AOU403 uses advanced trench technology design provide excellent RDS(ON
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AOU403 P-Channel Enhancement Mode Field Effect Transistor
AOU403 uses advanced trench technology design provide excellent RDS(ON) with gate charge. This device suitable PWM, load switching general purpose applications. Standard Product AOU403 Pb-free (meets ROHS Sony specifications). AOU403L Green Product ordering option. AOU403 AOU403L electrically identical.
TO-251
Features
-60V -12A (VGS -10V) RDS(ON) 115m (VGS -10V) RDS(ON) 150m (VGS -4.5V)
View Drain Connected
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current
Maximum
Units
TC=25°C TC=100°C TSTG TC=25°C
Repetitive avalanche energy L=0.1mH Power Dissipation TC=100°C
Junction Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Case
Steady-State Steady-State
Symbol
Units °C/W °C/W
Alpha Omega Semiconductor, Ltd.
AOU403
Electrical Characteristics J=25°C unless otherwise noted) Symbol Parameter Conditions ID=-250µA, VGS=0V VDS=-48V, VGS=0V TJ=55°C VDS=0V, VGS=±20V VDS=VGS ID=-250µA VGS=-10V, VDS=-5V VGS=-10V, ID=-12A RDS(ON) Static Drain-Source On-Resistance VGS=-4.5V, D=-8A Forward Transconductance VDS=-5V, ID=-12A Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current TJ=125°C -1.5 12.8 -0.76 VGS=0V, VDS=-30V, f=1MHz VGS=0V, VDS=0V, f=1MHz 15.8 VGS=-10V, VDS=-30V, ID=-12A VGS=-10V, VDS=-30V, RL=2.5, RGEN=3 IF=-12A, dI/dt=100A/µs 27.5 1185 -2.1 -0.003 ±100 Units
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage state drain current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg(10V) Total Gate Charge (10V) Qg(4.5V) Total Gate Charge (4.5V) tD(on) tD(off) Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=-12A, dI/dt=100A/µs
value measured with device still environment with =25°C. power dissipation based TJ(MAX)=175°C, using junction-to-case thermal resistance, more useful setting upper dissipation limit cases where additional heatsinking used. Repetitive rating, pulse width limited junction temperature TJ(MAX)=175°C. thermal impedence from junction case case ambient. static characteristics Figures obtained using <300 pulses, duty cycle 0.5% max. These curves based junction-to-case thermal impedence which measured with device mounted large heatsink, assuming maximum junction temperature TJ(MAX)=175°C. maximum current rating limited bond-wires. August 2005
THIS PRODUCT BEEN DESIGNED QUALIFIED CONSUMER MARKET. APPLICATIONS USES CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS AUTHORIZED. DOES ASSUME LIABILITY ARISING SUCH APPLICATIONS USES PRODUCTS. RESERVES RIGHT IMPROVE PRODUCT DESIGN, FUNCTIONS RELIABILITY WITHOUT NOTICE
Alpha Omega Semiconductor, Ltd.
AOU403
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
-10V -ID(A) -4.5V VGS=-4V -VDS (Volts) On-Region Characteristics RDS(ON) Figure On-Resistance Drain Current Gate Voltage VGS=-10V VGS=-4.5V Normalized On-Resistance Temperature (°C) Figure On-Resistance Junction Temperature VGS=-4.5V ID=-8A VGS=-10V ID=-12A -3.5V -VGS(Volts) Figure Transfer Characteristics 125°C 25°C VDS=-5V
ID=-12A 125°C RDS(ON)
1.0E+01 1.0E+00 1.0E-01 125°C 1.0E-02 1.0E-03 1.0E-04 1.0E-05 1.0E-06 25°C
25°C
-VGS (Volts) Figure On-Resistance Gate-Source Voltage
-VSD (Volts) Figure Body-Diode Characteristics
Alpha Omega Semiconductor, Ltd.
AOU403
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
VDS=-30V ID=-12A Capacitance (pF) 1200 Ciss -VGS (Volts) 1000 Coss (nC) Figure Gate-Charge Characteristics -VDS (Volts) Figure Capacitance Characteristics Crss
100.0 TJ(Max)=175°C, TA=25°C 10µs (Amps) 100µs Power 10.0 RDS(ON) limited
0.0001
TJ(Max)=175°C TA=25°C
10ms
-VDS (Volts) Figure Maximum Forward Biased Safe Operating Area (Note Normalized Transient Thermal Resistance
0.001
0.01
Pulse Width Figure Single Pulse Power Rating Junction-toCase (Note
D=Ton/T TJ,PK=TC+PDM.ZJC.RJC RJC=3°C/W
descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Single Pulse
0.01 0.00001
0.0001
0.001
0.01
Pulse Width Figure Normalized Maximum Transient Thermal Impedance (Note
Alpha Omega Semiconductor, Ltd.
AOU403
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
-ID(A), Peak Avalanche Current Power Dissipation
TA=25°C
0.00001
0.0001
0.001
Time avalanche, Figure Single Pulse Avalanche capability
CASE (°C) Figure Power De-rating (Note
Current rating -ID(A) CASE (°C) Figure Current De-rating (Note
Alpha Omega Semiconductor, Ltd.
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