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AOU408 N-Channel Enhancement Mode Field Effect Transistor
AOU408 uses advanced trench technology design provide excellent RDS(ON) with gate charge. This device suitable high voltage synchronous rectification load switching general purpose applications. Standard Product AOU408 Pbfree (meets ROHS Sony specifications). AOU408L Green Product ordering option. AOU408 AOU408L electrically identical.
105V (VGS =10V) RDS(ON) (VGS =10V) RDS(ON) (VGS
TO-251
View Drain Connected
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current
Maximum
Units
TC=25°C TC=100°C TSTG TC=25°C
Repetitive avalanche energy L=0.1mH Power Dissipation TC=100°C
Junction Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Case
Steady-State Steady-State
Symbol
Units °C/W °C/W
Alpha Omega Semiconductor, Ltd.
AOU408
Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions ID=10mA, VGS=0V VDS=84V, VGS=0V TJ=55°C VDS=0V, VGS=±25V VDS=VGS, ID=250µA VGS=10V, VDS=5V VGS=10V, ID=20A RDS(ON) Static Drain-Source On-Resistance VGS=6V, ID=20A Forward Transconductance VDS=5V, ID=20A Diode Forward Voltage IS=1A, VGS=0V Maximum Body-Diode Continuous Current TJ=125°C 21.5 0.73 2038 VGS=0V, VDS=25V, f=1MHz VGS=0V, VDS=0V, f=1MHz 38.5 VGS=10V, VDS=50V, ID=20A 12.7 VGS=10V, VDS=50V, RL=2.7, RGEN=3 IF=20A, dI/dt=100A/µs 31.5 11.2 59.6 1.56 2445 Units
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage state drain current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg(10V) Total Gate Charge Gate Source Charge tD(on) tD(off) Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs
value measured with device still environment with =25°C. power dissipation based J(MAX)=175°C, using junction-to-case thermal resistance, more useful setting upper dissipation limit cases where additional heatsinking used. Repetitive rating, pulse width limited junction temperature J(MAX)=175°C. thermal impedence from junction case case ambient. static characteristics Figures obtained using <300 pulses, duty cycle 0.5% max. These curves based junction-to-case thermal impedence which measured with device mounted large heatsink, assuming maximum junction temperature J(MAX)=175°C. maximum current rating limited bond-wires. Rev2: August 2005 THIS PRODUCT BEEN DESIGNED QUALIFIED CONSUMER MARKET. APPLICATIONS USES CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS AUTHORIZED. DOES ASSUME LIABILITY ARISING SUCH APPLICATIONS USES PRODUCTS. RESERVES RIGHT IMPROVE PRODUCT DESIGN, FUNCTIONS RELIABILITY WITHOUT NOTICE
Alpha Omega Semiconductor, Ltd.
AOU408
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
ID(A) 125°C VGS=4.5V (Volts) On-Region Characteristics Normalized On-Resistance Figure On-Resistance Drain Current Gate Voltage ID=20A 1.0E+01 125°C RDS(ON) 1.0E+00 1.0E-01 25°C 1.0E-02 1.0E-03 25°C (Volts) Figure On-Resistance Gate-Source Voltage 1.0E-04 (Volts) Figure Body-Diode Characteristics 125°C Temperature (°C) Figure On-Resistance Junction Temperature VGS=6V,20A VGS=10V, 25°C
VDS=5V
VGS(Volts) Figure Transfer Characteristics
RDS(ON)
VGS=6V
VGS=10V
1.0E+02
Alpha Omega Semiconductor, Ltd.
AOU408
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
VDS=50V ID=20A Capacitance (nF)
(Volts)
Ciss
Coss Crss
(nC) Figure Gate-Charge Characteristics 1000 TJ(Max)=175°C, TA=25°C
(Volts) Figure Capacitance Characteristics
TJ(Max)=175°C TA=25°C
(Amps)
RDS(ON) limited
100µs 1ms,
Power
1000 (Volts) Figure Maximum Forward Biased Safe Operating Area (Note
0.0001
0.001
0.01
Pulse Width Figure Single Pulse Power Rating Junction-toCase (Note
Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJC.RJC RJC=1.5°C/W
descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Single Pulse
0.01 0.00001
0.0001
0.001
0.01
Pulse Width Figure Normalized Maximum Transient Thermal Impedance (Note
Alpha Omega Semiconductor, Ltd.
AOU408
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
ID(A), Peak Avalanche Current
Power Dissipation 0.001
TA=150°C
TA=25°C
0.000001
0.00001 0.0001 TCASE (°C) Figure Power De-rating (Note
Time avalanche, Figure Single Pulse Avalanche capability
Current rating ID(A)
TCASE (°C) Figure Current De-rating (Note
Alpha Omega Semiconductor, Ltd.
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