HU603AL N-Channel Logic Level Enhancement Mode Field Effect Trans

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HU603AL N-Channel Logic Level Enhancement Mode Field Effect Trans

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Spec. Preliminary Data Issued Date 1998.07.01 Revised Date 1999.08.01 Page
HU603AL
N-Channel Logic Level Enhancement Mode Field Effect Transistor
Description
This very high density process been especially tailored minimize onstate resistance provide superior switching performance. These devices particularly suited voltage applications such DC/DC converters other battery powered circuits where fast switching, inline power loss, resistance transients needed.
Absolute Maximum Ratings (Ta=25°C)
Maximum Temperatures Operating Storage Temperature +175 Maximum Power Dissipation Total Power Dissipation Tc=25°C Derate Above 25°C Maximum Voltages Currents Drain-Source Voltage Gate-Source Voltage -Continuous. Drain Current -Continuous Drain Current -Pulsed Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient. 62.5
Electrical Characteristics
Characteristics Symbol Parameter BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current +IGSS Gate-Body Leakage ,Forward -IGSS Gate-Body Leakage ,Reverse Characteristics VGS(TH) Gate Threshold Voltage VDS=VGS, ID=250uA VDS=VGS, ID=10mA VGS=10V, ID=25A VGS=4.5V, ID=10A VGS=10V, VDS=10V VGS=4.5V, VDS=10V VDS=10V, ID=25A 0.018 0.022 0.029 0.040 1100 Condition VGS=0V, ID=250uA VDS=30V, VGS=0V VGS=20V, VDS=0V VGS=-20V, VDS=0V Unit -100
RDS(on) Static Drain-Source On-Resistance IDS(on) On-State Drain Current Forward Transconductance
Dynamic Characteristic Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance
VDS=15V, VGS=0V f=1.0Mhz
HSMC Product Specification
Switching Characteristics Symbol Parameter Turn-On Delay Time T(on) Turn-On Rise Time Turn-Off Delay Time T(off) Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Condition VDS=15V, ID=25A VGS=10V, RGEN=24 VDS=10V, ID=25A, VGS=10V
Spec. Preliminary Data Issued Date 1998.07.01 Revised Date 1999.08.01 Page
Unit
Drain-Source Diode Characteristics Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS=0V, IS=25A
Characteristics Curve
On-Region Characteristic
VGS=10V VGS=
On-Resistance Variation With Gate Voltage Drain Current
Normalized Drain-Source OnResistance
Drain-Source Current
4.5V
4.5V
Drain-Source Voltage
Drain Current
Resistance Variation Temperature
On-Resistance Variation Drain Current Temperature
Normalized Drain-Source On-Resistance
ID=25A VGS=10V
Normalized Drain-Source OnResistance
VGS=10V TJ=125°C TJ=25°C
Junction Temperature (°C)
Drain Current
HSMC Product Specification
Spec. Preliminary Data Issued Date 1998.07.01 Revised Date 1999.08.01 Page
Drain Current Variation Gate Voltage Temperature
25°C TJ=125°C 0.05 0.06
Sub-Threshold Drain Current Variation Gate Voltage Temperature
TJ=125°C
TJ=25°C
Drain Current
Drain Current
0.04
0.03
0.02
0.01
Gate-Source Voltage
Gate-Source Voltage
Gate Threshold Variation Temperature
2000
Capacitance Characteristics
Gate-Source Threshold Voltage
1500
ID=1mA 250uA
Capacitance (pF)
ID=10mA Ciss 1000
Coss
Crss
Junction Temperature (°C)
Drain-Source Voltage
Breakdown Voltage Variation Temperature
Body Diode Forward Voltage Variation Current Temperature
Normalized Drain-Source Breakdown Voltage
1.08 TJ=125°C
Reverse Drain Current
1.06
25°C
1.04
1.02
0.98
Junction Temperature (°C)
Body Diode Forward Voltage
HSMC Product Specification
Spec. Preliminary Data Issued Date 1998.07.01 Revised Date 1999.08.01 Page
Transductance Variation Drain Current Temperature
TJ=25°C
Maximum Safe Operating Area
Drain-Source Current
TJ=125°C Rds(on) Line
Transconductance
10ms
100ms VGS=20V Single Pulse TC=25°C
Drain Current
Drain-Source Voltage
Trancient Thermal Response Curve
Normalized Effective Transient Thermal Resistance
0.05 0.02 0.01 Single Pulse 0.01 1000
RJC(t) r(t) RJC(t) =2.5
P(pk)
TJ-TC=P* RJC(t) Duty Cycle,D=t1/t2
Time (ms)
HSMC Product Specification
TO-263 Dimension
Marking
Spec. Preliminary Data Issued Date 1998.07.01 Revised Date 1999.08.01 Page
HSMC Logo Part Number Date Code
Product Series Rank
Style 1.Gate 2.Drain 3.Source
3-Lead TO-263 Plastic Surface Mounted Package HSMC Package Code *:Typical
Inches Min. Max. 0.3800 0.4050 0.3300 0.3700 0.0550 0.5750 0.6250 0.1600 0.1900 0.0450 0.0550 0.0900 0.1100 0.0180 0.0290
Millimeters Min. Max. 9.65 10.29 8.38 9.40 1.40 14.61 15.88 4.06 4.83 1.14 1.40 2.29 2.79 0.46 0.74
Inches Min. Max. 0.0500 0.0700 *0.1000 0.0450 0.0550 0.0200 0.0390
Millimeters Min. Max. 1.27 1.78 *2.54 1.14 1.40 0.51 0.99
Notes 1.Dimension tolerance based Spec. dated Jan. 09,1998.
2.Controlling dimension millimeters. 3.Maximum lead thickness includes lead finish thickness, minimum lead thickness minimum thickness base material. 4.If there question with packing specification packing method, please contact your local HSMC sales office.
Material
Lead Alloy solder plating Mold Compound Epoxy resin family, flammability solid burning class:UL94V-0
Important Notice:
rights reserved. Reproduction whole part prohibited without prior written approval HSMC. HSMC reserves right make changes products without notice. HSMC semiconductor products warranted suitable Life-Support Applications, systems. HSMC assumes liability consequence customer product design, infringement patents, application assistance.
Head Office Factory
Head Office (Hi-Sincerity Microelectronics Corp.) 10F.,No. Sec. Chung-Shan Taipei Taiwan R.O.C. 886-2-25212056 886-2-25632712, 25368454 Factory Kuang Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C 886-3-5983621~5 886-3-5982931 Factory 17-1, Ta-Tung Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C 886-3-5977061 886-3-5979220 HSMC Product Specification

HU603AL N-Channel Logic Level Enhancement Mode Field Effect Trans

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