HTL294D EPITAXIAL PLANAR TRANSISTOR Description HTL294D

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HTL294D EPITAXIAL PLANAR TRANSISTOR Description HTL294D

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Spec. Preliminary Data Issued Date 2001.03.01 Revised Date 2001.03.29 Page
HTL294D
EPITAXIAL PLANAR TRANSISTOR
Description
HTL294D designed application that requires high voltage.
Features
High Breakdown Voltage: 400(Min.) IC=1mA High Current: IC=300mA 25°C
Absolute Maximum Ratings
Maximum Temperatures Storage Temperature +150 Junction Temperature +150 Maximum Maximum Power Dissipation Total Power Dissipation (Ta=25°C) Maximum Voltages Currents (Ta=25°C) VCBO Collector Base Voltage -400 VCEO Collector Emitter Voltage -400 VEBO Emitter Base Voltage Collector Current -250
Characteristics (Ta=25°C)
Symbol BVCBO BVCEO BVEBO ICBO ICES IEBO *VCE(sat)1 *VCE(sat)2 *VBE(sat) *hFE1 *hFE2 *hFE3 Min. -400 -400 Typ. Max. -0.2 -300 -500 -750 Unit Test Conditions IC=-100uA, IE=0 IC=-1mA, IB=0 IE=-10uA, IC=0 VCB=-400V, IE=0 VCE=-400V, IC=0 VEB=-6V, VBE=0 IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA IC=-10mA, IB=-1mA VCE=-10V, IC=-1mA VCE=-10V, IC=-20mA VCE=-10V, IC=-80mA VCE=-20V, IE=-10mA, f=1MHz VCB=-20V, f=1MHz, IE=0
*Pulse Test Pulse Width 380us, Duty Cycle2%
HTL294D
HSMC Product Specification
Characteristics Curve
Current Gain Collector Current
1000 10000
Spec. Preliminary Data Issued Date 2001.03.01 Revised Date 2001.03.29 Page
Sasturation Voltage Collector Current
Saturation Voltage (mV)
1000 VCE(sat) IC=20IB
VCE=10V
VCE(sat) IC=10IB
1000
1000
Collector Current-IC (mA)
Collector Current-IC (mA)
Saturation Voltage Collector Current
1000
Capacitance Reverse-Biased Voltage
VBE(sat) IC=10IB
Saturation Voltage (mV)
Capacitance (pF)
1000
Collector Current-IC (mA)
Reverse Biased Voltage
Safe Operating Area
Power Derating
PT=1mS
PD(W) Power Dissipation
Collector Current-IC
PT=100mS PT=1S
0.01 1000
Forward Biased Voltage-VCE
Ambient Temperature
HTL294D
HSMC Product Specification
TO-126ML Dimension
Marking
Spec. Preliminary Data Issued Date 2001.03.01 Revised Date 2001.03.29 Page
HSMC Logo Part Number Date Code
Product Series Rank
Marking
Style 1.Emitter 2.Collector 3.Base
3-Lead TO-126ML Plastic Package HSMC Package Code *:Typical
Inches Min. Max. 0.1356 0.1457 0.0170 0.0272 0.0344 0.0444 0.0501 0.0601 0.1131 0.1231 0.0737 0.0837 0.0294 0.0494 0.0462 0.0562
Millimeters Min. Max. 3.44 3.70 0.43 0.69 0.87 1.12 1.27 1.52 2.87 3.12 1.87 2.12 0.74 1.25 1.17 1.42
Inches Min. Max. *0.1795 0.0268 0.0331 0.5512 0.5906 0.2903 0.3003 0.1378 0.1478 0.1525 0.1625 0.0740 0.0842
Millimeters Min. Max. *4.56 0.68 0.84 14.00 15.00 7.37 7.62 3.50 3.75 3.87 4.12 1.88 2.14
Notes 1.Dimension tolerance based Spec. dated Mar. 6,1995.
2.Controlling dimension millimeters. 3.Maximum lead thickness includes lead finish thickness, minimum lead thickness minimum thickness base material. 4.If there question with packing specification packing method, please contact your local HSMC sales office.
Material
Lead Alloy solder plating Mold Compound Epoxy resin family, flammability solid burning class:UL94V-0
Important Notice:
rights reserved. Reproduction whole part prohibited without prior written approval HSMC. HSMC reserves right make changes products without notice. HSMC semiconductor products warranted suitable Life-Support Applications, systems. HSMC assumes liability consequence customer product design, infringement patents, application assistance.
Head Office Factory
Head Office (Hi-Sincerity Microelectronics Corp.) 10F.,No. Sec. Chung-Shan Taipei Taiwan R.O.C. 886-2-25212056 886-2-25632712, 25368454 Factory Kuang Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C 886-3-5983621~5 886-3-5982931
HTL294D
HSMC Product Specification

HTL294D EPITAXIAL PLANAR TRANSISTOR Description HTL294D

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