AOU404 uses advanced trench technology design provide excellent RDS(ON

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AOU404 uses advanced trench technology design provide excellent RDS(ON

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AOU404 N-Channel Enhancement Mode Field Effect Transistor
AOU404 uses advanced trench technology design provide excellent RDS(ON) with gate charge. This device suitable PWM, load switching general purpose applications. Standard Product AOU404 Pb-free (meets ROHS Sony specifications). AOU404L Green Product ordering option. AOU404 AOU404L electrically identical.
TO-251 View Drain Connected
Features
(VGS 20V) RDS(ON) (VGS 20V) RDS(ON) (VGS 10V) RDS(ON) (VGS 4.5V)
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current
Maximum
Units
TC=25°C TC=100°C TSTG TC=25°C
Repetitive avalanche energy L=0.1mH Power Dissipation TC=100°C
Junction Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Case
Steady-State Steady-State
Symbol
Units °C/W °C/W
Alpha Omega Semiconductor, Ltd.
AOU404
Electrical Characteristics J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage state drain current Conditions ID=10mA, VGS=0V VDS=60V, VGS=0V TJ=55°C VDS=0V, VGS=±20V VDS=VGS, ID=250µA VGS=10V, VDS=5V VGS=20V, ID=5A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=10V, ID=5A VGS=4.5V, ID=2A Forward Transconductance VDS=5V, ID=10A IS=1A, VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current 0.79 VGS=0V, VDS=30V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=37.5V, ID=5A 2.46 1.34 VGS=10V, VDS=37.5V, RL=7.5, RGEN=3 IF=5A, dI/dt=100A/µs 14.7 Units
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge tD(on) tD(off) Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=5A, dI/dt=100A/µs
value measured with device still environment with =25°C. power dissipation based TJ(MAX)=175°C, using junction-to-case thermal resistance, more useful setting upper dissipation limit cases where additional heatsinking used. Repetitive rating, pulse width limited junction temperature TJ(MAX)=175°C. thermal impedence from junction case case ambient. static characteristics Figures obtained using <300 pulses, duty cycle 0.5% max. These curves based junction-to-case thermal impedence which measured with device mounted large heatsink, assuming maximum junction temperature TJ(MAX)=175°C. maximum current rating limited bond-wires. Rev2: August 2005 THIS PRODUCT BEEN DESIGNED QUALIFIED CONSUMER MARKET. APPLICATIONS USES CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS AUTHORIZED. DOES ASSUME LIABILITY ARISING SUCH APPLICATIONS USES PRODUCTS. RESERVES RIGHT IMPROVE PRODUCT DESIGN, FUNCTIONS RELIABILITY WITHOUT NOTICE.
Alpha Omega Semiconductor, Ltd.
AOU404
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
4.5V VGS=4V (Volts) On-Region Characteristics Normalized On-Resistance RDS(ON) Temperature (°C) Figure On-Resistance Junction Temperature 1.0E+01 ID=5A RDS(ON) 25°C (Volts) Figure On-Resistance Gate-Source Voltage 1.0E-04 1.0E-05 (Volts) Figure Body-Diode Characteristics 1.0E+00 1.0E-01 125°C 1.0E-02 1.0E-03 25°C Figure On-Resistance Drain Current Gate Voltage VGS=20V VGS=4.5V VGS=4.5V, VGS=20V, VGS=10V, ID(A) VDS=5V
125°C
25°C
VGS(Volts) Figure Transfer Characteristics
VGS=10V
125°C
Alpha Omega Semiconductor, Ltd.
AOU404
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
VDS=37.5V ID=5A Capacitance (pF) Coss (nC) Figure Gate-Charge Characteristics 100.0 TJ(Max)=175°C, TA=25°C 10µs (Volts) Figure Capacitance Characteristics Crss Ciss
(Volts)
Power
TJ(Max)=175°C TA=25°C
(Amps)
10.0 DS(ON) limited
100µs
0.0001
10ms
(Volts) Figure Maximum Forward Biased Safe Operating Area (Note Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TC+PDM.ZJC.RJC RJC=7.5°C/W
0.001
0.01
Pulse Width Figure Single Pulse Power Rating Junction-toCase (Note
descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Single Pulse
0.01 0.00001
0.0001
0.001
0.01
Pulse Width Figure Normalized Maximum Transient Thermal Impedance (Note
Alpha Omega Semiconductor, Ltd.
AOU404
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
ID(A), Peak Avalanche Current Power Dissipation 0.00001
TA=25°C
0.0001
0.001
Time avalanche, Figure Single Pulse Avalanche capability
TCASE (°C) Figure Power De-rating (Note
Current rating ID(A) TCASE (°C) Figure Current De-rating (Note
Alpha Omega Semiconductor, Ltd.

AOU404 uses advanced trench technology design provide excellent RDS(ON

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