HTL294MI EPITAXIAL PLANAR TRANSISTOR Description HTL294

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HTL294MI EPITAXIAL PLANAR TRANSISTOR Description HTL294

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Spec. Preliminary Data Issued Date 2000.12.21 Revised Date 2001.03.08 Page
HTL294MI
EPITAXIAL PLANAR TRANSISTOR
Description
HTL294MI designed high voltage power switching applications especially telephone telecommunication circuits.
Absolute Maximum Ratings
Maximum Temperatures Storage Temperature +150 Junction Temperature Maximum Maximum Power Dissipation Total Power Dissipation (Ta=25°C) Maximum Voltages Currents (Ta=25°C) VCBO Collector Base Voltage -400 VCEO Collector Emitter Voltage -400 VEBO Emitter Base Voltage Collector Current -400
Characteristics (Ta=25°C)
Symbol BVCBO BVCEO BVEBO ICBO ICES IEBO *VCE(sat)1 *VCE(sat)2 *VCE(sat)3 *VBE(sat) *hFE1 *hFE2 *hFE3 Min. -400 -400 Typ. Max. -0.2 -200 -300 -1.2 -750 Unit Test Conditions IC=-100uA, IE=0 IC=-1mA, IB=0 IE=10uA VCB=-400V, IE=0 VCE=-400V, IE=0 VEB=-6V, IC=0 IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA IC=-80mA, IB=-4mA IC=-10mA, IB=-1mA VCE=-10V, IC=-1mA VCE=-10V, IC=-20mA VCE=-10V, IC=-80mA VCE=-20V, IE=-10mA, f=1MHz VCB=-20V, f=1MHz, IE=0
*Pulse Test Pulse Width 380us, Duty Cycle2%
HTL294MI
HSMC Product Specification
Characteristics Curve
Current Gain Collector Current
1000 100000
Spec. Preliminary Data Issued Date 2000.12.21 Revised Date 2001.03.08 Page
Saturation Voltage Collector Current
VCE=10V
Saturation Voltage (mV)
10000
1000 VCE(sat) IC=20IB VCE(sat) IC=10IB
1000
1000
Collector Current-IC (mA)
Collector Current-IC (mA)
Saturation Voltage Collector Current
10000
Capacitance Reverse-Biased Voltage
Saturation Voltage (mV)
1000
Capacitance (pF)
1000
VBE(sat) IC=10IB
Collector Current-IC (mA)
Reverse Biased Voltage
Safe Operating Area
Power Derating
PT=1mS
PT=100mS
PD(W) Power Dissipation
1000
Collector Current-IC
PT=1S
0.01
Forward Biased Voltage-VCE
Ambient Temperature
HTL294MI
HSMC Product Specification
TO-251 Dimension
Marking
HSMC Logo
Spec. Preliminary Data Issued Date 2000.12.21 Revised Date 2001.03.08 Page
Part Number Date Code
Product Series
Mark
Style 1.Base 2.Collector 3.Emitter
3-Lead TO-251 Plastic Package HSMC Package Code *:Typical
Inches Min. Max. 0.0177 0.0217 0.0354 0.0591 0.0177 0.0236 0.0866 0.0945 0.2520 0.2677 0.2677 0.2835
Millimeters Min. Max. 0.45 0.55 0.90 1.50 0.45 0.60 2.20 2.40 6.40 6.80 6.80 7.20
Inches Min. Max. 0.2559 *0.1811 0.0354 0.0315 0.2047 0.2165
Millimeters Min. Max. 6.50 *4.60 0.90 0.80 5.20 5.50
Notes 1.Dimension tolerance based Spec. dated May. 24,1995.
2.Controlling dimension millimeters. 3.Maximum lead thickness includes lead finish thickness, minimum lead thickness minimum thickness base material. 4.If there question with packing specification packing method, please contact your local HSMC sales office.
Material
Lead Alloy solder plating Mold Compound Epoxy resin family, flammability solid burning class:UL94V-0
Important Notice:
rights reserved. Reproduction whole part prohibited without prior written approval HSMC. HSMC reserves right make changes products without notice. HSMC semiconductor products warranted suitable Life-Support Applications, systems. HSMC assumes liability consequence customer product design, infringement patents, application assistance.
Head Office Factory
Head Office (Hi-Sincerity Microelectronics Corp.) 10F.,No. Sec. Chung-Shan Taipei Taiwan R.O.C. 886-2-25212056 886-2-25632712, 25368454 Factory Kuang Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C 886-3-5983621~5 886-3-5982931
HTL294MI
HSMC Product Specification

HTL294MI EPITAXIAL PLANAR TRANSISTOR Description HTL294

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